KSM2303/SI2303 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -20V 125MΩ -1.4A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-23 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±8 V V Continuous Drain Current-1 -1.4 Continuous Drain Current-T=100℃ -1.1 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM2303/SI2303 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 140 RƟJA Thermal Resistance ,Junction to Ambient1 175 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM2303 KSM2303 SOT-23 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA — -0.8 -1.2 V VDS=10V,ID=6A — 0.12 0.46 VDS=2.5V,ID=5A — 0.23 — VDS=5V,ID=12A — 2.4 — — 260 — — 65 — — 35 — — 6 20 — 10 20 — 15 35 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 7 20 Qg Total Gate Charge — 4.5 10 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 0.9 — Gate-Drain “Miller” Charge ID=6A — 0.9 — ns ns ns ns nC nC nC — -0.8 -12 V — — — ns — — — nC td(on) Turn-On Delay Time tr Rise Time Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM2303/SI2303 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 3 KSM2303/SI2303 KERSMI ELECTRONIC CO.,LTD. -20V www.kersemi.com P-channel MOSFET 4 KSM2303/SI2303 KERSMI ELECTRONIC CO.,LTD. -20V www.kersemi.com P-channel MOSFET 5