Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G2 D G1 Top View Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 10 s P-Channel Steady State 10 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C)a,b TA = 25 °C TA = 70 °C 9.1 6.6 - 5.3 7.3 5.3 - 4.9 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipationa,b ID TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD V - 3.8 - 3.1 30 - 20 2.1 1.1 - 2.1 - 1.1 2.5 1.3 2.5 1.3 1.6 0.8 1.6 0.8 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF P-Channel Typ. Max. Typ. Max. 40 50 41 50 75 95 75 95 20 22 23 26 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4500BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V IGSS VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb IDSS N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch -5 VDS = 5 V, VGS = 4.5 V N-Ch 30 VDS = - 5 V, VGS = - 4.5 V P-Ch - 20 VGS = 4.5 V, ID = 9.1 A N-Ch 0.016 0.020 VGS = - 4.5 V, ID = - 5.3 A P-Ch 0.048 0.060 VGS = 2.5 V, ID = 3.3 A N-Ch 0.024 0.030 VGS = - 2.5 V, ID = - 1 A P-Ch 0.082 0.100 ID(on) RDS(on) gfs VSD V nA µA A VDS = 15 V, ID = 9.1 A N-Ch 29 VDS = - 15 V, ID = - 5.3 A P-Ch 11 IS = 2.1 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 2.1 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 11 17 P-Ch 6.0 9 N-Ch 2.5 P-Ch 1.3 Ω S V Dynamica Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 3.2 P-Ch 1.6 nC N-Ch 35 50 P-Ch 20 30 N-Ch 50 80 P-Ch 35 60 N-Ch 31 50 P-Ch 55 85 N-Ch 15 30 P-Ch 35 60 IF = 2.1 A, dI/dt = 100 A/µs N-Ch 30 60 IF = - 2.1 A, dI/dt = 100 A/µs P-Ch 25 50 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 V thru 3 V 2.5 V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 2V 10 20 15 10 TC = 125 °C 5 5 25 °C - 55 °C 1.5 V 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 1600 0.07 1400 0.06 1200 3.0 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0 0.0 0.05 0.04 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 1000 800 600 Coss 400 0.01 200 0.00 0 Crss 0 5 10 15 20 25 30 0 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VDS = 10 V ID = 9.1 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 3 2 VGS = 4.5 V ID = 9.1 A 1.2 1.0 0.8 1 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 30 ID = 9.1 A R DS(on) - On-Resistance (Ω) IS - Source Current (A) 0.07 TJ = 150 °C 10 TJ = 25 °C 0.06 0.05 ID = 3.3 A 0.04 0.03 0.02 0.01 0.00 0 0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 80 70 ID = 250 µA 0.2 0.0 50 Power (W) V GS(th) Variance (V) 60 - 0.2 40 30 20 - 0.4 10 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by R(DS)on* IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 5 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 3.5 V 3V TC = - 55 °C 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 2.5 V 8 25 °C 125 °C 12 8 2V 4 4 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 800 Ciss 600 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 700 0.16 0.12 0.08 VGS = 4.5 V 500 400 300 Coss 200 0.04 Crss 100 0.00 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 5.3 A VDS = 10 V ID = 5.3 A 1.4 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 3 2 1.2 1.0 0.8 1 0 0 www.vishay.com 6 1 2 3 4 5 6 7 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 20 R DS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 0.16 ID = 1 A 0.12 ID = 5.3 A 0.08 0.04 0.00 1 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 80 70 0.3 Power (W) V GS(th) Variance (V) 60 0.2 ID = 250 µA 0.1 0.0 50 40 30 20 - 0.1 10 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by R(DS)on* P(t) = 0.0001 ID - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 7 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 75 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72281. www.vishay.com 8 Document Number: 72281 S09-0705-Rev. D, 27-Apr-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000