Broad small-signal MOSFET portfolio to suit a wide range of applications

Small-signal MOSFET
Selection Guide
Broad selection of small-signal MOSFETs
for a wide range of applications
Our advanced MOSFET solutions deliver the flexibility and performance that today´s market
demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
of packages, from the larger SOT223 to the ultra small DFN1006B-3, the ultimate in miniaturization.
Key features
New leadless package innovation – DFN2020MD-6
} Voltage range: 12 to 300 V
NXP has developed a new 2 x 2 mm leadless package with the
} Package sizes: 1 x 0.6 to 5 x 6 mm
unique feature of 100% tin-plated, solderable side pads.
} RDSon as low as 10 mΩ
The concept is based on galvanic plating. These solderable
} Leadless packages with 100% solderable side pads
side pads enable visual inspection of solder joints, and allow
} ESD-protected devices up to 3 kV HBM
for tighter contact onto the PCB. The package saves cost in
production by eliminating the need for x-ray solder inspection.
Key applications
} Power management
} Charging circuits
NXP package
100% solderable side pads
Packages from
other suppliers
} Power switches (motors, fans, etc.)
} LED drivers
} LCD backlighting
Key benefits
} New AEC-Q101 qualified types
} New ultra-small leadless package DFN1006B-3
} New 2 x 2 mm leadless package with high Ptot capability
to replace significantly larger packages like SO8
100% solder wetting solution
with new 2 x 2 mm leadless package
DFN2020MD-6
} Optimal visual solder inspection
} High-quality solder connections
} No complete wetting on side pad
}Q
uality of solder connection difficult
to determine
}V
ery limited options for optical
solder inspection
Thermal capability comparison
Power dissipation per package based on different 4-layer PCB conditions
3000
PD [mW]
2500
PD on 1 cm2 solder land
2000
1500
1000
PD on standard footprint
500
Package
name
Footprint
size (mm)
SOT457
DFN2020-6
SOT1118
DFN2020MD-6/DFN2020-3
SOT1220/SOT1061
SOT89
2.9 x 2.8 x 1.1
2 x 2 x 0.6
2 x 2 x 0.6
4.5 x 4 x 1.5
For more information please visit our website:
http://www.nxp.com/campaigns/ultra-small-mosfets
http://www.nxp.com/news/news-archive/2012/DFN2020-with-solderable-side-pads.html
Small-signal MOSFETs in new DFN2020MD-6 (SOT1220) single package
DFN2020MD-6
(SOT1220)
Package
Size (mm)
2.0 x 2.0 x 0.65
P tot (mW)
>1500
Polarity
VDS
(V)
VGS
(V)
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Pch
Pch
Pch
Pch
Pch
Pch
Pch
Pch
Pch
20
20
20
20
20
30
30
30
30
30
30
60
12
20
20
20
20
20
30
30
30
8
8
12
12
12
12
12
12
12
20
20
16
12
12
12
12
12
12
12
20
20
ID
(A)
8.5
VGS(th) VGS(th)
min (V) max (V)
1.1
2.2
ton typ
(ns)
24
toff typ
(ns)
11
ESD
QG typ
protection
(nC)
(kV)
7.2
2
2
2
2
2
2
2
-
RDSon typ (mΩ) @ VGS =
10 V
4.5 V
16
12
20
10
15
23
16
13
29
33
11
20
40
15
19
33
20
29
43
47
27
48
2.5 V
1.8 V
PMPB12UN*
PMPB20UN*
PMPB10XNE*
PMPB15XN*
PMPB23XNE*
PMPB16XN*
PMPB13XNE*
PMPB29XNE*
PMPB33XN*
PMPB11EN*
PMPB20EN*
PMPB40SNA*
PMPB15XP*
PMPB19XP*
PMPB33XP*
PMPB20XPE*
PMPB29XPE*
PMPB43XPE*
PMPB47XP*
PMPB27XP*
PMPB48EP*
Small-signal MOSFET –­Schottky combination
DFN2020-6
(SOT1118)
Package
Size (mm)
2.0 x 2.0 x 0.65
P tot (mW)
>500
Configuration
Single + Schottky
VDS
(V)
VGS
(V)
20
8
ID
(A)
ESD
VGS(th) VGS(th) ton typ toff typ QG typ
protection
min (V) max (V)
(ns)
(ns)
(nC)
(kV)
IF
(A)
VR
(V)
VF typ.
(mA)
RDSon typ (mΩ) @ VGS =
4.5 V
2.5 V
1.8 V
3.3
0.5
1.5
15
92
4.5
1
2
30
455
58
72
100
3.3
0.5
1.5
15
92
4.5
1
2.2
30
325
58
72
100
PMFPB6545UP
3
1
2.2
30
325
80
PMFPB8045XP*
3
1
2.2
30
325
80
PMFPB8032XP*
PMFPB6532UP
* Products to be released in 2012
VDS max (V)
VGS max (V)
ID max (A)
VGSth min (V)
VGSth max (V)
RDSon max @
VGS = 4.5 V (mΩ)
RDSon max @
VGS = 2.5 V (mΩ)
DFN2020-6
(SOT1118)
Channel type
PMC85XP
Package
Type number
Small-signal MOSFET – NPN transistor combination
P-ch MOSFET
Channel type
NPN RET
30
VCEO max (V)
50
12
VEBO max (V)
10
3.4
Io max (A)
0.1
0.45
VI (off) typ (V)
0.6
1
VI (on) typ (V)
0.9
110
hFE typ
100
140
VCEsat max (V)
0.1
Features and benefits
`` Trench MOSFET technology
`` NPN transistor built-in bias resistors
`` Small and leadless ultra thin SMD plastic package:
2 x 2 x 0.65 mm
`` Exposed drain pad for excellent thermal conduction
Applications
`` Charging switch for portable devices
`` High-side load switch
`` USB port overvoltage protection
`` Power management in battery-driven portables
`` Hard disk and computing power management
A p-channel MOSFET as main switch combined
with a driver bipolar transistor including resistors,
in one package for use in e.g. VBUS protection
switches.
Scalable and flexible discrete solutions built on NXP's broad packaging and technology
portfolio.
VGSth max (V)
0.50
0.45
0.50
0.50
0.45
0.60
0.50
1.00
1.00
0.45
0.50
0.45
0.45
0.50
1.00
1.00
0.50
0.45
0.50
0.60
0.45
0.50
0.80
1.00
1.00
0.95
0.95
1.5
1.05
0.95
1.1
1.5
3
2.5
0.95
1.5
0.95
0.95
1.5
3
2.5
0.95
1
1.5
1.1
1
1.5
1.5
2.5
2.5
SOT666
1.6 x 1.2 x 0.55
NX3020NAKV*
30
20
yes
0.18
0.80
1.5
PMF280UN
PMF63UN
PMF290XN
NX3008NBKW
PMF400UN
PMF250XN
PMF370XN
PMF77XN
PMF87EN
NX3020NAKW*
BSH121
BSS138BKW
2N7002BKW
2N7002PW
BSS138PW
NX7002AKW
20
20
20
30
30
30
30
30
30
30
55
60
60
60
60
60
8
8
12
8
8
12
12
12
20
20
8
20
20
20
20
20
2
yes
1.5
2
yes
1.02
1.9
1
0.35
0.83
0.9
0.87
1.63
1.95
0.18
0.3
0.32
0.31
0.31
0.32
0.17
0.45
0.40
0.50
0.60
0.45
0.50
0.35
0.50
1.00
0.80
0.40
0.48
1.00
1.00
0.90
1.10
1
1
1.5
1.1
1
1.5
1.5
2.5
1.5
1.3
1.6
2.5
2.5
1.5
2.1
SOT323
2.0 x 1.25 x 0.95
PMG45UN
20
8
-
2.8
0.40
1
55
76
SOT363
2.0 x 1.25 x 0.95
PMGD280UN
20
8
-
0.87
0.45
1
340
PMG370XN
30
12
-
0.96
0.50
1.5
440
PMV65UN
PMV170UN*
BSH105
PMV16UN
PMV28UN
PMV185XN*
PMV30XN
NX3008NBK
BSH103
PMV20XN
PMV90EN
BSH108
NX3020NAK*
PMV22EN
PMV37EN
PMV45EN
BSN20
BSH111
BSS138BK
2N7002BK
2N7002P
BSS138P
NX7002AK
2N7002
BST82
BSH114
BSS123
PMV213SN
PMN25UN
PMN15UN
PMN34UN
PMN22XN
PMN25EN
PMN20EN
PMN35EN
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
50
55
60
60
60
60
60
60
100
100
100
100
20
30
30
30
30
30
30
8
8
8
8
8
12
12
8
8
12
20
20
20
20
20
20
20
10
20
20
20
20
20
30
20
20
20
30
8
8
8
12
20
20
20
2
yes
1.5
2
yes
-
2
1.4
1.05
5.8
3.3
1.3
3.2
0.4
0.85
4.8
2.1
1.9
0.2
5.2
3.1
5.4
0.173
0.335
0.36
0.35
0.36
0.36
0.19
0.3
0.19
0.85
0.15
1.9
6
8
4.9
5.7
6.2
6.7
5.1
0.40
0.40
0.40
0.40
0.40
0.50
0.50
0.60
0.40
0.50
1.00
1.00
0.80
1.00
1.00
1.00
0.40
0.40
0.48
1.00
1.00
0.90
1.10
1.00
1.00
2.00
1.00
2.00
0.40
0.40
0.45
0.50
1.00
1.00
1.00
1
1
1
1
1.5
1.5
1.1
1.5
2.5
2
1.5
2.5
2.5
2
1.8
1.3
1.6
2.5
2.5
1.5
2.1
2.5
4
2.8
4
1
1
1.5
2.5
2.5
2.5
76
188
200
18
32
220
35
1400
400
25
115
97
235
250
23
40
330
60
2100
500
35
SOT23
2.9 x 1.3 x 1.0
SOT457
2.9 x 1.5 x 1.0
SOT89
4.5 x 2.5 x 1.5
BSS87
200
20
-
0.4
0.80
2.8
* in development, release Q3/2012
4500
1600
1600
2000
2000
2000
4500
84
120
4500
22
36
42
15000
1600
1600
1600
1600
4500
5000
500
6000
250
23
20
31
3000
0.33
11
N
0.89
2.2
0.72
0.52
0.89
0.74
0.65
1.9
3.1
0.33
1
0.6
0.5
0.6
0.72
0.33
45
185
34
34
43
50
37
170
135
11
17
42
33
30
38
11
N
N
N
Y
N
N
N
N
N
N
N
Y
Y
Y
Y
N
2.2
184
N
430
0.89
45
N
650
0.65
37
N
2.5
185
3.9
7.4
5.8
152
670
470
4.9
0.52
2.1
6.4
2.6
6.4
0.33
8.6
6.5
9.4
1
0.6
0.5
0.6
0.72
0.33
4.6
7
6.4
9
9.9
6.4
9.6
12.4
6.2
420
34
83
585
132
190
11
480
330
350
17
17
42
33
30
38
11
31
25
138
23
330
470
845
790
585
492
630
334
N
N
N
N
N
N
N
Y
N
N
N
N
N
N
N
N
N
N
Y
Y
Y
Y
N
N
N
N
N
N
N
N
N
N
N
N
N
-
100
N
380
350
380
490
490
1400
460
1650
620
450
550
750
590
2100
680
1100
650
300
340
1000
460
420
1600
400
520
1100
560
650
380
340
350
1400
480
440
5200
620
430
550
2100
580
650
1300
760
2800
600
1400
1100
2800
5200
80
4500
1600
1600
1600
1600
4500
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
Y
Y
N
N
Y
N
N
N
Y
Y
RDSon max @
VGS = 1.8 V
(mΩ)
SOT416
1.6 x 0.8 x 0.77
900
1600
2000
55
45
34
52
43
34
37
23
33
45
34
43
43
37
23
33
55
45
34
34
43
37
11
33
30
RDSon max @
VGS = 2.5 V
(mΩ)
DFN1006-3
1.0 x 0.6 x 0.5
940
1600
0.45
0.89
0.72
0.77
0.75
0.52
0.65
1.05
0.5
0.89
0.72
0.89
0.89
0.65
1.05
0.5
0.45
0.89
0.72
0.52
0.89
0.65
0.33
0.5
0.6
RDSon max @
VGS = 4.5 V
(mΩ)
DFN1006B-3
1.0 x 0.6 x 0.37
Automotive
qualified
VGSth min (V)
1
1
1
0.9
0.9
0.53
0.93
0.65
0.45
2.28
2.15
0.48
1.78
1.87
1.22
0.45
0.7
0.98
0.97
0.35
0.8
0.84
0.18
0.29
0.31
Ciss typ (pF)
ID max (A)
2
1
2
2
2
2
2
yes
2
-
QG(tot) typ (nC)
ESD HBM (kV)
8
8
12
8
8
8
12
20
20
8
12
8
8
12
20
20
8
8
12
8
8
12
20
20
20
RDSon max @
VGS = 5 V
(mΩ)
VGS max (V)
20
20
20
30
30
30
30
60
60
20
20
30
30
30
60
60
20
20
20
30
30
30
30
60
60
RDSon max @
VGS = 10 V
(mΩ)
VDS max (V)
PMZB290UNE
PMZB290UN
PMZB300XN
PMZB370UNE
PMZB420UN
NX3008NBKMB
PMZB380XN
PMZB790SN
2N7002BKMB
PMZ250UN
PMZ270XN
PMZ1000UN
PMZ390UN
PMZ350XN
PMZ760SN
2N7002BKM
PMR290UNE
PMR280UN
PMR290XN
NX3008NBKT
PMR400UN
PMR370XN
NX3020NAKT*
2N7002BKT
2N7002PT
Package
name and
dimensions
(mm)
Type number
Single N-channel MOSFETs
2000
2000
2000
5200
140
20000
2000
2000
2000
5200
10000
340
74
350
1400
480
300
440
97
110
5200
4000
2200
96
550
2100
580
540
650
142
660
162
2800
830
5000
6500
125
156
335
40
65
2800
600
5200
29
47
54
4000
2200
5000
6500
5300
27
18
46
27
31
25
43
35
23
54
37
58
36
21
29
30
100
150
235
950
250
90
2500
5000
5000
6000
50
150
80
250
10000
26
36
200
270
1000
7500
7500
10000
Automotive
qualified
2.5
2.5
2.8
2.8
2
4
2
2
2.7
2.7
4
4
2
2
2
2
Ciss typ (pF)
RDSon max @
VGS = 10 V
(mΩ)
1.00
1.00
1.00
1.00
1.00
2.00
1.00
1.00
1.30
1.30
1.00
2.00
2.00
0.40
0.80
0.80
0.80
QG(tot) typ (nC)
VGSth max (V)
7.4
6
10
6
5.5
5.5
7.5
3.5
1.8
0.9
0.52
3.5
6.5
0.55
0.375
0.375
0.35
RDSon max @
VGS = 1.8 V
(mΩ)
VGSth min (V)
yes
2
yes
-
RDSon max @
VGS = 2.5 V
(mΩ)
ID max (A)
20
20
20
20
13
13
13
16
20
20
20
20
20
20
20
20
20
RDSon max @
VGS = 4.5 V
(mΩ)
ESD HBM (kV)
30
30
30
30
55
55
55
100
100
100
100
100
100
200
240
250
300
RDSon max @
VGS = 5 V
(mΩ)
VGS max (V)
PMT21EN
PMT29EN
BSP030
BSP100
PHT6N06LT
PHT6N06T
PHT8N06LT
PHT4NQ10LT
SOT223
PMT200EN*
PMT760EN*
6.5 x 3.5 x 1.65
BSP110
PHT4NQ10T
PHT6NQ10T
BSP122
BSP89
BSP126
BSP130
* in development, release Q3/2012
VDS max (V)
Type number
Package
name and
dimensions
(mm)
Single N-channel MOSFETs
12.5
9.6
24
6
4.5
6
11.2
6.8
7.4
2.4
7.4
21
-
588
492
770
250
250
190
500
374
314
108
25
300
633
100
100
100
100
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
0.45
0.95
447
645
940
1.3
127
N
0.68
0.50
1.3
850
1500
2800
0.76
58
N
NX3008PBKMB
30
8
2
0.3
0.60
1.1
4100
6500
0.55
31
N
BSS84AKMB
50
20
1
0.23
1.10
2.1
7500
8500
0.26
24
N
BSS84AKM
50
20
1
0.23
1.10
2.1
7500
8500
0.26
24
Y
PMR670UPE
20
8
2
0.48
0.50
1.3
850
1500
0.76
58
Y
NX3008PBKT
30
8
2
0.2
0.60
1.1
4100
6500
0.55
31
Y
BSS84AKT
50
20
1
0.15
1.10
2.1
0.26
24
Y
PMF170XP
20
12
-
1
0.65
1.15
200
300
2.6
280
N
NX3008PBKW
30
8
2
0.2
0.60
1.1
4100
6500
0.55
31
Y
BSS84AKW
50
20
1
0.15
1.10
2.1
0.26
24
Y
PMG85XP
20
12
-
2
0.65
1.15
4.8
560
N
BSH205
PMV33UPE
PMV160UP
NX2301P
PMV32UP
PMV75UP*
PMV48XP
PMV65XP
NX3008PBK
BSH203
BSH202
BSS84AK
BSH201
BSH207
PMN40UPE*
PMN27UP
PMN34UP
PMN27XPE*
PMN42XPE*
PMN70XPE*
PMN80XP
PMN48XP
12
20
20
20
20
20
20
20
30
30
30
50
60
12
20
20
20
20
20
20
20
20
8
8
8
8
8
12
12
12
8
8
20
20
20
8
8
8
8
12
12
12
12
12
2
2
1
4
2
2
2
-
0.75
5.3
1.2
2
4
2.2
3.5
3.9
0.23
0.47
0.52
0.18
0.3
1.52
6
5.7
5
5.7
4.5
4.1
3.2
4.1
0.40
0.45
0.45
0.50
0.45
0.47
0.75
0.55
0.60
0.40
1.00
1.10
1.00
0.40
0.45
0.45
0.45
0.75
0.75
0.75
0.45
0.75
0.95
0.95
1.1
0.95
0.9
1.25
0.95
1.1
2.1
0.95
0.95
0.95
1.25
1.25
1.25
1
1.25
900
7500
2500
3.8
14.7
3.3
4.5
15.5
6.7
8.5
7.6
0.55
2.2
2.9
0.26
3
8.8
15.6
21
15.5
15
11.5
5.2
5
8.7
200
1820
365
380
1890
560
1000
725
31
110
80
24
70
500
1820
2340
1950
1770
1410
602
550
1000
N
N
N
Y
N
N
N
N
Y
N
N
Y
N
N
N
N
N
N
N
N
N
N
BSS192
240
20
-
0.2
0.80
2.8
12000
-
55
N
BSP250
30
20
-
3
1.00
2.8
250
-
250
N
BSP220
200
20
-
0.225
0.80
2.8
12000
-
65
N
BSP225
250
20
-
0.225
0.80
2.8
15000
-
65
N
BSP230
300
20
-
0.21
1.95
2.8
17000
-
60
N
* in development, release Q3/2012
7500
7500
RDSon max @
VGS = 1.8 V
(mΩ)
1
2
RDSon max @
VGS = 2.5 V
(mΩ)
2
8
RDSon max @
VGS = 4.5 V
(mΩ)
8
20
RDSon max @
VGS = 5 V
(mΩ)
20
PMZB670UPE
RDSon max @
VGS = 10 V
(mΩ)
Automotive
qualified
SOT223
6.5 x 3.5 x 1.65
Ciss typ (pF)
SOT89
4.5 x 2.5 x 1.5
QG(tot) typ (nC)
SOT457
2.9 x 1.5 x 1.0
VGSth max (V)
SOT23
2.9 x 1.3 x 1.0
VGSth min (V)
SOT363
2.0 x 1.25 x 0.95
ID max (A)
SOT323
2.0 x 1.25 x 0.95
ESD HBM (kV)
SOT416
1.6 x 0.8 x 0.77
VGS max (V)
DFN1006-3
1.0 x 0.6 x 0.5
VDS max (V)
DFN1006B-3
1.0 x 0.6 x 0.37
PMZB350UPE
Type number
Package
name and
dimensions
(mm)
Single P-channel MOSFETs
2800
8500
8500
115
160
36
210
120
36
87
55
76
4100
900
500
47
270
190
46
118
81
112
6500
1100
43
32
40
30
46
85
102
55
150
55
41
48
44
64
129
125
82
65
380
270
73
145
8500
400
72
66
66
156
N
SOT363
2.0 x 1.25 x 0.95
SOT666
1.6 x 1.2 x 0.55
DFN2020-6
2.0 x 2.0 x 0.65
P
NX3008PBKS
30
8
2
0.2
0.60
1.1
SOT363
2.0 x 1.25 x 0.95
BSS84AKS
50
20
1
0.16
1.10
2.1
PMDT670UPE
20
8
2
0.55
0.50
1.3
SOT666
1.6 x 1.2 x 0.55
NX3008PBKV
30
8
2
0.22
0.60
1.1
BSS84AKV
50
20
1
0.17
1.10
2.1
57
4500
1600
1600
1600
1600
4500
1600
1600
7500
7500
51
70
61
53
124
165
83
123
90
75
204
550
580
2100
340
650
318
2800
2000
2200
6500
380
1400
620
2100
1100
2800
67
70
103
70
97
102
87
110
95
90
146
90
123
125
110
140
137
150
210
135
4100
6500
2000
2000
5200
2000
2000
156
8500
850
1500
4100
6500
2800
8500
Automotive
qualified
DFN2020-6
2.0 x 2.0 x 0.65
37
50
46
40
73
120
88
145
350
480
1400
225
440
5200
Ciss typ (pF)
VGSth max (V)
1
1
1
0.9
1.5
1.5
2.5
1
1.5
1
1.1
1.5
1.5
1.5
1.5
1.6
2.5
2.5
2.1
0.95
1.1
2.5
2.5
0.95
1.5
0.95
0.9
1.25
1
1
1
QG(tot) typ (nC)
VGSth min (V)
0.40
0.40
0.40
0.40
0.50
0.50
1.00
0.40
0.50
0.45
0.60
0.50
0.50
0.80
0.90
0.48
1.00
1.00
1.10
0.50
0.60
1.00
1.00
0.45
0.50
0.45
0.47
0.75
0.40
0.45
0.45
RDSon max @
VGS = 1.8 V
(mΩ)
ID max (A)
5.8
5.1
4.5
5.3
4
2.7
4.5
1.3
0.86
0.71
0.35
1
0.74
0.18
0.32
0.32
0.3
0.32
0.17
0.8
0.4
0.34
0.35
4.5
3.5
3.7
4.5
4.2
3.7
3.8
3.4
RDSon max @
VGS = 2.5 V
(mΩ)
ESD HBM (kV)
1.6
1.6
2
yes
1.5
2
yes
2
2
2
2
0.8
2
2
-
RDSon max @
VGS = 4.5 V
(mΩ)
VGS max (V)
8
8
8
12
12
12
20
8
12
8
8
12
12
20
20
20
20
20
20
8
8
20
20
8
8
8
12
12
12
12
12
RDSon max @
VGS = 5 V (mΩ)
VDS max (V)
20
20
20
20
30
30
30
20
20
30
30
30
30
30
60
60
60
60
60
20
30
60
60
20
20
20
20
20
20
30
30
RDSon max @
VGS = 10 V
(mΩ)
channel type
PMDPB28UN
PMDPB42UN
PMDPB38UNE*
PMDPB30XN*
PMDPB56XN
PMDPB95XNE*
PMDPB70EN
PMGD130UN
PMGD290XN
PMGD400UN
NX3008NBKS
PMGD175XN
PMGD370XN
NX3020NAKS*
BSS138PS
BSS138BKS
2N7002BKS
2N7002PS
NX7002AKS
PMDT290UNE
NX3008NBKV
2N7002BKV
2N7002PV
PMDPB58UPE
PMDPB65UP
PMDPB85UPE
PMDPB55XP
PMDPB70XPE
PMDPB80XP
PMDPB70XP
PMC85XP
Type number
Package name
Dual MOSFETs
3.1
2
2.9
14.4
1.9
265
185
268
660
170
3
0.88
0.72
0.89
0.52
0.7
0.65
0.33
0.72
0.6
0.5
0.6
0.33
0.45
0.52
0.5
0.6
6.3
4.5
5.4
16.5
5
5.7
5.2
5.2
130
83
34
43
34
75
37
11
38
42
33
30
11
55
34
33
30
804
380
514
785
600
550
680
680
N
N
N
N
N
N
N
N
N
N
Y
N
N
N
Y
Y
Y
Y
N
Y
Y
Y
Y
N
N
N
N
N
N
N
N
0.55
31
Y
0.26
24
Y
0.76
58
Y
0.55
31
Y
0.26
24
Y
* in development, release Q3/2012
RDSon max @
VGS = 10 V
(mΩ)
RDSon max @
VGS = 5 V (mΩ)
20
20
8
8
8
8
2
1
2
2
2
2
0.33
0.17
0.4
0.22
0.8
0.55
1.1
1.1
0.6
0.6
0.5
0.5
2.1
2.1
1.1
1.1
0.95
1.3
1600
7500
2000
8500
N
30
8
2
0.35
0.6
P
30
8
2
0.2
N
20
12
-
P
20
12
-
2800
1100
2800
Y
Y
Y
Y
Y
Y
1.1
1400
2100
2800
0.52
34
Y
0.6
1.1
4100
6500
0.55
31
Y
5.3
0.4
0.9
40
53
75
14.4
660
N
4.5
0.47
0.9
70
90
135
16.5
785
N
RDSon max @
VGS = 1.8 V
(mΩ)
2100
6500
620
1500
33
24
34
31
55
58
RDSon max @
VGS = 2.5 V
(mΩ)
1400
4100
380
850
0.5
0.26
0.52
0.55
0.45
0.76
RDSon max @
VGS = 4.5 V
(mΩ)
Automotive
qualified
VGSth max (V)
60
50
30
30
20
20
Ciss typ (pF)
VGSth min (V)
N
P
N
P
N
P
QG(tot) typ (nC)
ID max (A)
DFN2020-6
2.0 x 2.0 x 0.65
ESD HBM (kV)
TSSOP6
2.0 x 1.25 x 0.95
PMDT290UCE
VGS max (V)
NX3008CBKV
SOT666
1.6 x 1.2 x 0.55
VDS max (V)
NX1029X
channel type
Type number
Package name
Complementary types
NX3008CBKS
PMCPB5530X*
* in development, release Q3/2012
www.nxp.com
© 2012 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
Date of release: June 2012
information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and
Document order number: 9397 750 17288
may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof
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