Data Sheet

BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 — 17 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1.
Product overview
Type number
BC846BPN
Package
NXP
JEITA
NPN/NPN
complement
SOT363
SC-88
BC846BS
PNP/PNP
complement
BC856BS
1.2 Features
n
n
n
n
n
n
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
65
V
-
-
100
mA
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
open base
TR1 (NPN)
hFE
DC current gain
VCE = 5 V; IC = 2 mA
200
300
450
DC current gain
VCE = −5 V;
IC = −2 mA
200
290
450
TR2 (PNP)
hFE
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
2. Pinning information
Table 3.
Pinning
Pin
Description
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
1
2
3
1
2
3
sym019
3. Ordering information
Table 4.
Ordering information
Type number
BC846BPN
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BC846BPN
PJ*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
2 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
80
V
VCEO
collector-emitter voltage
open base
-
65
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
200
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
300
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Per device
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab618
500
Ptot
(mW)
400
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve SOT363 (SC-88)
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
3 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
625
K/W
-
-
230
K/W
-
-
416
K/W
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
in free air
[1]
Per device
thermal resistance from
junction to ambient
Rth(j-a)
[1]
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab619
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
4 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 50 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
-
-
15
nA
-
-
5
µA
IEBO
emitter-base cut-off
current
VEB = 6 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V
IC = 10 µA
-
280
-
IC = 2 mA
200
300
450
TR1 (NPN)
ICBO
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
55
100
mV
IC = 100 mA; IB = 5 mA
-
200
300
mV
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
755
850
mV
IC = 100 mA; IB = 5 mA
-
1000
-
mV
IC = 2 mA
580
650
700
mV
IC = 10 mA
-
-
770
mV
base-emitter voltage VCE = 5 V
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
1.9
-
pF
Ce
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
-
11
-
pF
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
-
-
MHz
NF
noise figure
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
-
1.9
-
dB
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
TR2 (PNP)
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
VCB = −30 V; IE = 0 A;
Tj = 150 °C
-
-
−15
nA
-
-
−5
µA
-
-
−100
nA
IC = −10 µA
-
270
-
IC = −2 mA
200
290
450
IC = −10 mA;
IB = −0.5 mA
-
−55
−100
mV
IC = −100 mA; IB = −5 mA
-
−200
−300
mV
IEBO
emitter-base cut-off
current
VEB = −6 V; IC = 0 A
hFE
DC current gain
VCE = −5 V
VCEsat
collector-emitter
saturation voltage
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
5 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VBEsat
base-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
-
−755
−850
mV
IC = −100 mA; IB = −5 mA
-
−900
-
mV
VBE
base-emitter voltage VCE = −5 V
IC = −2 mA
−600
−650
−750
mV
IC = −10 mA
-
-
−820
mV
-
2.3
-
pF
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance
VEB = −0.5 V;
IC = ic = 0 A; f = 1 MHz
-
10
-
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
-
-
MHz
NF
noise figure
VCE = −5 V; IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
-
1.6
-
dB
VCE = −5 V; IC = −0.2 mA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
-
2.9
-
dB
006aaa533
600
006aaa532
0.20
IB (mA) = 4.50
4.05
3.60
3.15
IC
(A)
hFE
0.16
400
2.70
2.25
1.80
1.35
(1)
0.12
0.90
(2)
0.08
0.45
200
(3)
0.04
0
10−2
10−1
1
10
0
102
103
IC (mA)
0
2
4
6
8
10
VCE (V)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 4.
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
6 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa536
1
006aaa534
1.3
VBEsat
(V)
1.1
VBE
(V)
0.8
0.9
(1)
(2)
0.7
(3)
0.6
0.5
0.3
0.4
10−1
1
10
102
0.1
10−1
103
1
10
102
103
IC (mA)
IC (mA)
VCE = 5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5.
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
006aaa535
10
Fig 6.
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa537
103
VCEsat
(V)
fT
(MHz)
1
102
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
10
103
1
102
10
IC (mA)
IC (mA)
VCE = 5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
TR1 (NPN): Transition frequency as a function
of collector current; typical values
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
7 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
006aab620
6
006aaa539
15
Ce
(pF)
13
Cc
(pF)
4
11
9
2
7
0
0
2
4
6
8
5
10
VCB (V)
0
4
f = 1 MHz; Tamb = 25 °C
TR1 (NPN): Collector capacitance as a
function of collector-base voltage; typical
values
006aaa541
600
Fig 10. TR1 (NPN): Emitter capacitance as a function
of emitter-base voltage; typical values
006aaa540
−0.20
IB (mA) = −2.5
−2.25
−2.0
−1.75
−1.5
−1.25
IC
(A)
hFE
−0.16
(1)
400
−0.12
−1.0
(2)
−0.75
−0.08
200
6
VEB (V)
f = 1 MHz; Tamb = 25 °C
Fig 9.
2
−0.5
(3)
−0.25
−0.04
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
0
0
−2
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 12. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
8 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa544
−1
006aaa542
−1.3
VBEsat
(V)
−1.1
VBE
(V)
−0.8
−0.9
(1)
−0.7
(2)
(3)
−0.6
−0.5
−0.3
−0.4
−10−1
−1
−10
−102
−103
−0.1
−10−1
−1
−10
−102
−103
IC (mA)
IC (mA)
VCE = −5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 13. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
006aaa543
−10
Fig 14. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa545
103
VCEsat
(V)
fT
(MHz)
−1
102
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
10
−1
−102
−10
IC (mA)
IC (mA)
VCE = −5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 15. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16. TR2 (PNP): Transition frequency as a function
of collector current; typical values
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
9 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
006aab623
10
8
Ce
(pF)
13
6
11
4
9
2
7
0
0
−2
−4
−6
006aaa547
15
Cc
(pF)
−8
−10
VCB (V)
f = 1 MHz; Tamb = 25 °C
5
0
−4
−6
VEB (V)
f = 1 MHz; Tamb = 25 °C
Fig 17. TR2 (PNP): Collector capacitance as a function
of collector-base voltage; typical values
Fig 18. TR2 (PNP): Emitter capacitance as a function
of emitter-base voltage; typical values
BC846BPN_1
Product data sheet
−2
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
10 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 19. Package outline SOT363 (SC-88)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BC846BPN
Package Description
SOT363
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
BC846BPN_1
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
11 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
11. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 20. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 21. Wave soldering footprint SOT363 (SC-88)
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
12 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC846BPN_1
20090717
Product data sheet
-
-
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
13 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BC846BPN_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 July 2009
14 of 15
BC846BPN
NXP Semiconductors
65 V, 100 mA NPN/PNP general-purpose transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Quality information . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 July 2009
Document identifier: BC846BPN_1
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