Data Sheet

BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 03 — 18 February 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: BC857BS.
1.2 Features
n
n
n
n
n
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
45
V
-
-
100
mA
200
-
450
Per transistor
VCEO
collector-emitter voltage
IC
collector current
hFE
DC current gain
VCE = 5 V; IC = 2 mA
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter TR1
2
base TR1
3
collector TR2
4
emitter TR2
5
base TR2
6
collector TR1
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
1
2
3
1
2
3
sym020
3. Ordering information
Table 3.
Ordering information
Type number
BC847BS
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BC847BS
1F*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
2 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
220
mW
[2]
-
250
mW
[1]
-
300
mW
[2]
Per device
Tamb ≤ 25 °C
total power dissipation
Ptot
-
400
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab419
500
Ptot
(mW)
(1)
400
(2)
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
3 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
568
K/W
Per transistor
thermal resistance from
junction to ambient
Rth(j-a)
in free air
[1]
[2]
-
-
500
K/W
-
-
230
K/W
[1]
-
-
416
K/W
[2]
-
-
313
K/W
thermal resistance from
junction to solder point
Rth(j-sp)
Per device
thermal resistance from
junction to ambient
Rth(j-a)
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab420
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
4 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
006aab421
103
Zth(j-a)
(K/W)
δ=1
0.75
0.50
0.33
102
0.20
0.10
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
102
10
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
-
-
15
nA
-
-
5
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
200
-
450
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
100
mV
-
-
300
mV
VBEsat
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
755
-
mV
VBE
base-emitter voltage IC = 2 mA; VCE = 5 V
580
655
700
mV
Cc
collector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
-
-
1.5
pF
Ce
emitter capacitance
IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
-
11
-
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
-
-
MHz
Per transistor
ICBO
[1]
IC = 100 mA; IB = 5 mA
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BC847BS_3
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
5 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
mgt727
600
hFE
IB (mA) = 4.0
3.6
3.2
2.8
2.4
2.0
IC
(A)
(1)
500
006aab422
0.20
0.15
1.6
400
1.2
(2)
0.8
300
0.10
0.4
200
0.05
(3)
100
0
10−1
1
102
10
0
103
0
1
2
3
4
5
VCE (V)
I C (mA)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4.
Per transistor: DC current gain as a function of
collector current; typical values
Fig 5.
mgt728
1200
VBE
(mV)
1000
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
006aab423
1.2
VBEsat
(V)
1.0
(1)
(1)
800
0.8
(2)
(2)
600
0.6
(3)
(3)
400
0.4
200
0
10−2
10−1
1
10
0.2
10−1
102
103
I C (mA)
1
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 7.
103
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847BS_3
Product data sheet
102
IC (mA)
(1) Tamb = −55 °C
Fig 6.
10
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
6 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
mgt729
104
VCEsat
(mV)
006aab424
109
fT
(Hz)
103
108
102
(1)
(3) (2)
10
10−1
1
10
102
103
107
10−1
1
102
10
IC (mA)
I C (mA)
VCE = 5 V; f = 1 MHz; Tamb = 25 °C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 9.
Per transistor: Transition frequency as a
function of collector current; typical values
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
7 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
8. Package outline
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 10. Package outline SOT363 (SC-88)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BC847BS
Package Description
SOT363
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T2: reverse taping
BC847BS_3
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
8 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
10. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 11. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 12. Wave soldering footprint SOT363 (SC-88)
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
9 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC847BS_3
20090218
Product data sheet
-
BC847BS_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 4 “Marking”: updated
Section 7 “Characteristics”: enhanced
Section 9 “Packing information”: added
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
BC847BS_2
19990428
Product specification
-
BC847BS_1
BC847BS_1
19970714
Product specification
-
-
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
10 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BC847BS_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 18 February 2009
11 of 12
BC847BS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 February 2009
Document identifier: BC847BS_3
Similar pages