Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3NM65-SH
Preliminary
Power MOSFET
3.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 3NM65-SH is an Super Junction MOSFET Structure.
It uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 3NM65-SH is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.

FEATURES
* RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 1.5 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL


ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3NM65L-TA3-T
3NM65G-TA3-T
3NM65L-TF1-T
3NM65G-TF1-T
3NM65L-TF2-T
3NM65G-TF2-T
3NM65L-TF3-T
3NM65G-TF3-T
3NM65L-TM3-R
3NM65G-TM3-R
3NM65L-TN3-R
3NM65G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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3NM65-SH

Preliminary
Power MOSFET
MARKING
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3NM65-SH

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
Single Pulsed (Note 3)
EAS
85
mJ
Avalanche Energy
7.5
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
75
TO-220F/TO-220F1
34
Power Dissipation
PD
W
TO-220F2
35
TO-251/TO-252
50
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=64mH, IAS=0.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATING
62.5
110
1.67
3.68
3.58
2.5
UNIT
°C/W
°C/W
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3NM65-SH

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0 V, ID = 250 μA
VDS = 650 V, VGS = 0 V
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10 V, ID=1.3A,
Gate-Source Charge
QGS
IG =100 μA (Note 1, 2)
Gate-Drain Charge
QDD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, VGS=10 V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=3.0A
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
650
0.6
2.5
V
10
μA
100 nA
-100 nA
V/°C
4.5
1.6
V
Ω
151
132
16
pF
pF
pF
38
3.8
7.4
32
58
100
36
nC
nC
nC
ns
ns
ns
ns
236
1.5
3.0
A
12
A
1.4
V
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3NM65-SH

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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3NM65-SH
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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