UNISONIC TECHNOLOGIES CO., LTD 3NM70-SH Preliminary Power MOSFET 3.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 3NM70-SH is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 3NM70-SH is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 2.0Ω @ VGS = 10 V, ID = 1.5 A * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3NM70G-AA3-T 3NM70L-TA3-T 3NM70G-TA3-T 3NM70L-TF1-T 3NM70G-TF1-T 3NM70L-TF2-T 3NM70G-TF2-T 3NM70L-TF3-T 3NM70G-TF3-T 3NM70L-TM3-R 3NM70G-TM3-R 3NM70L-TN3-R 3NM70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package SOT-223 TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET MARKING SOT-223 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-220 2 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 85 mJ Avalanche Energy 7.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 5.0 V/ns SOT-223 10 W TO-220 78 W Power Dissipation PD TO-220F/TO-220F1 34 W TO-220F2 35 W TO-251/TO-252 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 0.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤3.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SOT-223 TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 TO-251/TO-252 SOT-223 TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 150 UNIT °C/W θJA 62.5 °C/W 110 12.5 1.6 3.68 3.58 2.5 °C/W °C/W °C/W °C/W °C/W °C/W θJC 3 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0 V, ID = 250μA VDS = 700 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS= 50V, VGS= 10 V ID= 1.3A, IG = 100 μA Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD = 30V, VGS= 10 V, Turn-On Rise Time tR ID = 0.5A, RG = 25Ω Turn-Off Delay Time tD(OFF) (Note 1, 2) Turn-Off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Body Diode Reverse Recovery Time trr VGS=0V, IS=3.0A dIF/dt=100A/μs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 0.6 2.5 V 10 μA 100 nA -100 nA V/°С 4.5 2.0 V Ω 146 131 16 pF pF pF 37 5.2 6.4 32 59 104 36 nC nC nC ns ns ns ns 258 1.6 3.0 A 12 A 1.4 V ns μC 4 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R209-115.a 3NM70-SH Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-115.a