Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF730K-TC
Preliminary
Power MOSFET
5.5A, 400V N-CHANNEL
POWER MOSFET

DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.

FEATURES
* RDS(ON) < 0.95Ω @ VGS=10V, ID=3.0A
* Avalanche Energy Specified
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF730KL-TA3-T
UF730KG-TA3-T
UF730KL-TF1-T
UF730KG-TF1-T
UF730KL-TF2-T
UF730KG-TF2-T
UF730KL-TF3-T
UF730KG-TF3-T
UF730KL-TM3-R
UF730KG-TM3-R
UF730KL-TN3-R
UF730KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd.
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-111.a
UF730K-TC

Preliminary
Power MOSFET
MARKING
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UF730K-TC

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C)
RATINGS
UNIT
400
V
400
V
Gate-Source Voltage
±20
V
Continuous Drain Current
5.5
A
Pulsed Drain Current (Note 2)
22
A
Single Pulse Avalanche Energy (Note 3)
140
mJ
Peak Diode Recovery dv/dt (Note 4)
2
V/ns
TO-220
73
W
TO-220F/TO-220F1
38
W
TC = 25°C
TO-220F2
40
W
TO-251/TO-252
48
W
PD
Power Dissipation
TO-220
0.584
W/°C
TO-220F/TO-220F1
0.304
W/°C
Derate above 25°C
TO-220F2
0.32
W/°C
TO-251/TO-252
0.384
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 9mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤5.5A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤TJMAX

SYMBOL
VDSS
VDGR
VGSS
ID
IDM
EAS
dv/dt
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATING
62.5
110
1.71
3.31
3.125
2.6
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
SYMBOL
BVDSS
ID(ON)
TEST CONDITIONS
VGS=0V, ID=250μA
VDS>ID(ON)×RDS(ON)MAX,
VGS=10V
VDS=Rated BVDSS, VGS=0V
VGS=±20V
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
IG= 100μA (Note1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
R
Turn-Off Delay Time
tD(OFF)
G=25Ω (Note1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD=5.5A
Reverse Recovery Time
tRR
ISD = 5.5A, dISD/dt = 100A/μs
(Note 1)
Reverse Recovery Charge
QRR
MIN TYP MAX UNIT
400
V
5.5
A
2.0
25
±100
μA
nA
4.0
0.95
V
Ω
250
83
7
pF
pF
pF
44
3.4
3.4
44
48
268
83
nC
nC
nC
ns
ns
ns
ns
220
1.0
5.5
A
22
A
1.6
V
ns
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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UF730K-TC

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VDD
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-111.a
UF730K-TC

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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www.unisonic.com.tw
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QW-R205-111.a
UF730K-TC
Preliminary
Power MOSFET
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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