Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF830K-TC
Preliminary
Power MOSFET
4.5A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF830K-TC is a N-Channel enhancement mode
silicon gate power MOSFET is designed high voltage, high speed
power switching applications such as switching regulators,
switching converters, solenoid, motor drivers, relay drivers.

FEATURES
* RDS(ON) < 1.65Ω @ VGS = 10V, ID = 2.5 A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF1-T
UF830KG-TF1-T
UF830KL-TF2-T
UF830KG-TF2-T
UF830KL-TF3-T
UF830KG-TF3-T
UF830KL-TM3-T
UF830KG-TM3-T
UF830KL-TN3-R
UF830KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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UF830K-TC

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RG=20kΩ, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2
V/ns
TO-220
73
W
TO-220F/TO-220F1
38
W
Power Dissipation
PD
TO-220F2
40
W
TO-251/TO-252
46
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
110
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 10mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATING
62.5
100.3
1.71
3.31
3.125
2.7
UNIT
°C/W
°C/W
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UF830K-TC
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Preliminary
Power MOSFET
ELECTRICAL SPECIFICATIONS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
Drain-Source Leakage Current
IDSS
VDS= Rated BVDSS, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
ID=2.5A, VGS=10V
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
IG= 100μA (Note1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time (Note 1)
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
R
Turn-Off Delay Time
tD(OFF)
G=25Ω (Note1, 2)
Turn-Off Fall Time
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Continuous Source to Drain Current
IS
(Note 4)
Pulse Source to Drain Current
ISD
Source to Drain Diode Voltage (Note 1)
VSD
ISD=4.5A, VGS=0V
Reverse Recovery Time (Note 1)
trr
ISD=4.5A, VGS=0V,
dIF / dt =100A/μs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
4. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
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TYP MAX UNIT
25
±100
V
μA
nA
4.0
1.65
V
Ω
267
64
7
pF
pF
pF
41
4
4
44
49
268
79
nC
nC
nC
ns
ns
ns
ns
4.5
18
1.6
250
1.0
A
A
V
nS
μC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UF830K-TC

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UF830K-TC
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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