Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UD9930M
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION

The UTC UD9930M is a dual N & P-channel Power MOSFET,
it uses UTC’s advanced technology to provide the customers with
a minimum on-state resistance, high switching speed, low gate
chare.
The UTC UD9930M is suitable for DC/DC converters and LCD
monitor inverter.
FEATURES

* N-channel: 30V/5.5A
RDS(ON) < 45 mΩ @ VGS=10V, ID=5A
RDS(ON) < 70 mΩ @ VGS=4.5V, ID=3A
* P-channel: -30V/-4.1A
RDS(ON) < 70 mΩ @ VGS=-10V, ID=-4A
RDS(ON) < 100 mΩ @ VGS=-4.5V, ID=-2A
* High switching speed
* Low gate chare
SYMBOL

P1S
P2S
P2G
P1G
P1N1D
P2N2D
N2G
N1G
N1S

N2S
ORDERING INFORMATION
Note:
Ordering Number
Package
UD9930MG-S08-R
SOP-8
Pin Assignment: G: Gate
D: Drain
1
2
3
N1D/ N1S/
N1G
P1D N2S
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
4
5
N2G
P2G
6
7
N2D/ P1S/
P2D P2S
8
P1G
Packing
Tape Reel
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QW-R211-029.a
UD9930M

Preliminary
Power MOSFET
MARKING
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QW-R211-029.a
UD9930M

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
RATINGS
UNIT
N-CHANNEL
P-CHANNEL
Drain to Source Voltage
VDSS
30
-30
V
Gate to Source Voltage
VGSS
±25
±25
TA=25°C
5.5
-4.1
Drain Current (Note 3)
Continuous
ID
A
TA=70°C
4.4
-3.3
Drain Current (Note 1)
Pulsed
IDM
20
-20
Total Power Dissipation @ TA=25°C
PD
1.38
W
Linear Derating Factor
0.01
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
SYMBOL
θJA
RATINGS
90
UNIT
°C/W
N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250µA
Breakdown Voltage Temperature
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
Coefficient
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0 V, TJ=25°C
Gate-Source Leakage
Forward
VDS=24V, VGS=0 V, TJ=70°C
IGSS
Current
VGS=25V, VDS=0V
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-state Resistance
VGS=10V, ID=5A
RDS(ON)
(Note 2)
VGS=4.5V, ID=3A
Forward Transconductance
gFS
VDS=10V, ID=5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VDS=15V, VGS=4.5V, ID=5A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
VDS=15V, ID=1A,VGS=10V,
RG=6Ω, RD=15Ω,
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1.2A, VGS=0V
(Note 2)
Body Diode Reverse Recovery Time
tRR
IS=1.7A, VGS=0V, I/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
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MIN
TYP
MAX
30
UNIT
V
0.04
V/°C
1
25
+100
µA
µA
nA
3.0
45
70
5.2
V
mΩ
mΩ
S
145
110
60
pF
pF
pF
7
2
4
7
10
18
8
nC
nC
nC
ns
ns
ns
ns
1.0
21
16
0.2
A
1.2
A
1.2
V
ns
nC
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UD9930M
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Preliminary
Power MOSFET
P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0 V, ID=-250µA
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
VDS=-30V, VGS=0 V, TJ=25°C
VDS=-24V, VGS=0 V, TJ=70°C
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
MIN
TYP
MAX
-30
UNIT
V
-0.04
V/°C
-1
-25
+100
-100
µA
µA
nA
nA
Gate-Source Leakage
Forward
IGSS
Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Drain-Source On-state Resistance
VGS=-10V, ID=-4A
70
mΩ
RDS(ON)
(Note 2)
100
mΩ
VGS=-4.5V, ID=-2A
Forward Transconductance
gFS
VDS=-10V, ID=-5A
4.8
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
200
pF
=-25V,
V
=0
V,
f=1.0MHz
V
Output Capacitance
COSS
90
pF
DS
GS
70
pF
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
7
nC
VDS=-15V, VGS=-4.5V, ID=-5A
Gate to Source Charge
QGS
2
nC
Gate to Drain Charge
QGD
4
nC
Turn-ON Delay Time (Note 2)
tD(ON)
11
ns
VDS=-15V, ID=-1A,VGS=-10V,
Rise Time
tR
8
ns
RG=6Ω, RD=15Ω,
Turn-OFF Delay Time
tD(OFF)
20
ns
Fall-Time
tF
18
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1.2A, VGS=0V
-1.2
V
(Note 2)
Body Diode Reverse Recovery Time
tRR
21
ns
IS=-1.7A, VGS=0V,
Body Diode Reverse Recovery
dI/dt=- 100A/μs
QRR
16
nC
Charge
Notes: 1. Pulse width limited by Max. Junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10sec; 186℃/W when mounted on Min. copper
pad.
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QW-R211-029.a
UD9930M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
N-Channel
P-Channel
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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