UNISONIC TECHNOLOGIES CO., LTD 7N65-CB Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) < 1.1 Ω @ VGS = 10 V, ID = 3.5 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 7N65L-TA3-T 7N65G-TA3-T TO-220 7N65L-TF3-T 7N65G-TF3-T TO-220F 7N65L-TF1-T 7N65G-TF1-T TO-220F1 7N65L-TF2-T 7N65G-TF2-T TO-220F2 7N65L-TF3T-T 7N65G-TF3T-T TO-220F3 7N65L-TM3-T 7N65G-TM3-T TO-251 7N65L-TN3-R 7N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R205-114.a 7N65-CB Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-114.a 7N65-CB Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 24 A Avalanche Energy Single Pulsed (Note 3) EAS 245 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns TO-220 125 W TO-220F/TO-220F1 40 W TO-220F3 Power Dissipation PD TO-220F2 42 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 10mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3 TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F3 TO-220F2 TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA RATING 62.5 UNIT °C/W 110 1.0 θJC 3.2 °C/W 2.97 2.27 3 of 7 QW-R205-114.a 7N65-CB Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 V VDS = 650V, VGS = 0V 10 μA Forward VGS = 30V, VDS = 0V 100 nA Gate- Source Leakage Current IGSS -100 nA Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.5A 1.1 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 359 pF VDS=25V, VGS=0V, Output Capacitance COSS 114 pF f=1.0 MHz 7 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 118 nC VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS 8.0 nC ID=100μA (Note 1, 2) 8.4 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 48 ns Turn-On Rise Time tR 36 ns VDD=30V, VGS=10V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 270 ns Turn-Off Fall Time tF 50 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS 7 A Forward Current Maximum Pulsed Drain-Source Diode ISM 28 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7 A 1.4 V Body Diode Reverse Recovery Time trr 400 ns IS=7A, di/dt=100A/μs Body Diode Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-114.a 7N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-114.a 7N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-114.a 7N65-CB Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-114.a