UNISONIC TECHNOLOGIES CO., LTD Preliminary UF100N07 Power MOSFET 100A, 70V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF100N07 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220 FEATURES * Fast switching speed * RDS(ON) < 15mΩ @ VGS=10V, ID=50A * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF100N07L-TA3-T UF100N07G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source UF100N07L-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-117.a UF100N07 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 70 V Gate-Source Voltage VGSS ±20 V Continuous ID 100 A Drain Current 400 A Pulsed IDM Avalanche Current (Note 2) IAR 100 A Avalanche Energy Single Pulsed (Note 3) EAS 500 mJ Peak Diode Recovery dv/dt dv/dt 3.6 V/ns Power Dissipation PD 89 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 100A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 1.40 UNIT °C/W °C/W 2 of 6 QW-R209-117.a UF100N07 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=70V, VGS=0V Forward VDS=0V, VGS=+20V Gate- Source Leakage Current IGSS Reverse VDS=0V, VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=50A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD VGS=0V, IS=100A Reverse Recovery Time tRR VGS=0V, IS=30A, di/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 70 2.0 10 +100 -100 V µA nA nA 4.0 15 V mΩ 2930 615 75 pF pF pF 275 16 26 88 155 900 370 nC nC nC ns ns ns ns 100 400 1.4 76 0.18 A A V ns μC 3 of 6 QW-R209-117.a UF100N07 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-117.a UF100N07 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-117.a UF100N07 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-117.a