UNISONIC TECHNOLOGIES CO., LTD UF150N06 Preliminary Power MOSFET 150A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF150N06 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220 FEATURES * Fast switching speed * RDS(ON) < 8.0mΩ @ VGS =10V, ID =75A * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF150N06L-TA3-T UF150N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source UF150N06L-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-120.a UF150N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous ID 150 A Drain Current Pulsed IDM 600 A Avalanche Current (Note 2) IAR 150 A Avalanche Energy Single Pulsed (Note 3) EAS 1125 mJ Peak Diode Recovery dv/dt dv/dt 3.7 V/ns Power Dissipation PD 231 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 150A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 625 0.54 UNIT °C/W °C/W 2 of 6 QW-R209-120.a UF150N06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250 µA Drain-Source Leakage Current IDSS VDS=60V,VGS =0V Forward VDS=0V, VGS=+20V Gate-Source Leakage Current IGSS Reverse VDS=0V, VGS=-20V ON CHARACTERISTICS(Note1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=75A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note 2) Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate Source Charge QGS IG=100µA (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDS=30V, VGS=10V, ID=0.5A, Turn-ON Rise Time tR RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD VGS=0V, IS=150A Body Diode Reverse Recovery Time tRR VGS=0V, IS=30A dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 V µA nA nA 4.0 8.0 V mΩ 60 2.0 4800 1265 125 pF pF pF 475 26 54 120 270 1300 645 nC nC nC ns ns ns ns 150 600 1.5 84 240 A A V ns nC 3 of 6 QW-R209-120.a UF150N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-120.a UF150N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-120.a UF150N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-120.a