Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA06R310M
Power MOSFET
9.1A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UNA06R310M is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, etc.
The UTC UNA06R310M is suitable for DC/DC converters.

FEATURES
* RDS(ON) < 31 mΩ @ VGS=10V, ID=15A
RDS(ON) < 45 mΩ @ VGS=4.5V, ID=10A
* Low RDS(ON)

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA06R310ML-TN3-T
UNA06R310MG-TN3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TJ=150°C)
TC=25°C
ID
21.4
A
Pulsed Drain Current
IDM
50
A
Continuous Source-Drain Diode Current
TC=25°C
IS
20.8
A
Single Pulse Avalanche Current
IAS
25
A
Avalanche Energy
EAS
16
mJ
Maximum Power Dissipation
TC=25°C
PD
31.25
W
Operating Junction Temperature Range
TJ
-55~150
°C
Storage Temperature Range
TSTG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 18.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL RESISTANCE RATINGS (Steady State)
PARAMETER
Junction to Ambient
Junction-to-Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
110
4.0
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
(Note 1)
IGSS
BVDSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=70°C
VGS=±20V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, ID=15A
VGS=4.5V, ID=10A
VDS=15V, ID=15A
1.0
Forward Transconductance (Note 1)
gFS
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
IG=250µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG =25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Body Diode Voltage
VSD
IS=15A, VGS=0V
Continuous Source-Drain Diode Current
IS
TC=25°C
Pulse Diode Forward Current (Note 1)
ISM
IF=15A, dI/dt=100A/µs,
Body Diode Reverse Recovery Time
trr
TJ=25°C
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
1
20
±100
3.0
31
45
V
µA
µA
nA
20
V
mΩ
mΩ
S
380
70
51
1.3
pF
pF
pF
Ω
3.2
58
3.5
5.0
32
38
344
96
1.0
22
14
nC
nC
nC
ns
ns
ns
ns
1.5
20.8
80.3
V
A
A
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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