Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N60-CB
Preliminary
Power MOSFET
5.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION

The UTC 5N60-CB is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES

* RDS(ON) < 2.2Ω @ VGS =10V, ID = 2.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N60L-TA3-T
5N60G-TA3-T
5N60L-TF1-T
5N60G-TF1-T
5N60L-TF2-T
5N60G-TF2-T
5N60L-TF3-T
5N60G-TF3-T
5N60L-TM3-T
5N60G-TM3-T
5N60L-TN3-R
5N60G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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5N60-CB

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed (Note 2)
Drain Current
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
dv/dt
RATINGS
600
±30
5
20
3.6
65
4.5
100
UNIT
V
V
A
A
A
mJ
V/ns
W
SYMBOL
RATINGS
UNIT
62.5
°C/W
110
1.25
°C/W
°C/W
3.47
°C/W
2.3
°C/W
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F/TO-220F1
Power Dissipation
PD
36
W
TO-220F2
TO-251/TO-252
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 5.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
TO-220
TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0V, ID = 250μA
VDS=600V, VGS = 0V
VGS=30V, VDS = 0V
VGS=-30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=5.0A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=5.0A, VGS=0V,
dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
1
100
-100
2.0
4.0
2.2
V
μA
nA
V
Ω
760
72
5.5
pF
pF
pF
19
3.5
2.4
56
22
119
28
nC
nC
nC
ns
ns
ns
ns
5
20
1.4
366
1.67
A
A
V
ns
μC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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