Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4NM65-SHA
Preliminary
Power MOSFET
4.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 4NM65-SHA is a high voltage super junction
MOSFET and is designed to have better characteristics.
The UTC 4NM65-SHA Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and
reliability. such as low gate charge, low on-state resistance and
have a high power density and high rugged avalanche
characteristics. This super junction MOSFET usually used at
AC/DC power conversion, and industrial power applications.

FEATURES
* RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.0A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness


SYMBOL
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4NM65L-TA3-T
4NM65G-TA3-T
4NM65L-TF3-T
4NM65G-TF3-T
4NM65L-TF1-T
4NM65G-TF1-T
4NM65L-TF2-T
4NM65G-TF2-T
4NM65L-TM3-R
4NM65G-TM3-R
4NM65L-TN3-R
4NM65G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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4NM65-SHA

Preliminary
Power MOSFET
MARKING
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4NM65-SHA

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
4.0
A
Drain Current
Pulsed (Note2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note3)
EAS
155
mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.83
V/ns
TO-220
106
W
TO-220F
34
W
Power Dissipation
PD
TO-220F1/TO-220F2
36
W
TO-251TO-252
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=159mH, IAS=1.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤4.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
UNIT
62.5
°C/W
110
1.18
3.67
3.47
2.5
°C/W
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0 V, ID = 250μA
650
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
Forward
IGSS
Reverse
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID = 0.5A,
Turn-On Rise Time
tR
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 50V,ID= 1.3A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Drain-Source Diode Forward
IS
Current
Pulsed Drain-Source Diode Forward
ISM
Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =4.0A
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=10A
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
Gate-Source Leakage Current
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
0.6
2.5
V
10
μA
100 nA
-100 nA
V/°С
4.5
1.5
V
Ω
250
177
19
pF
pF
pF
54
50
114
37
55
3.8
9.2
ns
ns
ns
ns
nC
nC
nC
244
1915
4.0
A
16
A
1.4
V
ns
nC
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4NM65-SHA

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4NM65-SHA

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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4NM65-SHA
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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