Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7NM64
Preliminary
Power MOSFET
5.0A, 640V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 7NM64 is an Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 7NM64 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.

FEATURES
* Low drain-source on-resistance: RDS(ON) < 0.95 Ω (max.)
by using Super Junction Structure
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM64L-TN3-R
7NM64G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
7NM64L-TN3-R

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) TN3: TO-252
(3) Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R209-131.a
7NM64

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
640
V
Gate-Source Voltage
VGSS
±25
V
Avalanche Current (Note 2)
IAR
2
A
Continuous
ID
5
A
Drain Current
20
A
Pulsed (Note 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
EAS
35
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.0
V/ns
Power Dissipation
PD
60
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 1.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Junction to Case
θJC
Note: When mounted on 1 inch² FR-4, 2 Oz copper board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
2.08
UNIT
°C/W
°C/W
2 of 6
QW-R209-131.a
7NM64

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 640V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate-Source Charge
QGS
ID=100µA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=5.0A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=5.0A, VGS=0V
dI/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
MIN TYP MAX UNIT
640
1.0
1
100
-100
V
μA
nA
nA
3.0
0.95
V
Ω
250
180
20
pF
pF
pF
40
4.2
11.5
45
90
190
70
nC
nC
nC
ns
ns
ns
ns
470
4.6
5
A
20
A
1.4
V
ns
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R209-131.a
7NM64

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R209-131.a
7NM64
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
5 of 6
QW-R209-131.a
7NM64
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R209-131.a
Similar pages