Datenblatt

Temperature Compensated Crystal Oscillators
SXO-2200HGED SERIES
TCXO or VC-TCXO
TRI-STATE
XTAL
Initial frequnecy tolerance at +25゜
C ±2゜
C
CLK OSC
Actual size
0.014 gm (wt.)
SXO-2200HGED
#1
#2
#3
0.35
#1
0.15x0.15
#2
2.0±0.2
#4
TCXO or VC-TCXO
Temperature range
Input voltage change
Frequency
Stability
Output load change
Aging
Operating
temperature
Supply voltage (VDD)
Operating
Conditions
Control voltage (Vcon)
0.6
1
2
3
4
5
6
0.7
0.3
#6
#5
1.8
#4
0.5
CONNECTION
PIN
0.7
VCXO
0.8±0.1
E/D control voltage
(Pin#2)
Supply voltage
0.35
#3
TCXO
VC-TCXO
SXO-2200HGED
SXO-2200HGEDV
GND
Vcontrol
“ L”
OPEN or “H”
“Z”
OUTPUT
GND
TCXO
OPEN or “H”
“Z”
OUTPUT
NC or GND
VDD
SOLDERING PATTERN
0.95
0.4
1.4
0.55
0.7
2.3
OUTPUT WAVEFORM
OCXO
“ L”
Z : high impedance
0.5
Absolute
Max. Ratings
Vcontrol voltage (Vcon)
E/D control voltage
(Pin#2)
Storage temperature
Reflow condition
SXO-2200HGED
Standard frequencies (MHz)
Optional Operating
Temperature*4
Low limit / Symbol
High limit / Symbol
● ENABLE / DISABLE OUTPUT CONTROL
● GPS APPLICATION
● CLIPPED SINE WAVEFORM
● PACKAGE SIZE 2.5x2.0 mm
C to +85゜
C (Standard)
-30゜
C to +85゜
C (W = Option, frequency dependent)
-40゜
D = +1.8V, F = +2.5V, H = +2.8V, J = +3.0V, K = +3.3V DC ±5%
+0.9V ±0.8V (VDD = +1.8V)
n.a.
1/2 VDD ±1V (VDD = +2.5V to +3.3V)
VIH : 80% VDD min. (Enable)
VIL : 20% VDD max. (Disable)
-0.6V to +4.6V DC
n.a.
-0.6V to VDD +0.6V DC
-0.6V to VDD +0.6V (+4.6V max.)
C to +85゜
C
-40゜
1.5 mA max. (13.000 MHz to 30.000 MHz)
1.7 mA max. (30.000 MHz to 40.000 MHz)
2 mA max. (40.000 MHz to 52.000 MHz)
2 μA max. (Pin#2 = ViL)
0.8 Vp-p min.
10 kΩ. // 10 pF
Clipped sine wave (DC-coupling)
Output
Frequency slope vs. temperature
CLIPPED SINE
Specifications
SXO-2200HGED*1
SXO-2200HGEDV*1
13.000 MHz to 52.000 MHz
±1.5 ppm max.*2
±1.5 ppm max. (Vcon = 1/2 VDD)*2
TCXO
VC-TCXO
±0.5 ppm max. over -30゜
C to +85゜
C (referred to +25゜
C)*3
±0.2 ppm max. at VDD ±5% DC
±0.2 ppm max. at 10 kΩ ±10% with 10 pF ±10%
±1 ppm max. per year at +25゜
C ±3゜
C
Disable current
Level
Load
(-40゜
C to +85゜
C)
Waveform
Frequency
Voltage control
Adjustment
(Vcon)
Frequency slope
Harmonic distortion
Start-up time
SSB phase noise (26.000 MHz)
+1.8 to +3.3 V
STANDARD SMD TCXO
Input current
Short-term frequency stability
IR reflow resistance
TEST CIRCUIT
2.5x2.0 mm
(+1.8V to +3.3V FIXED MODELS) 2.5x2.0 mm
Item
General part number
Frequency range
#6
13 to 52 MHz
STANDARD SPECIFICATIONS
SXO-2200HGED
2.5±0.2
#5
± 0.5 ppm GPS
±8 ppm to ±13 ppm (VDD = +1.8V)
±9 ppm to ±15 ppm (VDD = +2.5V to +3.3V)
n.a.
n.a.
Positive
-5 dBc max.
10 ms max.
-135 dBc / Hz, Typical at 1 kHz offset
±0.1 ppm / ゜
C max. (-20゜
C to +75゜
C)
±0.3 ppm / ゜
C max. (-30゜
C to +85゜
C)
±1 ppb max. (Allan variance Tau = 0.1 sec.)
±1 ppm max. (referred to frequency before reflow)
+250゜
C ±10゜
C for 10 seconds
+170゜
C ±10゜
C for 1 to 2 minutes (preheating)
16.368, 16.369, 19.200, 26.000, 27.456, 33.600, 38.400, 52.000
C/g
-10゜
+55゜
C / ff
C/h
-15゜
+60゜
C / gg
C/i
-20゜
+65゜
C / hh
C/j
-25゜
+70゜
C / ii
C/k
-30゜
+75゜
C / jj
C/l
-35゜
+80゜
C / kk
C/m
-40゜
+85゜
C / ll
PACKAGE DATA
Terminal plating
RoHS
120
Compliant (Pb-free)
∅
1.5 +
0
-0 .1
1.75±0.1
4.0±0.1
2.0±0.1
D
L
C
Lid
Base
Sealing
Terminal
SXO-2200HGED
Metal
Ceramic
Seam
Tungsten (metalized)
Gold / Nickel
(surface) / (under)
TAPE SPECIFICATIONS
A
SXO-2200HGEDV
Item
Package
M
B
J
MCF
( * 1 ) Fi nal par t n umber to be as s i gned w i th pac k age ty pe, T C XO or VC - T C XO, i nput v ol tage, oper ati ng tem pe rat ure and f requency.
e. g. S X O- 2200H GED -J -52MH z
( * 2 ) R ef er r ed t o nom i nal fr equenc y befor e r efl ow s ol der i ng.
( * 3 ) A t V c on = 1 /2 V DD D C for SXO -2200H GED V.
( * 4 ) S el ec t " low l i mi t" and "hi gh l i mi t" for new oper ati ng tem per atur e c om bi nati on fr om the l i s ts .
F
A
B
C
D
F
J
L
M
Reel Dia.
Qty/Reel
2.85
2.35
8.0
3.5
4.0
1.0
0.25
0.9
180
2000pcs
Similar pages