Datenblatt

±0.1 or ±0.28 ppm
Supply voltage (VDD)
Control voltage (Vcon)
Supply voltage
Input current
0.07 gm (wt.)
SXO-9000D
(10-pads)
#8
7.0±0.2
#7 #6
#5
5.0±0.2
5.0±0.2
#9
Marking
#10
#4
#1
#2
#2
1.7 max.
1.4
#2
0.6
1.0
#1
#2
#3
#4
0.8
#10
2.54
Bottom View
3.2
Bottom View
#5
0.9
#9
#4
1.27 #8
#3
5.08
#7
#6
0.8
3.68
0.9
1.4
#1
5.08
SXO-9000E
(10-pads)
PIN
1
2
3
4
5.0±0.2
#8
#10
#7
#6
3.2±0.2
#9
#5
Marking
#2
#3
#4
1.7max
#1
#10
#9
#2
#3
#4
#5
Bottom View
#8
1.2
4.15
#7
2.2
#1
#6
PIN
1
2
3
4
5
6
7
8
9
10
PIN
1
2
3
4
5
6
7
8
9
10
PIN CONNECTION
SXO-9000C
CONNECTION
VC-TCXO
TCXO
Vcon
NC or GND
GND
GND
OUTPUT
OUTPUT
+V DC
+V DC
SXO-9000D
CONNECTION
VC-TCXO
TCXO
NC or GND
NC or GND
NC or GND
NC or GND
NC or GND
NC or GND
GND
GND
OUTPUT
OUTPUT
NC or GND
NC or GND
NC or GND
NC or GND
E/D
E/D
+V DC
+V DC
Vcon
NC or GND
SXO-9000E
CONNECTION
VC-TCXO
TCXO
Vcon
NC or GND
NC or GND
NC or GND
E/D
E/D
GND
GND
NC or GND
NC or GND
OUTPUT
OUTPUT
Option : Vc Filter
(0.033 μF)
NC or GND
+V DC
NC or GND
n.a.
Standard frequencies (MHz)
Low limit / Symbol
Optional Operating
Temperature*4
High limit / Symbol
±5 ppm to ±20 ppm
C/g
-10゜
+55゜
C / ff
C/h
-15゜
+60゜
C / gg
C/i
-20゜
+65゜
C / hh
C/j
-25゜
+70゜
C / ii
C/k
-30゜
+75゜
C / jj
C/l
-35゜
+80゜
C / kk
C/m
-40゜
+85゜
C / ll
( * 1 ) Fi nal par t num ber to be as s i gned w i th pac k age ty pe, T C XO or VC - T C XO, fr equenc y s tabi l i ty, i nput v ol tage and f requency.
e. g. S X O- 9000C M V -QQ2 -3.3V -26M H z
( * 2 ) V con = 1/ 2V DD D C f or SXO-9000C /D /E- C SV & C MV.
( * 3 ) D C - c ut f or S X O - 90 00C & SXO- 9000D . D C c oupl i ng for SXO- 9000E.
( * 4 ) S el ec t " low li m it " a nd "hi gh l i m i t" for new oper ati ng temper atur e c ombi nati on fr om the l i s ts .
PACKAGE DATA
Package
Item
Lid
Base
Sealing
Terminal
Terminal plating
RoHS
TAPE SPECIFICATIONS
4.0±0.1
SXO-9000
L
Metal
Ceramic
Seam
Tungsten (metalized)
Gold / Nickel
(surface) / (under)
Compliant (Pb-free)
OUTPUT WAVEFORM
Clipped Sine Output
XTAL
±5 ppm to ±15 ppm
n.a.
±5 ppb / day, ±20 ppb / 168 hours (7 days)
n.a.
Positive
n.a.
Positive
-5 dBc max.
3.5 ms max.
-140 dBc / Hz, Typical at 1 kHz offset
n.a.
100 kΩ min.
n.a.
100 kΩ min.
±1 ppb max. (Allan variance Tau = 0.1 sec.)
±1 ppm max. (referred to frequency before reflow)
+250゜
C ±10゜
C for 10 seconds
+170゜
C ±10゜
C for 1 to 2 minutes (preheating)
10.000, 12.800, 19.200, 19.440, 20.000, 20.480, 24.576, 26.000, 30.720
Reflow condition
#3
1.7 max.
#1
Symmetry
Rise and fall times
Output
Level
(-40゜
C to +85゜
)
Load
Waveform
Frequency adjustment
voltage control (1/2 VDD ±1/2 VDD )
Holdover
Frequency slope
Harmonic distortion
Start-up time
SSB phase noise (20.000 MHz)
Vcon input impedance
Short-term frequency stability
IR reflow resistance
CMOS Output
∅
1.5 +
0
-0 .1
1.75±0.1
Actual size
Marking
Vcontrol voltage (Vcon)
Storage temperature
2.0±0.1
D
SXO-9000E
Absolute
Max. Ratings
C
0.125 gm (wt.)
C to +70゜
C (S1 = Standard 1)
-10゜
C to +85゜
C (S2 = Standard 2)
-40゜
+2.7V to +5.5V DC ±5%
n.a.
+1.65V ± 1.65V
n.a.
+1.65V ± 1.65V
-0.6V to +6.0V DC
-0.6V to VDD +0.6V
-0.6V to VDD +0.6V
n.a.
n.a.
DC
DC
C to +85゜
C
-40゜
3 mA max.
5 mA max.
n.a.
45% to 55% at 1/2 VDD level
n.a.
5 ns max. (10% to 90% VDD level)
0.8 Vp-p min.
VOL = 10% VDD max. VOH = 90% VDD min.
10 kΩ // 10 pF
15 pF max.
Clipped sine wave*3
CMOS
Operating temperature
CLK OSC
Input voltage change
Output load change
Aging (Stratum 3)
Actual size
#3
Clipped Sine OUTPUT
CMOS OUTPUT
TCXO
VC-TCXO
TCXO
VC-TCXO
KK2 : ±0.1 ppm max. over -10゜
C to +70゜
C (referred to +25゜
C)*2
QQ2 : ±0.28 ppm max. over -40゜
C to +85゜
C (referred to +25゜
C)*2
±0.2 ppm max. at VDD ±5% DC
±0.1 ppm max. at load ±10%
±4.6 ppm max. at +40゜
C for 20 years including overall freq. stability
VCXO
Frequency
Stability
Operating
Conditions
7.0±0.2
10.000 MHz to 40.000 MHz
±1.5 ppm max. (after 2 times of reflow soldering)
Temperature range
SXO-9000D
SXO-9000C-CMV*1
SXO-9000D-CMV
SXO-9000E-CMV
TCXO
Frequency range
Initial frequnecy tolerance at +25゜
C ±2゜
C
Output waveform
TCXO or VC-TCXO
M
B
J
0.125 gm (wt.)
Specifications
SXO-9000C-CSV*1 SXO-9000C-CM*1
SXO-9000D-CSV
SXO-9000D-CM
SXO-9000E-CSV
SXO-9000E-CM
A
Actual size
● FEMTOCELL APPLICATION
● CMOS or CLIPPED SINE WAVEFORM
● PACKAGE SIZE 5.0x3.2 mm or 7.0x5.0 mm
SXO-9000C-CS*1
SXO-9000D-CS
SXO-9000E-CS
General part number
CMOS or CLIPPED SINE
+2.7 to +5.5 V
STANDARD SMD TCXO
STANDARD SPECIFICATIONS
Item
#4
5.0x3.2 & 7.0x5.0 mm
mm
(+2.7V to +5.0V FIXED MODELS) 5.0x3.2
7.0x5.0 mm
SXO-9000C
SXO-9000C
(4-pads)
10 to 40 MHz
MCF
SXO-9000 SERIES
TCXO or VC-TCXO
OCXO
Temperature
Compensated
Crystal Oscillators
Quartz Crystal
Units
F
SXO-9000C & SXO-9000D
A
B
C
D
F
J
L
M
Reel Dia.
Qty/Reel
8.2
5.8
16.0
7.5
8.0
1.6
0.3
2.16
254
1000pcs
(100pcs)
A
B
C
D
F
J
L
M
Reel Dia.
Qty/Reel
5.9
3.7
12.0
5.5
8.0
1.6
0.3
2.00
254
1000pcs
(100pcs)
SXO-9000E
Option : Vc Filter
(0.033 μF)
NC or GND
+V DC
NC or GND
133
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