Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC846S
NPN general purpose double
transistor
Product data sheet
Supersedes data of 1999 May 28
1999 Sep 01
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC846S
FEATURES
• Two transistors in one package
• Reduces number of components and board space
handbook, halfpage
• No mutual interference between the transistors.
6
6
5
5
4
4
TR2
APPLICATIONS
TR1
• General purpose switching and small signal
amplification.
1
2
3
1
Top view
2
3
MAM340
DESCRIPTION
NPN double transistor in an SC-88 (SOT363) plastic six
lead package.
Fig.1 Simplified outline (SC-88) and symbol.
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MARKING
TYPE NUMBER
MARKING CODE
BC846S
4Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base
−
65
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
1999 Sep 01
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC846S
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
416
K/W
note 1
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
IE = 0; VCB = 30 V
−
−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
μA
IC = 0; VEB = 5 V
−
−
100
nA
DC current gain
IC = 2 mA; VCE = 5 V
110
−
−
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
−
100
mV
IC = 100 mA; IB = 5 mA; note 1
−
−
300
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
770
−
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
1.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Sep 01
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
MGL738
103
handbook, halfpage
BC846S
MGL739
1200
handbook, halfpage
VBE
(mV)
VCEsat
(mV)
1000
(1)
800
(2)
102
(1)
600
(2)
(3)
(3)
400
10
10−1
1
102
10
IC (mA)
200
10−1
103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
Collector-emitter saturation voltage as a
function of collector current; typical values.
10
1
102
IC (mA)
103
Base-emitter voltage as a function of
collector current; typical values.
MGL740
400
handbook, full pagewidth
hFE
(1)
300
(2)
200
(3)
100
0
10−1
VCE = 5 V.
(1) Tamb = 150 °C.
1
10
102
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 DC current gain as a function of collector current; typical values.
1999 Sep 01
4
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC846S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1999 Sep 01
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC846S
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Sep 01
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
115002/02/pp7
Date of release: 1999 Sep 01
Document order number: 9397 750 06102
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