Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BV
NPN general purpose double
transistor
Product data sheet
2001 Sep 10
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
FEATURES
BC847BV
PINNING
• 300 mW total power dissipation
PIN
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
6
5
• Excellent coplanarity due to straight leads
• Low collector capacitance
DESCRIPTION
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
4
6
5
APPLICATIONS
4
TR2
TR1
• General purpose switching and amplification.
1
DESCRIPTION
2
1
3
2
3
MAM447
Top view
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV.
MARKING
TYPE NUMBER
BC847BV
2001 Sep 10
MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
1F
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
45
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 10
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
IE = 0; VCB = 30 V
−
−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
μA
IC = 0; VEB = 5 V
−
−
100
nA
DC current gain
IC = 2 mA; VCE = 5 V
200
−
450
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
655
700
mV
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
−
100
mV
IC = 100 mA; IB = 5 mA; note 1
−
−
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−
755
−
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
−
1.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV;f = 1 MHz −
11
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
−
−
MHz
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
10
Fig.2 DC current gain; typical values.
2001 Sep 10
4
102
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
Graphical information BC847BV
MHB971
600
MHB972
1200
BE
(mV)
1000
handbook, halfpage
handbook,
halfpage
V
hFE
500
(1)
800
400
(1)
(2)
300
600
200
400
(2)
(3)
(3)
100
200
0
10−1
1
10
102
0
10−2
103
10−1
1
10
IC (mA)
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.3 DC current gain; typical values.
MHB973
104
handbook, halfpage
VCEsat
(mV)
1200
BEsat
(mV)
1000
103
800
102
103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHB974
handbook,
halfpage
V
(1)
(2)
600
(3)
102
400
(1)
200
(2)
(3)
10
10−1
1
10
102
IC (mA)
0
10−1
103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 10
5
1
10
102
IC (mA)
103
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Sep 10
EUROPEAN
PROJECTION
6
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Sep 10
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001 Sep 10
Document order number:
9397 750 08589
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