Si4401BDY Datasheet

Si4401BDY
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) (Ω)
ID (A)
0.014 at VGS = - 10 V
- 10.5
0.021 at VGS = - 4.5 V
- 8.7
Qg (Typ.)
40
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
D
Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free)
Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Energy
Maximum Power Dissipationa
IS
L = 1 mH
TA = 25 °C
TA = 70 °C
- 8.7
- 8.3
- 5.9
- 50
- 1.36
30
EAS
45
mJ
2.9
1.5
1.85
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 2.6
IAS
PD
V
- 10.5
IDM
Pulsed Drain Current
Avalanche Current
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
36
43
70
84
16
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73140
S09-0866-Rev. D, 18-May-09
www.vishay.com
1
Si4401BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 40 V, VGS = 0 V
-1
VDS = - 40 V, VGS = 0 V, TJ = 70 °C
- 10
VDS = - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
- 3.0
± 100
µA
- 30
A
VGS = - 10 V, ID = - 10.5 A
0.011
0.014
VGS = - 4.5 V, ID = - 8.7 A
0.0165
0.021
gfs
VDS = - 15 V, ID = - 10.5 A
26
VSD
IS = - 2.7 A, VGS = 0 V
- 0.74
- 1.1
40
55
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 15 V, VGS = - 5 V, ID = - 10.5 A
14
1.4
2.8
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
10
Ω
4.2
16
25
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
15
25
97
150
47
75
IF = - 2.1 A, dI/dt = 100 A/µs
35
55
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
10
30
20
TC = 125 °C
10
3V
25 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
www.vishay.com
2
5
0
0.0
0.5
1.0
1.5
2.0
- 55 °C
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73140
S09-0866-Rev. D, 18-May-09
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4500
0.030
4000
3500
0.020
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.025
VGS = 4.5 V
0.015
VGS = 10 V
0.010
Ciss
3000
2500
2000
1500
Coss
1000
Crss
0.005
500
0
0.000
0
10
20
30
40
0
50
5
ID - Drain Current (A)
10
20
25
30
35
40
125
150
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
6
1.8
VDS = 15 V
ID = 10.5 A
VGS = 10 V
ID = 10.5 A
1.6
4
3
2
1
1.4
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
15
1.2
1.0
0.8
0
0
5
10
15
20
25
30
35
0.6
- 50
40
- 25
0
25
50
75
100
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
50
0.05
R DS(on) - On-Resistance
IS - Source Current (A)
0.04
TJ = 150 °C
10
TJ = 25 °C
ID = 10.5 A
0.03
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73140
S09-0866-Rev. D, 18-May-09
10
www.vishay.com
3
Si4401BDY
Vishay Siliconix
0.8
30
0.6
25
0.4
ID = 250 µA
20
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
15
0.0
10
- 0.2
5
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10 - 2
150
10 - 1
1
TJ - Temperature (°C)
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
1s
TC = 25 °C
Single Pulse
10 s
DC
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
100
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
t1
t2
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73140
S09-0866-Rev. D, 18-May-09
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73140.
Document Number: 73140
S09-0866-Rev. D, 18-May-09
www.vishay.com
5
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000