Si4465ADY Datasheet

Si4465ADY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) (Ω)
ID (A)b
0.009 at VGS = - 4.5 V
- 13.7
0.011 at VGS = - 2.5 V
- 12.4
0.016 at VGS = - 1.8 V
- 10
Qg (Typ.)
55 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 1.8 V Rated
• 100 % Rg Tested
S
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D
Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free)
Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150
°C)a, b
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
IDM
IS
ISM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipation
a, b
ID
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Limit
-8
±8
- 13.7
- 11
- 20
- 16
- 40
- 2.5
40
3.0
1.95
6.5
4.2
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
34
67
15
Maximum
41
80
19
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t ≤ 10 s.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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1
Si4465ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Static
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Max.
Unit
- 1.0
V
± 100
nA
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
-5
VDS ≥ − 5 V, VGS = - 4.5 V
RDS(on)
Typ.
- 20
µA
A
VGS = - 4.5 V, ID = - 14 A
0.0075
0.009
VGS = - 2.5 V, ID = - 12 A
0.0092
0.011
VGS = 1.8 V, ID = 10 A
0.013
0.016
gfs
VDS = - 10 V, ID = - 14 A
58
VSD
IS = - 2.1 A, VGS = 0 V
- 0.57
- 1.2
55
85
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
10
Rg
2.5
3.8
td(on)
33
50
170
255
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDS = - 4 V, VGS = - 4.5 V, ID = - 14 A
VDD = - 4 V, RL = 4 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 6 Ω
tf
Source-Drain Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IF = - 2.1 A, dI/dt = 100 A/µs
nC
6
168
255
112
170
85
130
81
125
Ω
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
2.0
VGS = 5 thru 2 V
1.6
1.5 V
I D – Drain Current (A)
I D – Drain Current (A)
32
24
16
8
1.2
TC = 125 °C
0.8
25 °C
0.4
1V
- 55 °C
0.5
1.0
1.5
2.0
0.0
0.0
2.5
0.6
0.9
1.2
VGS – Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
8500
0.017
6800
VGS = 1.8 V
0.014
0.011
VGS = 2.5 V
0.008
1.5
Ciss
5100
3400
Coss
1700
Crss
VGS = 4.5 V
0.005
0
8
16
24
32
0
0.0
40
1.6
3.2
4.8
6.4
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
8.0
1.5
8.0
ID = 14 A
VGS = 1.8 V
ID = 14 A
6.4
R DS(on) – On-Resistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
0.3
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
RDS(on) – On-Resistance (Ω)
0
0.0
VDS = 4 V
4.8
3.2
VDS = 6 V
1.3
1.1
VGS = 4.5 V
ID = 14 A
0.9
1.6
0.0
0
21
42
63
Qg – Total Gate Charge (nC)
Gate Charge
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
84
105
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
T j = 150 °C
R DS(on) – On-Resistance (Ω)
IS – Source Current (A)
100
10
T j = 25 °C
1
0.04
0.03
0.02
125 °C
0.01
25 °C
0
0.00
0
0.6
0.3
1.2
0.9
0
1.5
1
VSD – Source-to-Drain Voltage (V)
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
100
0.3
0.2
Power (W)
V GS(th) Variance (V)
80
ID = 5 mA
0.1
ID = 250 µA
60
40
0.0
20
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ – Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
I D - Drain Current (A)
Limited by R DS(on)*
10
10 ms
100 ms
1
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
10
1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operatin Area
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
ID – Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
TC – Case Temperature (°C)
8.0
2.0
6.4
1.6
Power Dissipation (W)
Power Dissipation (W)
Current Derating
4.8
3.2
1.6
1.2
0.8
0.4
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC – Case Temperature (°C)
TA – Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C
1. Duty Cycle, D =
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73856.
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000