DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product data sheet Supersedes data of 2001 Aug 10 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BV PINNING • 300 mW total power dissipation PIN • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads DESCRIPTION • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. 6 5 4 6 5 4 APPLICATIONS TR2 • General purpose switching and amplification. TR1 DESCRIPTION 1 PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV. Top view 2 1 3 2 3 MAM450 MARKING TYPE NUMBER BC857BV 2001 Nov 07 MARKING CODE Fig.1 Simplified outline (SOT666) and symbol. 3F 2 NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2001 Nov 07 3 VALUE UNIT 416 K/W NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor IE = 0; VCB = −30 V − − −15 nA IE = 0; VCB = −30 V; Tj = 150 °C − − −5 μA IC = 0; VEB = −5 V − − −100 nA DC current gain IC = −2 mA; VCE = −5 V 200 − 450 VBE base-emitter voltage IC = −2 mA; VCE = −5 V −600 −655 −750 mV VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −100 mV IC = −100 mA; IB = −5. mA; note 1 − − −400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −755 − mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 2.2 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2001 Nov 07 4 NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV Graphical information BC857BV MHB975 1000 MHB976 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 −800 (1) −600 (2) 600 (1) 400 −400 (2) (3) 200 (3) 0 −10−2 −10−1 −200 1 10 −0 −10−2 102 103 IC (mA) −1 −10 VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.3 Fig.2 DC current gain; typical values. MHB977 −104 handbook, halfpage −10−1 −102 −103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHB978 −1200 BEsat (mV) −1000 handbook, halfpage V VCEsat (mV) (1) −103 −800 (2) −600 (3) −102 −400 (1) −200 (2) (3) −10 −10−1 −1 −10 0 −10−1 −102 −103 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 5 −1 −10 −102 IC (mA) −103 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 6 NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Nov 07 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09041