Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC857BV
PNP general purpose double
transistor
Product data sheet
Supersedes data of 2001 Aug 10
2001 Nov 07
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
BC857BV
PINNING
• 300 mW total power dissipation
PIN
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
• Excellent coplanarity due to straight leads
• Improved thermal behaviour due to flat leads
DESCRIPTION
• Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
6
5
4
6
5
4
APPLICATIONS
TR2
• General purpose switching and amplification.
TR1
DESCRIPTION
1
PNP double transistor in a SOT666 plastic package.
NPN complement: BC847BV.
Top view
2
1
3
2
3
MAM450
MARKING
TYPE NUMBER
BC857BV
2001 Nov 07
MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
3F
2
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BV
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
IE = 0; VCB = −30 V
−
−
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−5
μA
IC = 0; VEB = −5 V
−
−
−100
nA
DC current gain
IC = −2 mA; VCE = −5 V
200
−
450
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600
−655
−750
mV
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−
−100
mV
IC = −100 mA; IB = −5. mA; note 1
−
−
−400
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
−755
−
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
2.2
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV;
f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V;
f = 100 MHz
100
−
−
MHz
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Nov 07
4
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BV
Graphical information BC857BV
MHB975
1000
MHB976
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
−800
(1)
−600
(2)
600
(1)
400
−400
(2)
(3)
200
(3)
0
−10−2
−10−1
−200
1
10
−0
−10−2
102
103
IC (mA)
−1
−10
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3
Fig.2 DC current gain; typical values.
MHB977
−104
handbook, halfpage
−10−1
−102
−103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHB978
−1200
BEsat
(mV)
−1000
handbook,
halfpage
V
VCEsat
(mV)
(1)
−103
−800
(2)
−600
(3)
−102
−400
(1)
−200
(2)
(3)
−10
−10−1
−1
−10
0
−10−1
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
−1
−10
−102
IC (mA)
−103
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Nov 07
EUROPEAN
PROJECTION
6
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Nov 07
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2001 Nov 07
Document order number: 9397 750 09041
Similar pages