Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMF21
12 V PNP loadswitch
Product data sheet
2004 Jan 12
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
FEATURES
QUICK REFERENCE DATA
• Low VCEsat transistor and resistor-equipped transistor in
one package
SYMBOL
PARAMETER
TYP.
MAX. UNIT
−
−12
V
−500
mA
500
mΩ
• Very small 1.6 × 1.2 mm ultra thin package
TR1; PNP; low VCEsat transistor
• Reduced component count.
VCEO
collector-emitter
voltage
IC
collector current (DC) −
RCEsat
equivalent
on-resistance
APPLICATIONS
• Line switches
−
• Battery charger switches
TR2; NPN; resistor-equipped transistor
• Power supply switches
VCEO
collector-emitter
voltage
−
50
V
IO
output current (DC)
−
100
mA
R1
bias resistor
10
−
kΩ
R2
bias resistor
10
−
kΩ
• Drive switches
• General purpose analog switches.
DESCRIPTION
Low VCEsat PNP transistor and NPN resistor-equipped
transistor in a SOT666 plastic package (see “Ordering
information” for package details).
PINNING
PIN
MARKING
TYPE NUMBER
PEMF21
DESCRIPTION
1
emitter TR1
2
base TR1
MARKING CODE
3
collector TR2
2F
4
emitter TR2
5
base TR2
6
collector TR1
handbook, halfpage
6
5
4
5
6
R1
R2
TR2
TR1
1
2
Top view
Fig.1
3
1
4
2
3
MHC707
Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PEMF21
2004 Jan 12
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 6 leads
2
VERSION
SOT666
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Transistor TR1
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−12
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
200
mW
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
Vi
input voltage
positive
−
+40
V
negative
Transistor TR2
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
200
mW
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
416
K/W
Per device
Rth(j-a)
thermal resistance from junction to
ambient
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. Reflow soldering is the only recommended soldering method.
2004 Jan 12
3
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Transistor TR1
ICBO
collector-base cut-off current
VCB = −15 V; IE = 0
−
−
−100
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
nA
hFE
DC current gain
VCE = −2 V; IC = −10 mA
200
−
−
VCEsat
collector-emitter saturation voltage IC = −200 mA; IB = −10 mA
−
−
−250
mV
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA; note 1 −
300
500
mΩ
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −50 mA; note 1 −
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA; note 1
−
−
−0.9
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
280
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0; f = 1 MHz −
−
10
pF
Transistor TR2
ICBO
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
1
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
400
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
300
mV
Vi(off)
input-off voltage
VCE = 5 V; IC = 100 µA
−
−
0.5
V
Vi(on)
input-on voltage
VCE = 0.3 V; IC = 10 mA
3
−
−
V
R1
input resistor
7
10
13
kΩ
R2
-------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
−
2.5
VCB = 10 V; IE = ie = 0; f = 1 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 12
4
pF
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
MHC697
600
hFE
500
MHC698
−1200
C
(mA)
−1000
handbook,
halfpage
I
handbook, halfpage
(1)
(1)
(2)
(3)
(4)
(5)
−800
400
300
(6)
(7)
−600
(2)
(8)
200
−400
(9)
−200
(10)
(3)
100
0
−10−1
−1
−10
0
−102
−103
IC (mA)
−2
0
Transistor TR1; VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Transistor TR1;
Tamb = 25 °C.
(1) IB = −7.0 mA.
(2) IB = −6.3 mA.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MHC699
−1200
−4
−6
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
−8
−10
VCE (V)
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Collector current as a function of
collector-emitter voltage; typical values.
MHC700
−1200
handbook, halfpage
handbook, halfpage
VBE
(mV)
VBEsat
(mV)
−1000
−1000
(1)
−800
(1)
−800
(2)
(2)
−600
−600
−400
−200
−10−1
−1
(3)
−400
(3)
−10
−102
−200
−10−1
−103
IC (mA)
−1
Transistor TR1; VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Transistor TR1; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
2004 Jan 12
5
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
MHC701
−103
handbook, halfpage
MHC702
103
handbook, halfpage
RCEsat
(Ω)
VCEsat
(mV)
102
(1)
−102
(2)
(3)
10
−10
1
(1)
(2)
(3)
−1
−10−1
−1
−102
−10
10−1
−10−1
−103
IC (mA)
−1
−10
Transistor TR1; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Transistor TR1; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MHC703
1
−102
Equivalent on-resistance as a function of
collector current; typical values.
MHC704
103
handbook, halfpage
handbook, halfpage
−103
IC (mA)
hFE
VCEsat
(V)
(1)
102
(2)
(3)
10−1
(1)
10
(2)
(3)
10−2
1
10
IC (mA)
1
10−1
102
1
Transistor TR2; IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Transistor TR2; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 12
6
10
IC (mA)
102
DC current gain as a function of collector
current; typical values.
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
MHC705
102
handbook, halfpage
MHC706
10
handbook, halfpage
Vi(on)
Vi(off)
(V)
(V)
10
(1)
(1)
1
(2)
(3)
(2)
(3)
1
10−1
10−1
1
10
IC (mA)
10−1
10−2
102
10−1
1
IC (mA)
10
Transistor TR2; VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Transistor TR2; VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
Fig.11 Input-off voltage as a function of collector
current; typical values.
2004 Jan 12
7
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-08
06-03-16
SOT666
2004 Jan 12
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product data sheet
12 V PNP loadswitch
PEMF21
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 12
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/01/pp10
Date of release: 2004 Jan 12
Document order number: 9397 750 12204
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