Data Sheet

PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
„
„
„
„
SOT457 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency, leading to less heat generation
1.3 Applications
„ Major application segments:
‹ Automotive 42 V power
‹ Telecom infrastructure
‹ Industrial
„ DC-to-DC converter
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
Conditions
-
-
100
V
IC
collector current (DC)
-
-
1
A
ICM
peak collector current
-
-
3
A
RCEsat
equivalent on-resistance
-
-
200
mΩ
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1, 2, 5, 6
collector
3
base
4
emitter
Simplified outline
6
5
Symbol
4
1, 2, 5, 6
3
1
2
3
4
sym014
3. Ordering information
Table 3.
Ordering information
Type number Package
PBSS8110D
Name
Description
Version
-
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking
Type number
Marking code[1]
PBSS8110D
A8
[1]
Made in Malaysia
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
2 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
120
V
VCEO
collector-emitter voltage
open base
-
100
V
VEBO
emitter-base voltage
open collector
-
5
V
ICM
peak collector current
Tj(max)
-
3
A
IC
continuous collector current
-
1
A
IB
continuous base current
-
0.3
A
Ptot
total power dissipation
[1]
-
300
mW
[2]
-
550
mW
Tamb ≤ 25 °C
[3]
-
700
mW
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
001aaa493
800
Ptot
(mW)
600
(1)
400
(2)
(3)
200
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB; 6cm2 collector mounting pad
(2) FR4 PCB; 1cm2 collector mounting pad
(3) FR4 PCB; standard footprint
Fig 1.
Power derating curves
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
3 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction to ambient in free air
Rth(j-a)
thermal resistance from junction to
soldering point
Rth(j-s)
in free air
Typ
Unit
[1]
416
K/W
[2]
227
K/W
[3]
178
K/W
[1]
83
K/W
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting pad.
001aaa494
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
1 (10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 PCB; standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
4 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
ICBO
collector-base cut-off
current
Conditions
Min
Typ
Max
Unit
VCB = 80 V; IE = 0 A
-
-
100
nA
VCB = 80 V; IE = 0 A;
Tj = 150 °C
-
-
50
μA
ICES
collector-emitter
cut-off current
VCE = 80 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 1 mA
150
-
-
VCE = 10 V; IC = 250 mA
VCEsat
collector-emitter
saturation voltage
150
-
500
VCE = 10 V; IC = 0.5 A
[1]
100
-
-
VCE = 10 V; IC = 1 A
[1]
80
-
-
IC = 100 mA; IB = 10 mA
-
-
40
mV
IC = 500 mA; IB = 50 mA
-
-
120
mV
IC = 1 A; IB = 100 mA
-
-
200
mV
-
160
200
mΩ
[1]
RCEsat
equivalent
on-resistance
IC = 1 A; IB = 100 mA
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
-
-
1.05
V
VBEon
base-emitter turn-on
voltage
VCE = 10 V; IC = 1 A
-
-
0.9
V
fT
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
100
-
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
-
-
7.5
pF
[1]
Pulse test tp ≤ 300 μs; δ ≤ 0.02.
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
5 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa497
600
001aaa495
1000
VBE
(mV)
hFE
(1)
800
(1)
400
(2)
(2)
600
(3)
200
(3)
400
0
10−1
1
102
10
103
104
IC (mA)
200
10−1
VCE = 10 V
1
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
10
(3) Tamb = 100 °C
DC current gain as a function of collector
current; typical values
001aaa504
1
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
001aaa505
103
VCEsat
(V)
VCEsat
(mV)
10−1
102
(1)
(2)
(3)
10−2
10−1
1
10
102
10
10−1
103
104
IC (mA)
1
10
102
103
104
IC (mA)
IC/IB = 20; Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
6 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa506
104
VCEsat
(mV)
001aaa498
1200
VBEsat
(mV)
1000
(1)
103
800
(2)
(3)
600
102
400
10
10−1
1
10
102
103
104
IC (mA)
200
10−1
IC/IB = 50; Tamb = 25 °C
1
10
102
103
104
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa499
1200
VBEsat
(mV)
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
001aaa500
1000
VBEsat
(mV)
1000
800
800
600
600
400
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20; Tamb = 25 °C
Fig 9.
400
10−1
10
102
103
104
IC (mA)
IC/IB = 50; Tamb = 25 °C
Base-emitter saturation voltage as a function
of collector current; typical values
Fig 10. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS8110D_2
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
7 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa496
2
IB (mA) = 35
31.5
28
24.5
21
17.5
14
IC
(A)
1.6
1.2
001aaa501
103
RCEsat
(Ω)
102
10.5
10
7
0.8
3.5
1
0.4
0
0
1
2
3
4
5
10−1
10−1
(1)
(2)
(3)
1
10
102
VCE (V)
Tamb = 25 °C
103
104
IC (mA)
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
001aaa502
103
Fig 12. Equivalent on-resistance as a function of
collector current; typical values
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
1
1
10−1
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20; Tamb = 25 °C
001aaa503
103
10−1
10−1
10
102
103
104
IC (mA)
IC/IB = 50; Tamb = 25 °C
Fig 13. Equivalent on-resistance as a function of
collector current; typical values
Fig 14. Equivalent on-resistance as a function of
collector current; typical values
PBSS8110D_2
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
8 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
D
SOT457
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
REFERENCES
IEC
JEDEC
JEITA
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
Fig 15. Package outline
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
9 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS8110D_2
20091211
Product data
-
PBSS8110D_1
Modifications:
PBSS8110D_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
•
Table 2 “Discrete pinning”: amended
Figure 3 “DC current gain as a function of collector current; typical values”: updated
Figure 11: updated
Figure 15 “Package outline”: updated
20040423
Product data
-
PBSS8110D_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
10 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS8110D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 11 December 2009
11 of 12
PBSS8110D
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: PBSS8110D_2
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