Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS8110T
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2003 Jul 28
2003 Dec 22
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
QUICK REFERENCE DATA
FEATURES
• SOT23 package
SYMBOL
• Low collector-emitter saturation voltage VCEsat
VCEO
collector-emitter voltage
100
V
• High collector current capability: IC and ICM
IC
collector current (DC)
1
A
• Higher efficiency leading to less heat generation
ICM
repetitive peak collector
current
3
A
RCEsat
equivalent on-resistance
200
mΩ
• Reduced printed-circuit board requirements.
APPLICATIONS
PARAMETER
MAX.
UNIT
PINNING
• Major application segments
PIN
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• Power management
DESCRIPTION
1
base
2
emitter
3
collector
– DC/DC converters
– Supply line switching
handbook, halfpage
3
– Battery charger
3
– LCD backlighting.
• Peripheral drivers
1
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
1
– Inductive load driver (e.g. relays,
buzzers and motors).
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS8110T
*U8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS8110T
2003 Dec 22
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
120
V
VCEO
collector-emitter voltage
open base
−
100
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
3
A
IB
base current (DC)
−
300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Tamb ≤ 25 °C; note 2
−
480
mW
limited by Tj max
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
MLE354
500
Ptot
handbook, halfpage
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
160
120
Tamb (°C)
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
Fig.2 Power derating curves.
2003 Dec 22
3
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
THERMAL CHARACTERISTICS
SYMBOL
Rth( j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
mle356
103
(1)
Zth
(K/W)
(2)
(3)
(4)
(5)
102
(6)
(7)
δ=
P
(8)
10
tp
T
(9)
t
tp
T
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
(1) δ = 1.0.
(3) δ = 0.5.
(5) δ = 0.2.
(7) δ = 0.05.
(9) δ = 0.01.
(2) δ = 0.75.
(4) δ = 0.03.
(6) δ = 0.1.
(8) δ = 0.02.
(10) δ = 0.0.
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
2003 Dec 22
4
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle355
103
Zth
(K/W)
(1)
(2)
(3)
102
(4)
(5)
(6)
δ=
P
(7)
10
(8)
(9)
(10)
tp
T
t
tp
T
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.03.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.
Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad.
2003 Dec 22
5
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 80 V; IE = 0
−
−
100
nA
VCB = 80 V; IE = 0; Tj = 150 °C
−
−
50
μA
ICES
collector-emitter cut-off current
VCE = 80 V; VBE = 0
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 4 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 10 V; IC = 1 mA
150
−
−
VCE = 10 V; IC = 250 mA
150
−
500
VCE = 10 V; IC = 500 mA; note 1
100
−
−
VCE = 10 V; IC = 1 A; note 1
80
−
−
IC = 100 mA; IB = 10 mA
−
−
40
mV
IC = 500 mA; IB = 50 mA
−
−
120
mV
IC = 1 A; IB = 100 mA; note 1
−
−
200
mV
VCEsat
collector-emitter saturation voltage
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
−
165
200
mΩ
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.05
V
VBEon
base-emitter turn-on voltage
VCE = 10 V; IC = 1 A
−
−
0.9
V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
7.5
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Dec 22
6
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle352
600
MLE362
1.2
handbook, halfpage
VBE
(V)
hFE
(1)
(1)
400
0.8
(2)
(2)
(3)
200
0.4
(3)
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
DC current gain as a function of collector
current; typical values.
MLE366
1
10
102
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLE353
1
handbook, halfpage
handbook, halfpage
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
10−2
10−1
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
Tamb = 25 °C.
Fig.7
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
7
1
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle357
10
MLE363
10
handbook, halfpage
VCEsat
(V)
VBEsat
(V)
1
1
(1)
(2)
10−1
(3)
10−2
10−1
1
10
10−2
10−1
10−1
10−3
10−4
IC (mA)
10
102
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
IC/IB = 50.
Tamb = 25 °C.
Fig.9
1
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
MLE364
10
MLE365
1
handbook, halfpage
handbook, halfpage
VBEsat
VBEsat
(V)
(V)
1
10−1
10−1
1
10
102
10−1
10−1
103
104
IC (mA)
10
10
102
103
104
IC (mA)
IC/IB = 20.
Tamb = 25 °C.
IC/IB = 50.
Tamb = 25 °C.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
8
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
mle358
2
(2)
IC
RCEsat
(3)
(4)
(5)
(6)
(A)
1.6
MLE359
103
handbook, halfpage
(1)
(Ω)
102
(7)
1.2
(8)
10
(9)
0.8
(10)
1
0.4
(1)
10−1
0
0
1
2
3
4
10−1
5
1
10
102
VCE (V)
Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 3500 μA.
IB = 3150 μA.
IB = 2800 μA.
IB = 2450 μA.
(5)
(6)
(7)
(8)
IB = 2100 μA.
IB = 1750 μA.
IB = 1400 μA.
IB = 1050 μA.
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
MLE360
RCEsat
(Ω)
(Ω)
102
102
10
10
1
1
1
10
102
MLE361
103
handbook, halfpage
RCEsat
10−1
10−1
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(9) IB = 700 μA.
(10) IB = 350 μA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
103
handbook, halfpage
(2)
(3)
10−1
10−1
103
104
IC (mA)
1
10
102
103
104
IC (mA)
IC/IB = 20.
Tamb = 25 °C.
IC/IB = 50.
Tamb = 25 °C.
Fig.15 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.16 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Dec 22
9
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Dec 22
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
10
NXP Semiconductors
Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 22
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/02/pp12
Date of release: 2003 Dec 22
Document order number: 9397 750 12008
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