UNISONIC TECHNOLOGIES CO., LTD 11NM60 Power MOSFET 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM60 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM60 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM60L-TA3-T 11NM60G-TA3-T 11NM60L-TF1-T 11NM60G-TF1-T 11NM60L-TF3-T 11NM60G-TF3-T 11NM60L-TF3-T 11NM60G-TF3-T 11NM60L-TM3-R 11NM60G-TM3-R 11NM60L-TN3-R 11NM60G-TN3-R 11NM60L-TQ2-T 11NM60G-TQ2-T 11NM60L-TQ2-R 11NM60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel Tube Tape Reel 1 of 7 QW-R209-040.F 11NM60 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-040.F 11NM60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current Continuous ID 11 (Note 2) A Pulsed Drain Current Pulsed (Note 3) IDM 44 (Note 2) A Avalanche Current (Note 3) IAR 4.4 A Single Pulsed Avalanche Energy(Note 4) EAS 97 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 5.0 V/ns TO-220/TO-263 160 W TO-220F/TO-220F1 Power Dissipation PD 24 W TO-220F2 TO-251/TO-252 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature. 3. Repetitive Rating : Pulse width limited by maximum junction temperature. 4. L=10mH, IAS=4.4A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-220F1/TO-220F2 TO-263 TO-251/TO-252 TO-220/TO-263 TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS UNIT 62.5 °C/W 110 0.78 °C/W °C/W 5.2 °C/W 1 °C/W 3 of 7 QW-R209-040.F 11NM60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=600V, VGS=0V Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A , Gate-Source Charge QGS IG=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω Turn-ON Rise Time tR VGS=10V (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V Reverse Recovery Time trr IS=11A, VGS=0V di/dt=200A/μs (Note 1) Reverse Recovery Charge Qrr MIN TYP MAX UNIT 600 2.5 10 ±100 V µA nA 4.5 0.50 V Ω 800 320 28 pF pF pF 100 7 20 50 100 220 100 nC nC nC ns ns ns ns 11 44 1.4 350 5 A A V ns μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R209-040.F 11NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-040.F 11NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-040.F 11NM60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-040.F