Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT3400-H
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UTC UT3400-H is an N-ch enhancement MOSFET
providing the customers with perfect RDS(ON) and low gate charge.
This device can be operated with 2.5V low gate voltage.
The UTC UT3400-H is optimized for applications, such as a load
switch or in PWM.

FEATURES
* VDS (V)=30V
* ID=5.8 A
* RDS(ON) < 32mΩ @ VGS =10V, ID =5.8A
RDS(ON) < 35mΩ @ VGS=4.5V, ID =5A
RDS(ON) < 52mΩ @ VGS=2.5V, ID =4A

SYMBOL

ORDERING INFORMATION
Ordering Number
UT3400G-AE3-R
Note: Pin Assignment: G: Gate D: Drain

Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT3400-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
5.3
A
Pulsed Drain Current (Note 2)
IDM
21.2
A
Power Dissipation
PD
1.56
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Pulse width ≤300μs, duty cycle≤0.5%
4. L = 50mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note)
θJA
Note: Surface mounted on 1 in2 copper pad of FR4 board with 2oz

RATINGS
80
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current
Drain to Source On-state Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =24V,VGS =0V
VGS =±12V, VDS =0V
30
VGS(TH)
ID(ON)
VDS =VGS, ID =250µA
VDS =5V, VGS =4.5V
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4 A
0.4
30
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS =15V, VGS =0V, f =1MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS =0V, VDS =0V, f =1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS =4.5V,VDS =10V, ID=1A
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF) RG =25Ω
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VGS =4.5V, VDS =10V, ID =4A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS =0V
Diode Continuous Forward Current ( Note 1)
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle≤0.5%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
1
100
V
µA
nA
0.75
0.9
28
30
36
32
35
52
V
A
mΩ
mΩ
mΩ
695
45
36
1.5
3.0
pF
pF
pF
Ω
4.5
13
27
8.3
8.4
1
2.2
9
25
51
16
12
2
4
ns
ns
ns
ns
nC
nC
nC
1
5.3
V
A
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UT3400-H
Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
300
300
250
Drain Current, ID (µA)
250
Drain Current, ID (µA)
Drain Current vs. Gate Threshold Voltage
200
150
100
200
150
100
50
50
0
0
10
20
30
40
0
50
0
Drain-Source On-State Resistance
Characteristics
VGS=4.5V
ID=5A
5
4
VGS=2.5V
ID=4A
3
2
1
0
Drain Current vs. Source to Drain Voltage
0.8
Drain Current, ID (A)
Drain Current, ID (A)
1.0
VGS=10V
ID=5.8A
6
1.5
1.0
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
7
0.5
0.6
0.4
0.2
0
0
50
100
250
150
200
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
0.2
0.4
0.6
0.8
Source to Drain Voltage, VSD (V)
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UT3400-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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