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TPH3002PS
PRODUCT SUMMARY (TYPICAL)
VDS (V)
600
RDS(on) ()
0.29
Qrr (nC)
GaN Power
Low-loss Switch
29
S
Features





Low Qrr
Free-wheeling diode not required
Quiet Tab™ for reduced EMI at high dv/dt
GSD pin layout improves high speed design
RoHS compliant
S
D
Applications





G
High frequency operation
Compact DC-DC converters
AC motor drives
Battery chargers
Switch mode power supplies
TO-220 Package
Absolute Maximum Ratings (TC=25°C unless otherwise stated)
Symbol
Parameter
Limit Value
Unit
ID25°C
Continuous Drain Current @TC=25°C
9
A
ID100°C
Continuous Drain Current @TC=100°C
6
A
33
A
IDM
Pulsed Drain Current (pulse width:100 s)
VDSS
Drain to Source Voltage
600
V
VTDS
Transient Drain to Source Voltage a
750
V
VGSS
Gate to Source Voltage
±18
V
PD25°C
Maximum Power Dissipation
65
W
Case
-55 to 150
°C
Junction
-55 to 175
°C
-55 to 150
°C
260
°C
TC
Operating Temperature
TJ
TS
TCsold
Storage Temperature
Soldering peak Temperature b
Thermal Resistance
Symbol
Parameter
Typical
Unit
RΘJC
Junction-to-Case
2.3
°C /W
RΘJA
Junction-to-Ambient
62
°C /W
Notes
a: For 1 usec, duty cycle D=0.1
b: For 10 sec, 1.6mm from the case
December 2, 2013, DA
TPH3002PS
www.transphormusa.com
1
TPH3002PS
Electrical Characteristics
Symbol
(TC=25C° unless otherwise stated)
Parameter
Min
Typical
Max
Unit
Test Conditions
Static
VDSS-MAX
Maximum Drain-Source Voltage
600
VGS(th)
Gate Threshold Voltage
1.35
1.8
-
0.29
-
0.76
-
2.5
-
10
RDS(on)
RDS(on)
IDSS
IDSS
Drain-Source On-Resistance
(TJ = 25°C)
Drain-Source On-Resistance
(TJ = 175°C)
Drain-to-Source
Leakage Current, TJ = 25°C
Drain-to-Source
Leakage Current, TJ = 150°C
V
VGS=0V
2.35
V
VDS=VGS, ID=1mA
0.35
Ω
VGS=8V, ID =5.5A, TJ = 25°C
Ω
VGS=8V, ID =5.5A,TJ = 175°C
µA
VDS=600V, VGS=0V, TJ = 25°C
µA
VDS=600V, VGS=0V, TJ = 150°C
60
Dynamic
CISS
Input Capacitance
-
785
-
COSS
Output Capacitance
-
26
-
CRSS
Reverse Transfer Capacitance
-
3.5
-
CO(er)
Output Capacitance,
energy related
-
36
-
CO(tr)
Output Capacitance,
time related
-
63
-
Qg
Total Gate Charge
-
6.2
9.3
Qgs
Gate-Source Charge
-
2.1
-
Qgd
Gate-Drain Charge
-
2.2
-
td(on)
Turn-On Delay
tr
Rise Time
4
Td(off)
Turn-Off Delay
10
tf
Fall Time
4.5
VGS=0 V, VDS=400V, f =1 MHz
pF
VGS=0 V, VDS=0 V to 480 V
nC
VDS =100 V b , VGS= 0-4.5 V, ID = 5.5A
ns
VDS =480 V , VGS= 0-10 V, ID = 5.5 A,
RG= 2 Ω
7.5
Reverse operation
IS
Reverse Current
-
-
12
A
VSD
Reverse Voltage
-
2.3
2.9
V
VSD
Reverse Voltage
-
1.8
2.3
V
trr
Reverse Recovery Time
-
30
ns
Qrr
Reverse Recovery Charge
-
29
nC
VGS=0 V, TJ=100oC, Duty=5%,
>10kHz
VGS=0 V, IS=6A, TJ=25oC,
Duty=10, >10 kHz
VGS=0 V, IS=3A, TJ=25oC,
Duty=10%, >10 kHz
IS=5.5A, VDD=480 V, di/dt =450 A/s,
TJ=25oC
Notes
b: Qg does not change for VDS>100 V
December 2, 2013, DA
TPH3002PS
www.transphormusa.com
2
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