Data Sheet

D2
PA
K
BUK7609-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Low conduction losses due to low
on-state resistance
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 General purpose power switching
 Automotive systems
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
55
V
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
-
-
75
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
211
W
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 10;
see Figure 11
-
-
18
mΩ
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 10;
see Figure 11
-
7.7
9
mΩ
[1]
Static characteristics
RDSon
drain-source
on-state
resistance
BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
Table 1.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max Unit
-
-
400
mJ
-
25
-
nC
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ≤ 55 V;
drain-source
RGS = 50 Ω; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
[1]
gate-drain charge VGS = 0 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 12
Continuous current is limited by package.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
Simplified outline
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
mbb076
S
2
1
3
SOT404 (D2PAK)
[1]
It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
BUK7609-55A
BUK7609-55A
Product data sheet
Package
Name
Description
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
Version
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
55
V
VGS
gate-source voltage
ID
drain current
-20
20
V
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
[1]
-
75
A
[2]
-
108
A
Tmb = 100 °C; VGS = 10 V; see Figure 1
[1]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
-
433
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
211
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
[2]
-
108
A
[1]
-
75
A
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
433
A
ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
400
mJ
Source-drain diode
source current
IS
Tmb = 25 °C
peak source current
ISM
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
Continuous current is limited by package.
[2]
Current is limited by power dissipation chip rating.
03nj22
120
ID
(A)
Pder
(%)
Capped at 75 A due to package
80
80
40
40
0
0
0
50
100
03na19
120
150
200
0
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
BUK7609-55A
Product data sheet
50
100
150
200
Tmb (°C)
Tmb (°C)
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nj20
103
ID
(A)
tp = 10 μs
Limit RDSon = VDS/ID
102
100 μs
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
10−1
1
102
10
VDS (V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
see Figure 4
-
-
0.71
K/W
Rth(j-a)
thermal resistance from
junction to ambient
minimum footprint; mounted on
printed-circuit board
-
50
-
K/W
03nj21
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
single shot
10−3
10−6
10−5
10−4
10−3
10−2
10−1
1
tp (s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7609-55A
Product data sheet
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Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
55
-
-
V
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
50
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
4.4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
1
-
-
V
-
500
µA
IDSS
drain leakage current
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
0.05
10
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 10; see Figure 11
-
-
18
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 10; see Figure 11
-
7.7
9
mΩ
ID = 25 A; VDS = 44 V; VGS = 0 V;
Tj = 25 °C; see Figure 12
-
62
-
nC
-
12
-
nC
-
25
-
nC
-
2453
3271
pF
-
540
662
pF
-
299
427
pF
-
17
-
ns
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
tr
rise time
-
58
-
ns
td(off)
turn-off delay time
-
78
-
ns
tf
fall time
-
55
-
ns
LD
internal drain
inductance
from upper edge of drain mounting base
to centre of die ; Tj = 25 °C
-
2.5
-
nH
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C
-
4.5
-
nH
from source lead to source bond pad;
Tj = 25 °C
-
7.5
-
nH
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
-
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
-
55
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
-
43
-
nC
BUK7609-55A
Product data sheet
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Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nj17
400
03nj16
12
label is VGS (V)
ID
(A)
14
20
300
RDSon
(mΩ)
12
10
9.5
9
8.5
10
8
200
7.5
7
8
6.5
100
6
0
0
2
4
5.5
5
4.5
6
6
8
10
5
10
15
VDS (V)
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
03nj14
60
20
VGS (V)
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
03nj15
100
ID
(A)
gfs
(S)
75
40
50
20
25
Tj = 175 °C
0
0
20
40
0
60
0
Forward transconductance as a function of
drain current; typical values
BUK7609-55A
Product data sheet
4
6
8
VGS (V)
ID (A)
Fig 7.
2
Tj = 25 °C
Fig 8.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa32
5
03nj18
20
label is VGS (V)
VGS(th)
(V)
4
6
RDSon
(mΩ)
max
6.5
7
7.5
8
9
10
15
3
typ
20
2
min
10
1
0
−60
Fig 9.
5
0
60
120
0
180
100
200
300
Gate-source threshold voltage as a function of
junction temperature
03ne89
2
400
ID (A)
Tj (°C)
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
03nj13
10
VGS
(V)
a
8
1.5
VDD = 14 V
VDD = 44 V
6
1
4
0.5
2
0
-60
0
0
60
120
Tj (°C)
180
Product data sheet
20
40
60
80
QG (nC)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7609-55A
0
Fig 12. Gate-source voltage as a function of gate
charge; typical values
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Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nj19
5000
Ciss
C
(pF)
3750
2500
03nj12
100
IS
(A)
Coss
75
Crss
50
Tj = 175 °C
Tj = 25 °C
1250
0
10−2
25
10−1
1
102
10
0
0.0
VDS (V)
Product data sheet
0.6
0.9
1.2
VSD (V)
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7609-55A
0.3
Fig 14. Reverse diode current as a function of reverse
diode voltage; typical values
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BUK7609-55A
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N-channel TrenchMOS standard level FET
7. Package outline
SOT404
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
SOT404
Fig 15. Package outline SOT404 (D2PAK)
BUK7609-55A
Product data sheet
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Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7609-55A v.2
20110202
Product data sheet
-
BUK75_7609_55A v.1
Modifications:
BUK75_7609_55A v.1
BUK7609-55A
Product data sheet
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7609-55A separated from data sheet BUK75_7609_55A v.1.
20020806
Product specification
-
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
-
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BUK7609-55A
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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BUK7609-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
9.4
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK7609-55A
Product data sheet
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Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK7609-55A
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N-channel TrenchMOS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 February 2011
Document identifier: BUK7609-55A