datasheet

SKiiP 603 GD123-3DUW V3
Absolute Maximum Ratings
Symbol
Ts = 25°C unless otherwise specified
Conditions
Values
Unit
V
System
SKiiP® 3
VCC 1)
Operating DC link voltage
900
Visol
DC, t = 1 s, main terminals to heat sink
4300
V
It(RMS)
per AC terminal, Tterminal <115°C
400
A
IFSM
Tj = 150 °C, tp = 10 ms, sin 180°
3500
A
I²t
Tj = 150 °C, tp = 10 ms, diode
61
kA²s
fout
fundamental output frequency
1
kHz
Tstg
storage temperature
-40 ... 85
°C
IGBT
VCES
IC
SKiiP 603 GD123-3DUW V3
SKiiP technology inside
Trench IGBTs
CAL HD diode technology
DC-Link voltage monitoring
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
UL recognized File no. E63532
Typical Applications*
•
•
•
•
Tj = 150 °C
1200
V
Ts = 25 °C
627
A
Ts = 70 °C
484
A
ICnom
Tj 2)
junction temperature
600
A
-40 ... 150
°C
Diode
Features
•
•
•
•
•
•
•
•
Tj = 25 °C
Renewable energies
Traction
Elevators
Industrial drives
VRRM
IF
1)
With assembly of suitable MKP capacitor
per terminal
Tj = 150 °C
1200
V
Ts = 25 °C
508
A
Ts = 70 °C
386
A
IFnom
Tj
junction temperature
470
A
-40 ... 150
°C
V
Driver
Vs
power supply
13 ... 30
ViH
input signal voltage (high)
15 + 0.3
V
VisolPD
QPD <= 10pC, PRIM to POWER
1170
V
dv/dt
secondary to primary side
75
kV/µs
fsw
switching frequency
15
kHz
Characteristics
Symbol
Footnotes
Tj = 25 °C
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.7
2.1
V
Tj = 125 °C
1.9
Tj = 25 °C
0.90
1.10
V
Tj = 125 °C
0.80
1.00
V
Tj = 25 °C
2.6
3.3
mΩ
Tj = 125 °C
3.7
4.4
mΩ
VCC = 600 V
110
mJ
VCC = 900 V
195
mJ
IGBT
VCE(sat)
IC = 300 A
at terminal
VCE0
rCE
Eon + Eoff
at terminal
IC = 300 A
Tj = 125 °C
V
Rth(j-s)
per IGBT switch
0.051
K/W
Rth(j-r)
per IGBT switch
0.048
K/W
S33
© by SEMIKRON
Rev. 0 – 10.03.2014
1
SKiiP 603 GD123-3DUW V3
Characteristics
Symbol
Ts = 25°C unless otherwise specified
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.50
1.80
V
Tj = 125 °C
1.50
Tj = 25 °C
0.9
1.10
V
Tj = 125 °C
0.7
0.90
V
Tj = 25 °C
2
2.3
mΩ
Tj = 125 °C
2.7
3
mΩ
VR = 600 V
21
mJ
VR = 900 V
28
mJ
Diode
VF = VEC
IF = 300 A
at terminal
VF0
rF
SKiiP® 3
Err
at terminal
IF = 300 A
Tj = 125 °C
V
Rth(j-s)
per diode switch
0.1
K/W
Rth(j-r)
per diode switch
0.126
K/W
Driver
Vs
supply voltage non stabilized
IS0
bias current @Vs=24V, fsw = 0, IAC = 0
Features
Is
k1 = 42 mA/kHz, k2 = 0.00211 mA/A2
VIT+
input threshold voltage (HIGH)
•
•
•
•
•
•
•
•
VIT-
input threshold voltage (LOW)
RIN
input resistance
CIN
input capacitance
tpRESET
error memory reset time
tTD
top / bottom switch interlock time
tjitter
jitter clock time
tSIS
short pulse suppression time
ITRIPSC
over current trip level
735
Ttrip
over temperature trip level
110
VDCtrip
over voltage trip level,
input-output
turn-on
VCC = 900 V
propagation time
IC = 300 A
input-output
Tj = 25 °C
turn-off
propagation time
SKiiP 603 GD123-3DUW V3
SKiiP technology inside
Trench IGBTs
CAL HD diode technology
DC-Link voltage monitoring
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
UL recognized File no. E63532
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
Footnotes
1)
With assembly of suitable MKP capacitor
per terminal
td(on)IO
td(off)IO
System
13
24
30
420
= 420
V
mA
+ k1* fsw
+ k2 * IAC2
12.3
mA
V
4.6
10
V
kΩ
1
nF
0.0122
ms
3
µs
125
ns
0.625
0.7
µs
750
765
APEAK
115
120
°C
900
V
1.4
µs
1.4
µs
RCC'+EE'
flow rate=8l/min, TFluid=50°C, water/
glycol ratio 50%:50%
terminals to chip, Ts = 25 °C
0.5
mΩ
LCE
commutation inductance
12
nH
CCHC
per phase, AC-side
1.7
nF
ICES + IRD
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Mdc
DC terminals, SI Units
6
Mac
AC terminals, SI Units
13
w
SKiiP System w/o heat sink
2.4
kg
wh
heat sink
5.2
kg
Rth(r-a)
0.011
1.2
K/W
mA
8
Nm
15
Nm
S33
2
Rev. 0 – 10.03.2014
© by SEMIKRON
SKiiP 603 GD123-3DUW V3
© by SEMIKRON
Rev. 0 – 10.03.2014
3
SKiiP 603 GD123-3DUW V3
Fig. 1: Typical IGBT output characteristic
Fig. 2: Typical diode output characteristics
Fig. 3: Typical energy losses E = f(Ic, Vcc)
Fig. 4: Typical energy losses E = f(Ic, Vcc)
Fig. 5: Pressure drop Δp versus flow rate V
Fig. 6: Transient thermal impedance Zth(j-r)
4
Rev. 0 – 10.03.2014
© by SEMIKRON
SKiiP 603 GD123-3DUW V3
Fig. 7: Transient thermal impedance Zth(r-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(r-a) versus flow rate V
© by SEMIKRON
Rev. 0 – 10.03.2014
5
SKiiP 603 GD123-3DUW V3
Heat sink
6
Rev. 0 – 10.03.2014
© by SEMIKRON
SKiiP 603 GD123-3DUW V3
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 10.03.2014
7
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