SKiiP 1814 GB17E4-3DUL Absolute Maximum Ratings Symbol Conditions Values Unit V System SKiiP® 4 2-pack-integrated intelligent Power System VCC 1) Operating DC link voltage 1300 Visol DC, t = 1 s, each polarity 5600 V It(RMS) per AC terminal, rms, sinusoidal current 500 A Imax (peak) max. peak current of power section 2700 A IFSM Tj = 175 °C, tp = 10 ms, sin 180° 11907 A I²t Tj = 175 °C, tp = 10 ms, diode 709 kA²s fout fundamental output frequency (sinusoidal) 1 kHz Tstg storage temperature -40 ... 85 °C IGBT VCES IC SKiiP 1814 GB17E4-3DUL Tj = 175 °C 1700 V Ts = 25 °C 2547 A Ts = 70 °C 2049 A ICnom Tj 2) junction temperature 1800 A -40 ... 175 °C Diode Features • Intelligent Power Module • Integrated current and temperature measurement • Integrated DC-link measurement • Solder free power section • IGBT4 and CAL4F technology • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL recognition in progress, file no. E242581 Typical Applications* • • • • Tj = 25 °C Renewable energies Traction Elevators Industrial drives Remarks VRRM IF Tj = 175 °C 1700 V Ts = 25 °C 1771 A Ts = 70 °C 1401 A 1800 A -40 ... 175 °C 19.2 ... 28.8 V IFnom Tj 2) junction temperature Driver Vs power supply ViH input signal voltage (high) Vs + 0.3 V dv/dt secondary to primary side 75 kV/µs fsw switching frequency 15 kHz Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 2.12 2.43 V IGBT VCE(sat) IC = 1800 A at terminal VCE0 For further information please refer to SKiiP®4 Technical Explanation rCE Footnote Eon + Eoff 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop can be >150°C for a maximum of 1000 cum. operation hours Tj = 25 °C at terminal IC = 1800 A Tj = 150 °C Tj = 150 °C 2.53 2.79 V Tj = 25 °C 1.10 1.20 V Tj = 150 °C 1.00 1.10 V Tj = 25 °C 0.57 0.69 mΩ 0.94 mΩ Tj = 150 °C 0.85 VCC = 900 V 1335 VCC = 1300 V 2130 mJ mJ Rth(j-s) per IGBT switch 0.0183 K/W Rth(j-r) per IGBT switch 0.011 K/W S34 © by SEMIKRON Rev. 1.0 – 30.07.2015 1 SKiiP 1814 GB17E4-3DUL Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 2.02 2.34 V Tj = 150 °C 2.27 2.62 V Tj = 25 °C 1.21 1.36 V Tj = 150 °C 0.99 1.12 V Tj = 25 °C 0.45 0.55 mΩ Tj = 150 °C 0.71 0.84 mΩ VR = 900 V 309 mJ VR = 1300 V 498 mJ Diode VF = VEC IF = 1800 A at terminal VF0 rF SKiiP® 4 at terminal Err 2-pack-integrated intelligent Power System SKiiP 1814 GB17E4-3DUL IF = 1800 A Tj = 150 °C Rth(j-s) per diode switch 0.0375 K/W Rth(j-r) per diode switch 0.024 K/W Driver Vs supply voltage non stabilized IS0 VIT+ bias current @Vs= 24V, fsw = 0, IAC = 0 k1 = 32 mA/kHz, k2 = 0.227 mA/A, fout =50Hz, sinusoidal current input threshold voltage (HIGH) VIT- Input threshold voltage (LOW) RIN input resistance CIN input capacitance tpRESET error memory reset time Is Features 19.2 24 28.8 330 = 330 V mA + k1* fsw + k2 * IAC 0,7*Vs mA V 0,3*Vs V • Intelligent Power Module • Integrated current and temperature measurement • Integrated DC-link measurement • Solder free power section • IGBT4 and CAL4F technology • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL recognition in progress, file no. E242581 tpReset(OCP) Over current reset time, FRT-function can be activated via CAN interface tTD top / bottom switch interlock time 3 tjitter jitter clock time 52 tSIS short pulse suppression time 0.6 µs tPOR Power-On-Reset completed 3.5 s Idigiout digital output sink current (HALT-signal) Typical Applications* Vit+ HALT input threshold voltage HIGH HALT (Low -->High) Vit-HALT input threshold voltage LOW HALT (High --> Low) td(err) Error delay time (from detection to HALT), (depends on kind of error) ITRIPSC over current trip level • • • • Renewable energies Traction Elevators Industrial drives Remarks For further information please refer to SKiiP®4 Technical Explanation Footnote 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop can be >150°C for a maximum of 1000 cum. operation hours 13 kΩ 1 nF 1300 2900 ms µs µs 58 16 0,6*Vs 2645 mA V 1.8 ILL ns 2700 0.4*Vs V 170 µs 2755 n.a. APEAK APEAK Ttrip over temperature trip level 128 135 142 °C TDriverTrip over temperature PCB trip level 113 120 124 °C VDCtrip over voltage trip level, can be deactivated via CAN interface, 1300 1340 1380 V VDCtripLL n.a. V S34 2 Rev. 1.0 – 30.07.2015 © by SEMIKRON SKiiP 1814 GB17E4-3DUL Characteristics Symbol Conditions System µs 9 kV/µs IC = 1800 A 2 kV/µs 9 kV/µs RCC'+EE' IC = 1800 A flow rate = 570 m³/h, Ta=25°C, 500m above sea level terminals to chip, Ts = 25 °C LCE commutation inductance CCHC coupling capacitance secondary to heat sink Cps coupling capacitance primary to secondary ICES + IRD VGE = 0 V, VCE = 1700 V, Tj = 25 °C Mdc DC terminals 6 Mac AC terminals 13 w SKiiP System w/o heat sink 2.48 kg wh heat sink 6.25 kg dVCE/dtoff SKiiP 1814 GB17E4-3DUL Features • Intelligent Power Module • Integrated current and temperature measurement • Integrated DC-link measurement • Solder free power section • IGBT4 and CAL4F technology • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL recognition in progress, file no. E242581 Unit 2.6 dVCE/dton 2-pack-integrated intelligent Power System max. µs td(off)IO SKiiP 4 turn on propagation delay time turn off propagation delay time IC = 0 A typ. 2.8 td(on)IO ® min. Rth(s-a) VCC = 1300 V IC = 1800 A Tj = 25 °C Tj = 25 °C VCC = 1300 V 0.0254 K/W 0.09 mΩ 6 nH 4.8 nF 0.067 nF 0.211 mA 8 Nm 15 Nm Typical Applications* • • • • Renewable energies Traction Elevators Industrial drives Remarks For further information please refer to SKiiP®4 Technical Explanation Footnote 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop can be >150°C for a maximum of 1000 cum. operation hours S34 © by SEMIKRON Rev. 1.0 – 30.07.2015 3 SKiiP 1814 GB17E4-3DUL 4 Rev. 1.0 – 30.07.2015 © by SEMIKRON SKiiP 1814 GB17E4-3DUL Fig. 1: Typical IGBT output characteristics Fig. 2: Typical diode output characteristics Fig. 3: Typical switching energy E = f(Ic) Fig. 4: Typical switching energy E = f(Ic) Fig. 5: Transient thermal impedance Zth(j-s) Fig. 6: Transient thermal impedance Zth(j-r) © by SEMIKRON Rev. 1.0 – 30.07.2015 5 SKiiP 1814 GB17E4-3DUL Fig. 7: Transient thermal impedance Zth(s-a) Fig. 8: Coefficients of thermal impedances Fig. 9: Thermal resistance Rth(s-a) versus flow rate V Fig. 10: Pressure drop Δp versus flow rate V 6 Rev. 1.0 – 30.07.2015 © by SEMIKRON SKiiP 1814 GB17E4-3DUL System This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 30.07.2015 7