Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD9930
Power MOSFET
DUAL N & P-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UD9930 is a dual N & P-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with a
minimum on-state resistance, high switching speed, low gate chare.
The UTC UD9930 is suitable for DC/DC converters and LCD
monitor inverter.

FEATURES
* N-channel: RDS(on) < 40 mΩ @ VGS=10V, ID=5A
* P-channel: RDS(on) < 60 mΩ @ VGS=-10V, ID=-4A
* High switching speed
* Low gate chare

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
UD9930G-S08-R
SOP-8
1
2
3
Pin Assignment
4
5
6
7
8
Packing
N1G N1D/P1D N1S/N2S N2G P2G N2D/P2D P1S/P2S P1G Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R211-030.A
UD9930

Power MOSFET
MARKING
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www.unisonic.com.tw
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QW-R211-030.A
UD9930

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
RATINGS
UNIT
N-CHANNEL P-CHANNEL
Drain to Source Voltage
VDSS
30
-30
V
Gate to Source Voltage
VGSS
±25
±25
TA=25°C
5.5
-4.1
ID
Drain Current (Note 3)
Continuous
A
TA=70°C
4.4
-3.3
Drain Current (Note 1)
Pulsed
IDM
20
-20
Total Power Dissipation @TA=25°C
PD
1.38
W
Linear Derating Factor
0.01
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
SYMBOL
θJA
RATINGS
90
UNIT
°C/W
N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250µA
Breakdown Voltage Temperature
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
Coefficient
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0 V, TJ=25°C
Gate-Source Leakage
Forward
VGS=25V, VDS=0V
IGSS
Current
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-state Resistance
VGS=10V, ID=5A
RDS(ON)
(Note 2)
VGS=4.5V, ID=3A
Forward Transconductance
gFS
VDS=10V, ID=5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VDS=15V, VGS=4.5V, ID=5A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=15V, ID=1A,VGS=10V,
Rise Time
tR
RG=6Ω, RD=15Ω,
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.2A, VGS=0V
(Note 2)
Body Diode Reverse Recovery Time
tRR
IS=1.7A, VGS=0V,
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
30
UNIT
V
0.04
V/°C
1
+100
-100
µA
nA
nA
3.0
40
60
5.2
V
mΩ
mΩ
S
540
185
95
pF
pF
pF
36
8
10
26
52
176
80
nC
nC
nC
ns
ns
ns
ns
1.0
1.2
450
500
V
ns
nC
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QW-R211-030.A
UD9930

Power MOSFET
P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-30
V
Breakdown Voltage Temperature
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.04
V/°C
Coefficient
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0 V, TJ=25°C
-1
µA
Gate-Source Leakage
Forward
VGS=25V, VDS=0V
+100
nA
IGSS
Current
VGS=-25V, VDS=0V
Reverse
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1.0
-3.0
V
Drain-Source On-state Resistance
VGS=-10V, ID=-4A
60
mΩ
RDS(ON)
(Note 2)
VGS=-4.5V, ID=-2A
100
mΩ
Forward Transconductance
gFS
VDS=-10V, ID=-5A
4.8
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
750
pF
VDS=-25V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
720
pF
360
pF
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
37
nC
VDS=-15V, VGS=-4.5V, ID=-5A
Gate to Source Charge
QGS
11
nC
12
nC
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
36
ns
Rise Time
tR
75
ns
VDS=-15V, ID=-1A,VGS=-10V,
RG=6Ω, RD=15Ω,
Turn-OFF Delay Time
tD(OFF)
176
ns
Fall-Time
tF
88
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1.2A, VGS=0V
-1.2
V
(Note 2)
Body Diode Reverse Recovery Time
tRR
255
ns
IS=-1.7A, VGS=0V,
Body Diode Reverse Recovery
dIF/dt =-100A/μs
QRR
280
nC
Charge
Notes: 1. Pulse width limited by Max. Junction temperature
2. Pulse width ≤300us, duty cycle ≤2%
3. Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10sec; 186℃/W when mounted on Min. copper pad
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www.unisonic.com.tw
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QW-R211-030.A
UD9930

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
N-Channel
P-Channel
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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