Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT60N10M
Preliminary
POWER MOSFET
60A, 100V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UTT60N10M is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with high switching speed, a extremely low RDS(ON) and low gate
charge.
The UTC UTT60N10M is suitable for high frequency Point
-of-Load Synchronous, Networking DC-DC System, CCFL
Back-light Inverter, etc.

FEATURES
* RDS(ON) <16mΩ @ VGS=10V, ID=30A
* Green Device Available
* Low Gate Charge
* Surface mount package


SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT60N10ML-TM3-R
UTT60N10MG-TM3-R
TO-251
UTT60N10MG-S08-R
SOP-8
UTT60N10MG-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1
G
S
S
2
D
S
S
Pin Assignment
3 4 5 6
S - - S G D D
S G D D
7
D
D
8
D
D
Packing
Tube
Tape Reel
Tape Reel
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
Preliminary
POWER MOSFET
MARKING
Package
Marking
TO-251
SOP-8
DFN-8(5×6)
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
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified)
PARAMETER
RATINGS
UNIT
100
V
±20
V
TC=25°C
60
A
Continuous
ID
Drain Current
TC=100°C
36
A
100
A
Pulsed (Note 2)
IDM
Avalanche Current
IAS
22.6
A
Avalanche Energy (Note 3)
EAS
126
mJ
TO-251
60
W
SOP-8
Power Dissipation
TC=25°C
PD
7
W
DFN-8(5×6)
88
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, VDD=25V, VGS=10V, L=1mH, IAS=15.9A
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
TO-251
Junction to Ambient
Steady state
SOP-8
θJA
DFN-8(5×6)
TO-251
SOP-8
Junction to Case
Steady state
θJC
DFN-8(5×6)
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2 oz copper.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
90
40.3
2.08
17.86
1.4
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
MIN
ID=250µA, VGS=0V
VDS=100V, VGS=0V,Tj=25°C
VDS=80V, VGS=0V,Tj=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VGS=4.5V, ID=15A
1.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=30V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
IG= 100μA (Note1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time (Note 1)
tD(ON)
Rise Time
tR
VDS=50V, VGS=10V, ID=0.5A,
RG=25Ω (Note1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Forward On Voltage (Note 1)
VSD
IS=60A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=30A, VGS=0V,
dI/dt=100A/μs
Reverse Recovery Charge
Qrr
TYP
15
17
MAX
UNIT
1
5
+100
-100
V
µA
µA
nA
nA
3.0
16
20
V
mΩ
mΩ
4460
255
160
1.5
pF
pF
pF
Ω
132
11
17
88
82
1160
252
nC
nC
nC
ns
ns
ns
ns
60
1.2
100
210
A
V
ns
nC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
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www.unisonic.com.tw
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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