Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BSS123
Preliminary
Power MOSFET
170mA, 100V N-CHANNEL
POWER MOSFET

3
DESCRIPTION
The UTC BSS123 is an N-channel mode Power MOSFET, it
uses UTC’s advanced technology to provide the customers with low
CRSS.
The UTC BSS123 is suitable for Automotive and Other
Applications Requiring.

2
1
SOT-23
(EIAJ SC-59)
FEATURES
* RDS(on) < 6.0Ω @ VGS=10V, ID=100mA
* Low CRSS

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

BSS123G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-133.a
BSS123

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Continuous
VGSS
±20
V
Gate-Source Voltage
Non-Repetitive
VGSM
±40
Vpk
Continuous (Note 1)
ID
0.17
A
Drain Current
Pulsed (Note 2)
IDM
0.68
A
TA=25°C (Note 3)
225
mW
Power Dissipation
PD
Derate above 25°C
1.8
mW/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
Junction to Ambient

RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=100V, VGS=0V, TJ=25°C
VDS=100V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
MIN TYP MAX UNIT
100
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=1mA
1.6
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=100mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VCC=30V, IC=0.28A, VGS=10V,
RGS=50Ω
Turn-OFF Delay Time
tD(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ID=0.34A, VGS=0V
Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
3. FR−5=1.0×0.75×0.062 in.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
15
µA
60
µA
±100 nA
2.6
6.0
V
Ω
20
9.0
4.0
pF
pF
pF
20
40
ns
ns
1.3
V
2 of 3
QW-R209-133.a
BSS123
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-133.a
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