Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS9110T
100 V, 1 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2004 May 06
2004 May 13
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
FEATURES
QUICK REFERENCE DATA
• SOT23 package
SYMBOL
• Low collector-emitter saturation voltage VCEsat
VCEO
collector-emitter voltage
−100
V
IC
collector current (DC)
−1
A
• Higher efficiency leading to less heat generation
ICM
repetitive peak collector
current
−3
A
APPLICATIONS
RCEsat
equivalent on-resistance
320
mΩ
• High collector current capability: IC and ICM
PARAMETER
MAX.
UNIT
• Major application segments
PINNING
– Automotive 42 V power
– Telecom infrastructure
PIN
– Industrial
DESCRIPTION
1
base
• DC-to-DC conversion
2
emitter
• Peripheral drivers
3
collector
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
handbook, halfpage
3
3
DESCRIPTION
1
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS8110T.
2
1
Top view
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS9110T
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
*U7
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS9110T
2004 May 13
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−120
V
VCEO
collector-emitter voltage
open base
−
−100
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−3
A
IB
base current (DC)
−
−300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Tamb ≤ 25 °C; note 2
−
480
mW
limited by Tj(max)
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
001aaa811
600
Ptot
(mW)
(1)
400
(2)
200
0
0
40
80
120
160
Tamb (°C)
(1) 1 cm2 collector mounting pad.
(2) Standard footprint.
Fig.2 Power derating curves.
2004 May 13
3
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
001aaa814
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
1 (10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on printed-circuit board; 1 cm2 collector mounting pad.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
4
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa813
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
5
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −80 V; IE = 0 A
−
−
−100
nA
VCB = −80 V; IE = 0 A; Tj = 150 °C
−
−
−50
μA
ICES
collector-emitter cut-off current
VCE = −80 V; VBE = 0 A
−
−
−100
nA
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0 A
−
−
−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
150
−
−
VCE = −5 V; IC = −250 mA
150
−
−
VCE = −5 V; IC = −500 mA; note 1
150
−
450
VCE = −5 V; IC = −1 A; note 1
125
−
−
IC = −250 mA; IB = −25 mA
−
−
−120
mV
IC = −500 mA; IB = −50 mA
−
−
−180
mV
IC = −1 A; IB = −100 mA; note 1
−
−
−320
mV
VCEsat
collector-emitter saturation voltage
RCEsat
equivalent on-resistance
IC = −1 A; IB = −100 mA; note 1
−
170
320
mΩ
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −100 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1
V
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A;
f = 1 MHz
−
−
17
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 May 13
6
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa376
600
(1)
hFE
001aaa377
−1.2
VBE
(V)
(1)
−0.8
400
(2)
(2)
(3)
−0.4
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
VCE = −10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Base-emitter voltage as a function of
collector current; typical values.
−1
001aaa380
DC current gain as a function of collector
current; typical values.
001aaa378
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−10−2
−10−1
−103
−104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Tamb = 25 °C.
(1) IC/IB = 50.
(2) IC/IB = 20.
Fig.7
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 May 13
7
−1
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa381
−10
001aaa379
−10
VBEsat
(V)
VBEsat
(V)
−1
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
−10−1
−10−1
−103
−104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
Tamb = 25 °C.
Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
001aaa382
103
001aaa383
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
(1)
(2)
(3)
1
1
(2)
10−1
−10−1
−1
−10
−102
10−1
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Tamb = 25 °C.
(1) IC/IB = 50.
(2) IC/IB = 20.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2004 May 13
8
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa384
−2
IB (mA) = −45
IC
−40.5
(A)
−36
−1.6
−31.5
−27
−1.2
−22.5
−18
−13.5
−9
−4.5
−0.8
−0.4
0
0
−1
−2
−3
−4
VCE (V)
−5
Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 45 mA.
IB = 40.5 mA.
IB = 36 mA.
IB = 31.5 mA.
(5)
(6)
(7)
(8)
IB = 27 mA.
IB = 22.5 mA.
IB = 18 mA.
IB = 13.5 mA.
(9) IB = 9 mA.
(10) IB = 4.5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2004 May 13
9
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 May 13
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
10
NXP Semiconductors
Product data sheet
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 May 13
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp12
Date of release: 2004 May 13
Document order number: 9397 750 13273
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