SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD SMF05C STANDARD CAPACITANCE TVS Features z z z z z z z SOT363 Small SOT-363 SMT Package Peak Power Dissipation 100W @8 x 20 us Pulse Low Leakage Current < 1uA @3 Volts Fast Response Time < 1 ns Low Capacitance ESD Protection to IEC 61000-4-2 Level 4 RoHS Compliant in Lead-Free Versions Applications z z z z Instrumentation Equipement Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Absolute Maximum Ratings Parameter Peak Power Dissipation (Note 1.) @TL = 25°C Maximum Junction Temperature Operating Junction Temperature Range Storage Temperature Range 1. 8 X 20 us, non–repetitive Figure 1. Symbol Value Units PPK 100 W TJmax 150 °C TJ -55 to 150 °C TSTG -55 to 150 °C SMF05C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Device SMF05C Marking VRWM (V) IR(uA) VBR (V) VC (V) Capacitance @ VRWM @ 1 mA @ 5A @ OV Bias(pF)(note 2) Max Max Min Nom Max Max Typ Max 5 5.0 6.1 6.6 7.2 9.8 -- 110 *Surge current waveform per Figure 1. 2. Capacitance of one diode at f=1MHz,VR=0V, TA=25°C． Fig1. Pulse Waveform SMF05C Fig2. Power Derating Package Dimensions