GPS Front-End Components for Mobile and Wireless Application

GPS front-end components for mobile and wireless application
[ www.infineon.com/GPS ]
Index
2
Introduction 3
Infineon’s GPS front-end expertise 4
RF MMICs BGM781N11 BGA715L7 BGA615L7 BGA461 5
6
7
8
9
RF transistors 10
Antenna ESD protection devices 12
Digital interface ESD protection devices 13
RF switches 14
Package information 15
Infineon technologies offers complete range of RF front-end
components for satellite-based global navigation systems
The architecture and the performance data of the so-called
RF front-end is the key contributor to fulfill strict requirements
of the GPS system, because it consists of the whole line-up
between the GPS antenna and the integrated GPS chipset.
The main challenges for the growing GPS-enabled mobile
phone market are to achieve high sensitivity and high
immunity against interference of cellular signals driven by
government regulations for safety and emergency reasons,
for example, in the US and Japan. This means reception for
GPS signals at very low power levels down to less than
Looking forward to 2011, the global GPS market is expected -160dBm in mobile phones has to be ensured indoors and
to grow with a compound annual growth rate (CAGR) of 38%. even in underground parking lots. In addition, excellent ESD
The underlying contributor to this growth is the GPS-enabled robustness characteristics and low power consumption for
mobile phone market (CAGR = 31%) and the market for GPS- long battery usage duration are mandatory features for
portable and mobile phones.
enabled digital cameras (CAGR = 207%).
Satellite-based navigation systems, in particular GPS
(global positioning system), are among the fastest growing
businesses in the semiconductor industry. According to the
market research company IMS Research, it is expected that
approximately 200 million GPS units was sold in 2008. The
most important market segments in 2008 are personal
navigation devices (PNDs, 15% of the worldwide GPS market)
and GPS-enabled mobile phones (79% of the worldwide
GPS market).
Infineon Technologies offers a complete product portfolio to all customers designing high-end flexible RF
Front-End solutions for GPS that includes:
Low noise amplifiers (LNA): consisting of a wide range of
products including cost-effective, high-end RF transistors
and MMICs (monolithic microwave integrated circuits)
n Front-End Module (FEM): LNAs and band-pass filters
integrated into a single small package
Transient voltage suppression (TVS) diodes: protecting
GPS antenna highly reliably up to 20kV
n RF Switches: allow for diversity architectures
n
n
Infineon’s latest GPS LNA BGA715L7 contributes to increased
battery lifetime with a very low power consumption of only
5.9mW, approximately 20% lower than with alternative
solutions which are available on the market. BGM781N11
including two band-pass filters and one LNA shows the most
compact GPS FE module in the market with excellent jammer
signal rejection.
following brochure. After reviewing the brochure, you will
find out how the level of receive sensitivity, the battery
lifetime, the level of ESD protection, and the flexibility of
your design can be tremendously boosted with Infineon’s
GPS products.
Before you start to design your next generation RF front-end
for GPS units, it will definitely be worth looking through the
Please visit Infineon’s RF & Protection Devices GPS
Web page to explore our front-end solutions for your GPSenabled products, at www.infineon.com/GPS. Ask your
local sales representative for your own design kit for GPS.
3
Infineon’s expertise in GPS front-end
Below is a general block diagram for GPS functionality in a
device. From the antenna looking into GPS receiver, the ESD
device protects the RF front-end against ESD hazards coming
from ANT when it makes contact with the external environment. In modern wireless handheld systems, 8 kV contact discharge ESD protection according to the IEC61001-4-2 standard is a minimum requirement to protect the system. Infineon’s low-capacitance TVS diodes provide excellent ESD
protection levels that are widely used to protect the pre-filter
in GPS systems today. After the pre-filter, a good low noise
amplifier (LNA) with high gain of 20db and low noise figure of
0.6dB is mandatory to amplify the very weak GPS signals from
satellites that arrive at the receiver’s antenna with power levels of the order of -130 to -160dBm. From widely used LNAs,
such as BGA615L7 and BFP640 to the newest LNAs BGA715L7
and BFP740F with the lowest noise figure of 0.6dB, Infineon
provides customers the best LNA choices to realize outstanding GPS receiver designs.
GPS Antenna
BPF1
LNA
BPF2
GPS Receiver
ESD
Protection
Highly integrated GPS front-end solutions include pre-filter
(BPF1), LNA and post-filter (BPF2) which enable customers
to realize compact GPS function in mobile and portable devices. The pre-filter protects the LNA from being overdriven
by jammer signals, e.g. cellular and WLAN transmit signals in
the same device or from devices nearby, improving receiver
blocking performance. The pre-filter’s attenuation of the
jammer signals also helps prevent undesired spurious signals
from being generated in the LNA, some of which may fall
directly on the desired GPS signal. The overall noise figure
is dominated by the insertion loss of pre-filter and the noise
figure of the LNA. The post-filter further reduces any jammer
4
signals that are present to provide additional protection to the
receiver from saturation.
In summary, highly integrated GPS front-end solutions offer
a well-optimized combination of low noise figure, high gain,
high power handling capability and excellent desense
characteristics to shorten the design cycle at the customer
side along with using an extremely small PCB area for mobile
and portable devices. Infineon enables customers to realize
total front-end GPS solutions with components from a
single supplier.
Highly integrated GPS low noise amplifiers
and front-end modules
Infineon Technologies is a market leader in
GPS LNAs and has good alignment with various
reference designs for GPS applications in PND
and cellular markets.
Infineon’s GPS LNA product portfolio consists
of a wide range of LNAs including MMICs,
front-end modules (FEMs), and RF transistors.
Using Infineon’s leading SiGe:C bipolar
transistors with integrated bias and matching,
MMICs provide for easy usage, reduced
external component count and short design
cycles to realize the GPS LNA function. The
front-end module integrates LNA and filters in
one single tiny package to provide solutions
with smaller form factor and well-optimized
performance in the GPS front-end for customers.
Infineon’s GPS LNA products have excellent
features including low noise figure, high gain,
high linearity, high levels of ESD protection and
low current consumption to fulfill customers’
needs to satisfy the increasing requirements
of GPS systems.
Customer benefits with Infineon’s GPS LNAs:
Best-in-class performance in key
parameters
n Broad portfolio for both high-end and
cost-effective solutions
n Leading high-volume supplier in RF
transistors and MMICs
Leading supplier in GPS
Complete solution provider for
GPS front-end
n Easy circuit & board design with
excellent technical support
n
n
n
Please visit www.infineon.com/rfmmic to find more information about Infineon’s MMICs for
GPS and other applications.
Product list and key parameters of GPS MMICs and Front-End Modules
Gain
(dB)
NF
(dB)
IP -1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
#
ext.
Application
note
Package
18.6
1.7
-15
-7
1.5…3.6
3.3
2
AN184
TSNP-11-2
BGA715L7
20
0.6
-15
-5
1.5...3.6
3.3
3
AN161
TSLP-7-1
BGA615L7
18
0.9
-13
-2
2.4...3.6
5.6
5
AN91, AN93
TSLP-7-1
BGA461
19
1.0
-14
-3
2.4...3.6
4.0
6
–
TSLP-7-4
20.2
1.1
-23
-6.8
1.5…3.6
6.0
6
TR120
TSLP-7-8
BGA622
15
1.0
-17
-2
1.5…3.6
6.0
5
AN86
SOT343
BGA622L7
18
1.0
-20
-4
1.5…3.6
6.0
5
AN90
TSLP-7-1
BGA428
21
1.3
-19
-9
2.4…3.6
8.2
4
AN62
SOT363
Product name
Front-end module
BGM781N11
MMICs
BGA628L7
Note:
Gain: power gain measured of the application circuit in 50Ω system
NF: noise figure
IP-1dB : input 1dB-compression point
IIP 3: input 3rd -order intermodulation point
#Ext: number of required external components used in the application circuit
5
Highly integrated GPS front-end module –
BGM781N11
The highly integrated BGM781N11 is the
world‘s smallest GPS front-end module. It
includes the pre-filter, LNA and post-filter in
one package with the measurements of
2.5 x 2.5 x 0.7mm³. The BGM781N11 gives
customers the smart solution to minimize
their form factor while offering a first class
combination of noise figure, gain, jammer
signal desense, and ESD protection. The
BGM781N11 is the perfect match to help
customers realize their GPS functions in
mobile phones, PNDs and active antenna
applications.
The BGM781N11 contains the pre-filter
that helps prevent the LNA from saturating
because of the strong jammer signals coming
from collocated cellular transceivers. The
high-gain SiGe LNA helps to reduce the
system noise figure and enhance the
sensitivity of the GPS system. And with the
post-filter, the BGM781N11 offers a signal
selectivity up to 90dBm for the purpose of
reducing the jammer signals to ensure GPS
reception in the worst conditions. Below is
the application circuit of BGM681L11 with
only two external components. Together
with the ESD diode at input, the module
has 8.0kV IEC ESD protection at the antenna
port, customers can easily achieve their system ESD requirements (usually 8.0kV) without additional ESD protection devices.
Key Parameters of BGM781N11 at DC and 1.575GHz
Product name
BGM781N11
Gain (dB)
NF
(dB)
IP -1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
#
ext.
Application
note
Package
18.6
1.7
-15
-7
1.5…3.6
3.3
2
AN184
TSLP-11-2
Key Out-of-band Parameters of BGM781N11
Product name
Jammer signal selectivity (dBc)
900MHz
1,800MHz
2,400MHz
90
80
72
BGM781N11
IP 1dB1)
(dBm)
IIP 32)
(dBm)
20
47
Notes:
1) measured with 900, 1,800 or 2,400MHz jammer signal
2) measured with two tones of 0dBm at f1 = 1,713MHz and f2 = 1,851MHz.
BO1
AI
PON
BIAS
Power Gain of BGM681L11
VCC
20
10
0
BIAS
-10
-20
Pre-Filter
Post-Filter
RFin
LNA
-30
-40
-50
-60
BGM781N11
BG1
6
GND
-70
BG2
-80
0
0.5
1
1.5
2
2.5
3
3.5
Frequency [GHz]
4
4.5
5
5.5
6
Best-in-class LNA –
BGA715L7
Customers remark that the brand new BGA715L7 is “the
LOWEST low noise amplifier” on the market. The BGA715L7
sets a new milestone in the SiGe:C MMIC LNAs for GPS with
its lowest noise figure of 0.6dB. The design of the BGA715L7
shows Infineon’s deep know-how in MMIC designs, utilizing
our world class low noise SiGe:C bipolar technology.
The BGA715L7 builds on its successful predecessor, the
BGA615L7, and uses the same package and pin definition to
enable our customers to drop the BGA715L7 into their current
design with minor changes to the application circuit for better
performance and lower power consumption. An improved
biasing network makes the BGA715L7 work with a wide
voltage supply range from 1.5 to 3.6V while maintaining a
stable constant current consumption of 3.3mA over
temperature. The output is 50Ω matched with an integrated
DC blocking capacitor, and the BGA715L7 requires only four
external components. Because of these features and with its
20dB of gain, the BGA715L7 makes the ideal solution for
customers to reach the best-in-class performance in GPS.
Key parameters of BGA715L7 at DC and 1.575GHz
Product name
Gain (dB)
NF (dB)
IP -1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
# ext.
Application
note
Package
20
0.6
-15
-5
1.5...3.6
3.3
3
AN161
TSLP-7-1
BGA715L7
N1 BGA715L7
C2
RFin
RFout
AO, 6
AI, 1
L1
VCC
VCC, 5
BIAS, 2
C1
C3
optional
PON, 4
GND, 3
PON
VSS, 7
Supply current ICC = f(TA)
Power Gain |S21|2 = f(f),
Noise figure NF = f(f)
VCC = parameter in V
VCC = 1.8V, PON = 1.8V, TA = 25°C
VCC = 1.8V, PON = 1.8V, TA = 25°C
25
3.8
1.6
20
3.7
1.4
Appl.2
15
3.5
3.4
3.3
3.6 V
2.8 V
Appl.1
5
Appl.2
0
-5
1.5 V
1
0.8
Appl.1
0.6
-10
3.2
0.4
-15
3.1
3
−40
1.2
10
NF [dB]
|S21|2 [dB]
ICC [mA]
3.6
0.2
-20
−15
10
TA [°C]
35
60
85
-25
0
0.5
1
1.5
2
Frequency [GHz]
2.5
3
0
1.3
1.4
1.5
1.6
1.7
1.8
Frequency [GHz]
7
Best seller in the GPS world –
BGA615L7
GPS applications. The BGA615L7 includes a cascade stage to
boost the high gain and low noise figure. The active biasing
circuit stabilizes its characteristics over voltage and temperature and enables on/off control. The output is 50Ω internally matched with integrated DC block which reduces the design effort and eases implementation into GPS receivers.
BGA615L7 has been the best-selling LNA in the GPS market
for many years. This widely designed-in GPS LNA at our customers shows a well-defined balance among gain of 18dB,
noise figure of 0.9dB and linearity performance so that it is
the optimal choice for portable navigation devices, e.g. PNDs
and PMPs (personal multimedia players) as well as for mobile
Key Parameters of BGA615L7 at DC and 1.575GHz
Product name
BGA615L7
Gain (dB)
NF (dB)
IP -1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
# ext.
Application
note
Package
18
0.9
-13
-2
2.4...3.6
5.6
5
AN91
AN93
TSLP-7-1
C2
N1 BGA615L7
RFin
RFout
AI, 1
L2
VCC, 5
BIAS, 2
VCC
C4
PON, 4
GND, 3
L1
PON
VSS, 7
C3
6.5
1.5
6.3
1.4
19
6.1
1.3
18.5
5.9
1.2
18
5.7
1.1
17.5
17
NF [dB]
20
19.5
ICC [mA]
IS21 I2[dB]
C1
5.5
5.3
1
0.9
16.5
5.1
0.8
16
4.9
0.7
15.5
4.7
0.6
15
−40
−20
0
20
40
TA [°C]
8
C5
60
80
100
4.5
−40
−20
0
20
40
TA [°C]
60
80
100
0.5
−40
−20
0
20
40
TA [°C]
60
80
100
Excellent performance/price ratio – BGA461
The BGA461 is one of the most attractive GPS
LNAs in the Infineon GPS portfolio since it
offers the best overall performance/price
ratio. It offers a high gain of 20dB and low
noise figure of 1.0dB with only 4mA.
The BGA461 is based on our successful
BGA615L7 LNA, and it uses the same pin
definition as BGA615L7. The package differs
by having bigger pads giving it a pin pitch of
500µm making it easy-to-handle for custom-
ers that want to reduce risk in their assembly lines. The BGA461 features an external
biasing resistor enabling customers to tune
the current in the range of 3 to 6mA to have the
best combination of the power consumption
and linearity for their applications. The output
is 50Ω matched with an integrated DC block
and the input is easily matched with three
external components.
Key Parameters of BGA461 at DC and 1.575GHz
Product name
Gain (dB)
NF (dB)
IP -1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
#
ext.
Application
note
Package
19
1.0
-14
-3
2.4...3.6
4.0
6
–
TSLP-7-4
BGA461L7
BGA461
C2
RFin
IN,1
OUT,6
BIAS,2
VCC,5
RFout
L2
L1
VCC
C4
n.c.,3
R1
C1
GND,7
C5, optional
PON,4
PON
C3, optional
Supply current ICC = f(VCC)
Gain IS21I2= f(f)
Noise figure NF = f(f)
TA = 25 °C
VCC = 2.8 V
VCC = 2.8 V
4.5
IS21I2 [dB]
ICC [mA]
4
3.5
3
2.5
20
2
19
1.9
18
1.8
17
1.7
16
1.6
NF [dB]
5
15
1.4
13
1.3
12
1.2
11
2
2
2.5
3
VCC [V]
3.5
1.5
14
10
1.1
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Frequency [GHz]
2
1
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Frequency [GHz]
9
SiGe:C high-performance RF transistors
for GPS low noise amplifiers
The Infineon silicon-germanium-carbon
(SiGe:C) RF bipolar transistors in standard
SOT, flat-lead TSFP and leadless ultraminiature TSLP packages are excellent
choices for LNA in all kinds of GPS systems
such as those found in Active Antennas,
mobile phone/handheld devices or car
navigation units.
RF transistors offer an excellent trade-off
between the highest design flexibility, best
attainable RF performance and lowest cost.
Infineon Technologies provides many
ready-to-use application notes and
associated application boards for GPS
which take into account the market
requirements of modern GPS LNA designs
and leading GPS chipset providers.
Infineon Technologies looked carefully into factors like:
Number of external passive components
needed
n Linearity vs. current consumption
n
n
1.8V, 3V supply voltage flexibility –
only external resistor value change is
required
Click on www.infineon.com/rf.appnotes to find more information about Infineon RF
transistors for GPS and other wireless applications.
Product list and key parameters of GPS RF transistors
Gain (dB)
NF (dB)
IP-1dB
(dBm)
IIP 3
(dBm)
Supply
(V)
Current
(mA)
#
ext.
Application
note
BFP640
BFP640F
17.2
0.8
-16
-5.9
1.8 or 3
6.7
8
–
SOT343
TSFP-4
BFP640
BFP640F
18.5
0.9
-12.7
+6.1
1.8 or 3
8.6
10
AN121
SOT343
TSFP-4
BFP740
BFP740F
20
0.7
-20
-2
1.8 or 3
8
10
AN117
SOT343
TSFP-4
BFR740L3RH
19.5
0.7
-19.5
-1.5
1.8 or 3
8
10
–
TSLP-3-9
BFP720
BFP720F
21.5
0.8
-21
-11
1.8 or 3
6.0
9
–
SOT343
TSFP-4
BFP420
14.2
1.3
-16
4
2.75
5.0
9
AN155
SOT343
Product name
Package
Note:
Data taken at 25°C, f = 1,575MHz, Data for device on PC board, reference planes @ SMA connectors, e.g. PCB loss is NOT
subtracted for noise figure, power gain numbers. Results are at 1.8 V, 3 V on request or in application notes.
10
The picture left is the gain curve of BFP640F high linearity
GPS LNA. LNA has 18.5dB gain, 0.9dB noise figure,
and input third-order Intercept of +6dBm drawing 8mA
from either 1.8 or 3.0V. 10 external components are used.
Amplifier is unconditionally stable, e.g. k > 1, B1 > 0. For more
information please see application note AN121.
The picture left is the gain curve of BFP740F high Linearity
GPS LNA. LNA has 20dB gain, 0.7dB noise figure, drawing
9mA from a 1.8 volt supply. 1.8 or 3.0V operation is
possible with a single resistor value change. 10 external
elements are used. Amplifier is unconditionally stable,
e.g. k > 1, B1 > 0. For more information please see
application note AN117.
11
Best-in-class RF ESD protection devices for antenna
For any antenna exposed to the outside world, ESD is a
continuous threat to device reliability. For that reason it is
mandatory for the circuit elements placed right after the
antenna to be protected against ESD threats. Today, many
front-end technologies have built-in ESD protection which
was conceived to safeguard the semiconductor chip from
ESD events during manufacturing. However, overall ESD
robustness at system level can only be achieved via the use of
an external protection device.
When applied to high-frequency circuits, the parasitic
capacitance of the protection device must be kept at a minimum
in order to not interfere with the signal performance. In addition,
designers should choose devices providing appropriate
clamping voltage for the application. Infineon TVS diodes
overcome the ESD problem in RF antennas by providing outstanding clamping performance and ultralow capacitance in
a very small form factor. For detailed information and data
sheets please see www.infineon.com/rfantennaprotection.
Features and Benefits
Multi-strike ESD absorption capability exceeding IEC
61000-4-2 standard level 4
n Ultralow capacitance down to 0.2pF to minimize
“loading” of RF circuitry
Optimized devices with very low noise figure/loss
contribution
n Dedicated packages for space-constrained applications
n
n
key parameters of TVS diodes for RF antenna applications
Product name
ESD0P2RF-02LS
VRWM
[V]
ESD 1)
[kV]
I pp 3)
[A]
Vcl 4)
[V]
Loss 5)
[dB]
Return
loss 5)
[dB]
Noise
figure 5)
[dB]
C t 6)
[pF]
Application
note
Package
5.3
20
3
16
0.12
23
0.10
0.2 (1GHz)
AN167
TSSLP-2
ESD0P2RF-02LRH
5.3
20
3
16
0.13
23
0.11
0.2 (1GHz)
AN167
TSLP-2
ESD5V3U1U-02LS
5.3
20
3
12
0.22
19
0.16
0.4
–
TSSLP-2
ESD5V3U1U-02LRH
5.3
20
3
12
0.23
19
0.17
ESD1P0RFS
70
20
10
12
/
0.4
–
TSLP-2
1.0
AN103
SOT363
ESD1P0RFW
70
20
10
12
1.0
AN103
SOT323
ESD0P8RFL
50
20
10
12
0.44
11
0.08
0.8 (1GHz)
AN163
TSLP-4
ESD0P4RFL
50
15
5
6
0.17
18
0.06
0.4 (1GHz)
AN163
TSLP-4
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge
2) Electro-fast transient according to IEC61000-4-4 (5/50ns)
3) Maximum peak pulse current according to IEC61000-4-5 (8/20µs)
4) Clamping Voltage at Ipp_max
5) TA = 25°C, VR = 0V, f = 2GHz, ZS = ZL = 50Ω
6) Typical capacitance at 1MHz (unless specified), 0V
12
/
TVS diodes for ESD protection of
high-speed digital interfaces
The ESD5V3- and ESD3V3-diode series are
specially designed for the protection of ultrahigh-speed interfaces with data rates up to
8GBd and beyond. The main feature of these
products is their ultralow capacitance values
down to 0.4pF. This combined with improved
package features makes these devices ideal
to fulfill stringent signal quality requirements
at high-speed data transmission rates.
The bidirectional ESD8V0 diode series is
designed for use in a wide voltage range
from -8V to +14V. The key feature of this
series is its low leakage current of less
than 1nA, an important factor for batterypowered devices.
For detailed information and data sheets
please see www.infineon.com/highspeedinterfaces.
Features and Benefits
Superior ESD/transient absorption
capability beyond market standards
n Ultralow capacitance to minimize signal
attenuation/distortion at high fre quencies
n Very low clamping voltages to protect
ESD-sensitive IC/ASICs
n
Ultrasmall form factor and thinnest
package designs
n Leakage current of less than 1nA for
long battery lifetime in portable
devices
n Optimized flow-through array designs
for easy trace routing
n
key parameters of TVS diodes for high-speed digital interfaces
Product name
VRWM
[V]
ESD 1)
[kV]
Ipp,max 3)
[A]
Vc 4)
[V]
VFC 4)
[V]
I R 5)
[nA]
C t 6)
[pF]
Application
note
Package
ESD8V0L1B-02LRH
-8/14
25
2.5
26
20
<1
8.5
AN100
TSLP-2-17
ESD8V0L2B-03L
-8/14
15
1
26
20
<1
4
AN100
TSLP-3-1
ESD8V0R1B-02LRH
-8/14
14
1
23
17
<1
4
AN140
TSLP-2-17
ESD8V0R1B-02LS
-8/14
14
1
23
17
<1
4
AN140
TSSLP-2-1
ESD5V3U1U-02LS
5.3
20
3
12
4
<10
0.4
AN140
TSSLP-2-1
ESD5V3U1U-02LRH
5.3
20
3
12
4
<10
0.4
AN140
TSLP-2-7
ESD3V3U1U-02LS
3.3
20
3
12
4
<1
0.4
AN140
TSSLP-2-1
ESD3V3U1U-02LRH
3.3
20
3
12
4
<1
0.4
AN140
TSLP-2-7
ESD5V3U2U-03LRH
5.3
20
3
12
4
<1
0.4
–
TSLP-3-7
ESD5V3U2U-03F
5.3
20
3
12
4
<1
0.4
–
TSFP-3
ESD5V3U4RRS
5.3
15
3
12
4
<10
0.4
–
SOT363
ESD5V3U4U-HDMI
5.3
20
3
12
4
<1
0.4
–
TSLP-9
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge
2) Peak pulse current according to IEC61000-4-5 (8/20µs)
3) Clamping voltage or forward clamping voltage at Ipp_max
4) Leakage current at VRWM (maximum reverse working voltage)
5) Typical capacitance at 1MHz, 0V
13
Low insertion loss CMOS switch for
external antenna connection – BGS12A
The BGS12A is a general-purpose singlepole, double-throw (SPDT) RF CMOS
switch. With its insertion loss of only
0.4dB at 1.5GHz it is ideally suited for
GPS applications.
Manufactured using a unique variant of
an industry-standard RF-CMOS technology,
this switch does not require external DCblocking capacitors, and the control logic
is fully integrated onto one single die. The
BGS12A has the same level of performance
in terms of insertion loss, isolation and
harmonic generation in comparison with
other switches manufactured in GaAs tecnnology, while requiring less printed circuit
board area and having a better cost position.
All interfaces are protected against ESD to at
least 1.0kV HBM (human body model).
Customer advantages with Infineon’s BGS12A:
n
n
n
n
n
Cost and space savings via a reduction
in external components
Improved yield due to fewer ESD failures
during production
CMOS-compatible control voltage down
to 1.4V
Single control line
Relaxed filtering requirements due to
low harmonic levels
For detailed information and data sheets please see www.infineon.com/rfswitches.
Product List with key [email protected]
Insertion loss
[dB]
Isolation
[dB]
Return loss
[dB]
Supply
[V]
0.4 1)
30
15
2.4...2.8
FWLP-6
BGS12AL7-6
0.4
27
23
2.4...2.8
TSLP-7-6
BGS12AL7-4
0.4
27
23
2.4...2.8
TSLP-7-4
Product name
BGS12A
1) with external matching
14
Package
Package Information
How to read the tables
Package (JEITA)
Scale
1:1
SAMPLE
(Scale)
Pins
Dimensions [mm]
TSFPx / SOTx Packages
Leadless Packages
TSSLP-2-1
2
SOT323
TSLP-2-7
5:1
2
5:1
3
SOT343
2:1
4
2:1
0.62 x 0.32 x 0.31mm³
1.0 x 0.6 x 0.39mm³
2.0 x 2.1 x 0.9mm³
2.0 x 2.1 x 0.9mm³
TSLP-3-1
TSLP-3-7
TSFP-4
SOT363
3
5:1
3
5:1
1.0 x 0.6 x 0.4mm³
1.0 x 0.6 x 0.39mm³
TSLP-3-9
TSLP-7-1
3
5:1
7
1.0 x 0.6 x 0.31mm³
2:1
2.0 x 2.1 x 0.9mm³
5:1
7
2.3 x 1.5 x 0.4mm³
5:1
1.4 x 1.26 x 0.39mm³
TSLP-9-1
TSNP-11-2
5:1
2.3 x 1.0 x 0.31mm³
1.4 x 1.2 x 0.55mm³
6
TSLP-7-6
5:1
9
2:1
2.0 x 1.3 x 0.4mm³
TSLP-7-4
7
4
13
3:1
2.5 x 2.5 x 0.73mm³
For detailed information please refer to our datasheets or www.infineon.com/packages.
15
Ask Infineon
Infineon Hotline-Service at your fingertips.
Where you need it. When you need it.
Infineon offers its toll-free 0800 service hotline as one central number,
available 24 / 7 in English and German.
Germany .......................... 0800 951 951 951
USA ................................. 1866 951 9519
International . .................. 00 800 951 951 951
Direct access ................... +49 89 234-0 (interconnection fee)
Our global connection service goes way beyond standard operating and
switchboard services by offering qualified support on the phone. Call us!
Where to Buy
Infineon Distribution Partners and Sales Offices
Please use our location finder to get in contact with your nearest
Infineon distributor or sales office.
www.infineon.com/WhereToBuy
energy efficiency
communications
security
Infineon Technologies – innovative semiconductor solutions
for energy efficiency, communications and security.
[ www.infineon.com ]
Order No.
B132-H9314-G1-X-7600
Date 02/10
Published by Infineon Technologies AG