ESD Protection Solutions for consumer and wireless communication

ESD Protection Solutions Consumer and wireless communication
www.infineon.com/tvsdiodes
The ESD threat
In today’s electronics, being faster, smaller and smarter creates profitability by enabling
new and better applications. The race to pack even more high-speed functions in a smaller
space accelerates miniaturization roadmaps.
However, the downscale of semiconductor chips together with the increase of doping
levels results in a dramatic reduction of the thin gate oxide layer and the width of the
pn-junction in semiconductor chips. This, in combination with greater circuit population,
increases the susceptibility of the semiconductor chip to ESD.
The subsequent failures of the electronic equipment can be noticed as hard failures,
latent damage or temporary malfunction. Hard failures are easier to spot, and in general
require the failed device to be replaced. In the best case the failure will be detected before
the equipment leaves the factory and customers will never receive it. Failures leading to
temporary malfunction of equipment or latent failures are quite common and very difficult
to detect or trace in the field. Temporary malfunctions may go unreported but can result in
negative customer impressions as the user may need to reset the equipment. A product
recall for swapping or repairing due to ESD failures may cause the company a cost several
times higher than the cost of the device itself.
An efficient system design normally includes the implementation of a shielded chassis in
order to minimize ESD risks. Nevertheless, ESD strikes represent a permanent threat to
device reliability as they can easily find a way to bypass the shielded chassis and be
injected into the IC/ASICs. Connectors and antennas exposed to the outside world are
possible entry points of electrostatic discharges generated by end users.
ESD protection for faster, smaller and smarter applications
The only way to ensure stable operation and maximum reliability at the system level is to
ensure that equipment is properly protected against electrostatic discharge and transients
by an external protection device.
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Infineon’s Value Proposition
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Improve ESD immunity at system level by providing first-class protection beyond IEC61000-4-2 level 4 standard.
Superior multi-strike absorption capability.
Safe and stable clamping voltages to protect even the most sensitive electronic equipment.
Protection devices that fully comply with high-speed signal quality requirements.
Array solutions that boost space saving in the board and reduce part count.
Easy-to-use single devices for space-constrained applications.
Discrete components that drain extremely low leakage currents and help to extend battery duration.
Packages enabling easy PCB layout.
Infineon TVS Diode Series covered by this brochure
Application Segments
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Ultralow-capacitance series
Low-capacitance series
n RF antenna series n General-purpose series Mobile communication
Consumer
n Data processing
n Car infotainment
Fascination for high speed
Fine tuning of transmission lines in high-speed interfaces is not a trivial issue. Even the most negligible parasitic
capacitance or inductance loading of an ESD protection device has impact on impedance requirements. This will
degrade signal quality, and can make the difference between pass and failure of high-speed signal requirements.
In applications implementing differential pairs like HDMI, not only the intrinsic capacitance of each single protection
element but also the capacitance matching between the individual elements on data pairs plays a decisive role in
signal integrity.
For many years, manufacturers of transient voltage suppression devices were confronted with technology and
performance limitations to achieve low-capacitance devices. Today, efforts still focus on reducing capacitance while
keeping ESD performance at an optimum. Infineon TVS diodes are the pioneers for ultralow-capacitance devices.
Infineon’s newest TVS diode generations set the standard for ESD protection in high-speed applications. Offering
unique low-capacitance features down to 0.2 pF and at the same time providing superior protection to sensitive
electronic equipment, Infineon TVS diodes set a benchmark in the protection arena.
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Ultralow-capacitance series
Best in Market Solution for USB 2.0, HDMI 1.3, DisplayPort, Ethernet, S-ATA and many more
The ESD5V3 and ESD3V3 series are specially designed for ESD and transient protection of the latest generation of high-speed
interfaces with baud rates up to 8 GBd and beyond. The core features of these products are their ultralow parasitic capacitance
combined with low clamping voltage and fast response time. This, in combination with dedicated package options, make
these parts an ideal choice for high-speed transmission lines with the most stringent performance requirements.
Features and Benefits
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Superior ESD and transient absorption capability beyond IEC market standards.
Ultralow parasitic capacitance down to 0.2 pF to minimize signal attenuation at high frequencies.
Very low clamping voltages to protect very susceptible IC/ASICs.
Ultrasmall form factor and slimmest package designs.
Special devices with leakage current reduced to less than 1 nA to ensure long battery duration in portable devices.
Optimized flow-through array designs for easy lines routing.
Unidirectional or bidirectional ESD protection.
For maximum operating voltages of 3.3 V or 5.3 V.
TVS diode
Package
V RWM
ESD
EFT
Ipp max
IR
[V]
[kV] (1)
[A] (2)
[A] (3)
[nA]
[V]
@IPP max
VF
Ct
[V]
[pF]
@IPP
@1 MHz,
max
OV
ESD5V3U1U-02LS
TSSLP-2
5.3
20
40
3
< 10
12
4
0.4
ESD5V3U1U-02LRH
TSLP-2
5.3
20
40
3
< 10
12
4
0.4
ESD3V3U1U-02LS
TSSLP-2
3.3
20
40
3
<1
12
4
0.4
ESD3V3U1U-02LRH
TSLP-2
3.3
20
40
3
<1
12
4
0.4
ESD5V3U2U-03RLH
TSLP-3
5.3
20
40
3
<1
12
4
0.2/0.4 (4)
ESD5V3U2U-03F
TSFP-3
5.3
20
40
3
<1
12
4
0.2/0.4 (4)
ESD5V3U4RRS
SOT363
5.3
15
50
3
< 10
12
4
0.4
ESD5V3U4U-HDMI
TSLP-9
5.3
20
40
3
<1
12
4
0.45
(1) Electrostatic discharge, contact discharge as per IEC61000-4-2.
(2)Electric fast transient according to IEC61000-4-4 (5/50 ns).
(3)Surge, according to IEC61000-4-5 (8/20 µs).
(4)0.2 pF for bidirectional configuration, 1-line protection and 0.4 pF for unidirectional configuration, 2-line protection.
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Diode Configurations
Part name
Configuration
Protection
Protected line, signal level up to +VRWM
(unidirectional)
ESD5V3U1UESD3V3U1U-
The protection diode should be placed
very close to the location where the ESD
or other transients can occur to keep
loops and inductances as small as possible.
Pin 2 should be connected directly to a
ground plane on the board.
1 line,
unidirectional
2 protected high-speed I/0 data lines
2
1
The protection diode should be
placed very close to the location
where the ESD or other transients
can occur to keep loops and
inductances as small as possible.
Pin 3 should be connected directly to
a ground plane on the board.
3
2 lines,
unidirectional
ESD5V3U2U1 protected high-speed I/0 data lines
2
1
The protection diode should be placed very
close to the location where the ESD or
other transients can occur to keep loops
and inductances as small as possible.
Pin 3 should not be connected to the board.
0.2 pF typ.
3
1 line,
bidirectional
(pin 3 floating)
1 protected high-speed I/0 data lines
1 2
4 5
ESD5V3U4U-HDMI
The protection diode should be placed
very close to the location where the ESD
or other transients can occur to keep
loops and inductances as small as possible.
Pin 3 should be connected directly to a
ground plane on the board. Pins 6, 7, 8 and
9 are not connected.
3
4 lines,
unidirectional
4 protected high-speed I/0 data lines,
1 protected power supply line (+Vcc)
3
2
1
ESD5V3U4RRS
+Vcc
Pin2 is directly connected to the
positive power supply line (+Vcc).
Pin5 should be connected directly to
a ground plane on the board.
4
5
4 data lines and 1
power supply line,
unidirectional
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Typical Applications
USB singlepin-type
receptacle
USB host/device
PWE
ESD5V3U2U
DM
DP
1
VBUS
2
D-
3
D+
4
GND
ESD5V3U1U
USB dualpin-type
receptacle
USB host/device
PWE1
1
VBUS
DM1
2
D-
DP1
3
D+
4
GND
ESD5V3U2U
ESD5V3U4U
PWE2
1
VBUS
DM2
2
D-
DP2
3
D+
4
GND
Application in USB 2.0: type “A” or “B” receptacle.
FireWire controller
(IEEE 1394a-2000)
4-pin socket
Port A
ESD5V3U4U
Port B
1
TPB*
2
TPB
3
TPA*
4
TPA
8...30 V
FireWire controller
(IEEE 1394b-2002)
Optional for
transmitter
9-pin beta/bilingual
socket
Port B
ESD5V3U4U
Port A
1
TPB*
2
TPB
3
TPA*
4
TPA
5
TPA(R)
6
Required for
beta-only
receiver
VG
7
SC (N.C.)
8
VP
9
TPB(R)
Application in FireWire interfaces (IEEE 1394a-2000 and IEEE 1394b-2002).
+5V
HDMI Type A
Connector
HDMI Source/Sink
1
TMDS Data2
2
ESD5V3U4U
3
4
5
TMDS Data1
6
7
TMDS Data0
TMDS Channels
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ESD5V3U4U
9
10
11
TMDS Clock
12
CEC
SCL
ESD5V3U4U
13
CEC Line
14
N.C.
15
16
SDA
Hot Plug Detect
ESD5V3U1U
Application in HDMI 1.3 interfaces.
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DDC (I²C Bus)
17
DDC/CEC GND
18
+5V
19
Hot Plug Detect
Low-capacitance series
The bidirectional ESD8V0*** diode series is designed for use in a wide voltage range from –8 V to +14 V. With a typical
capacitance down to 4 pF, it ensures signal integrity on digital high-speed interfaces with baud rates of up to 500 MBd.
The key feature of this series is its low leakage current of less than 1nA which is guaranteed over repeated strikes, an
important factor for battery-powered devices and a differentiating feature versus other forms of ESD protection.
Features and Benefits
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Outstanding ESD absorption capability exceeding IEC61000-4-2 level 4.
Very low clamping voltages to protect susceptible IC/ASICs.
Capacitance down to 4 pF.
Ultrasmall form factor down to 0.6 x 0.3 x 0.3 mm.
Bidirectional protection of 1 or 2 lines.
Leakage current reduced to less than 1 nA to ensure long battery duration in portable devices.
TVS diode
Package
V RWM
ESD
EFT
Ipp max
IR
[V]
[kV] (1)
[A] (2)
[A] (3)
[nA]
Vc
[V]
@IPP max
VF
Ct
[V]
[pF]
@IPP
@1 MHz,
max
OV
ESD8V0L1B-02LRH
TSLP-2
–8/14
25
40
2.5
<1
26
20
8.5
ESD8V0L2B-03L
TSLP-3-1
–8/14
15
40
1
<1
26
20
4
ESD8V0L2B-03LRH (4)
TSLP-3-7
–8/14
15
40
1
<1
26
20
4
ESD8V0R1B-02LRH
TSLP-2
–8/14
14
40
1
<1
23
17
4
ESD8V0R1B-02LS
TSSLP-2
–8/14
14
40
1
<1
23
17
4
(1) Electrostatic discharge, contact discharge as per IEC61000-4-2.
(2)Electric fast transient according to IEC61000-4-4 (5/50 ns).
(3)Surge, according to IEC61000-4-5 (8/20 µs).
(4)Product on request.
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Diode Configurations
Part name
Configuration
Protection
Protected signal line, level up to
±8 V (bidirectional)or +14 V
(unidirectonal)
2
ESD8V0R1BESD8V0L1B-
Pin 1 should be connected directly to a
ground plane on the board.
1 line,
bidirectional for
voltage level up to ±8 V
or unidirectional
up to +14 V.
1
2 protected signal lines, level up to
±8 V (bidirectional) or
+14 V (unidirectional)
ESD8V0L2B-
2
1
3
The protection diode should be
placed very close to the location
where the ESD or other transients
can occur to keep loops and
inductances as small as possible.
Pin 3 should be connected directly to
a ground plane on the board.
2 lines,
bidirectional for
voltage level up to ±8 V
or unidirectional
up to +14 V.
Protected high-speed signal line,
level up to ±22 V (bidirectional)or
ESD8V0L2B-
2
1
8
Pin 1 (or pin 2) should
3 be connected directly to a
ground plane on the board.
Pin 3 is not connected.
1 line,
pin 3 non- connected,
bidirectional for
voltage level up to
±22 V.
Typical Applications
LLP
CLP
Audio
amplifier
LLP
CLP
ESD8V0L2B
Microphone
bias voltage
Microphone
amplifier
A2
1 µF
CCO
BGF200
Audio jack
C3
B1
C1
CCO
A3
Application in Audio jack. Two audio lines can be simultaneously protected with one dual-channel TVS diode.
Keypad
*
7
4
1
0
8
5
2
#
9
6
3
R1
R2
R3
C1
C2
C3
C4
ESD8V0R1B-02LS
Application in keypad. If the ESD problem is localized on a certain number of lines in a given application,
the miniature TVS in TSSLP offers great design flexibility.
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RF antenna TVS diodes
Optimal ESD protection without sacrificing RF signal quality
The ESDxPyRFz family of transient voltage suppressor diodes from Infineon overcomes the
ESD (electrostatic discharge) problem in RF antenna and high-speed data transmission
lines by providing outstanding protection in a very small form factor.
For any antenna system, electrostatic discharges are a continuous threat to device
reliability. These antennas are often exposed to direct ESD events as they are externally
connected or installed in ESD-sensitive locations. For these reasons it is mandatory for the
elements located right after the antenna to be protected against ESD threats. This is true
despite the fact that some RF front-end technologies that are connected to the antenna
now have built-in ESD protection. This internal protection is primarily intended to safeguard
the semiconductor chip from electrostatic discharges during manufacture, not from
system level (end user) use. ESD robustness at the system level can only be achieved by
implementing an external protection device.
When applied to high-frequency circuits, the parasitic capacitance of the protection device
must be kept at a minimum in order not to interfere with the signal performance. Designers
should also choose devices providing low trigger and appropriate clamping voltages for
the application.
Features and Benefits
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ESD absorption capability up to ±15 kV (contact) exceeding IEC 61000-4-2
standard level 4.
No degradation even after multiple strikes.
Extremely low and stable forward clamping voltage of 6 V at 5 A as per IEC 61000-4-5.
Ultralow capacitance of only 0.2 pF at 1 GHz.
Very small form of 0.6 x 0.3 x 0.3 mm3 for space-constrained applications.
Packages with ultralow series inductance down to only 0.2 nH (TSSLP) or 0.4 nH (TSLP).
Optimized devices with very low noise figure and high-return loss for protection of ESDsensitive low noise amplifiers (LNA) operating in the gigahertz range.
Continuous expansion of TVS diode portfolio for RF antenna applications.
TVS diodes
Package
V RWM
[V]
V ESD
[kV] (1)
Ipp max
[A] (2)
Vcl@
Ipp maX
[V]
Insertion
loss (3)
[dB]
Return
loss (3)
[dB]
Noise
figure (3)
[dB]
Ct
@OV
[pF]
ESD3V3U1U-02LS
TSSLP-2
3.3
20
3
12
0.22
19
0.16
[email protected] MHz
ESD3V3U1U-02LRH
TSLP-2
3.3
20
3
12
0.23
19
0.17
[email protected] MHz
ESD5V3U1U-02LS
TSSLP-2
5.3
20
3
12
0.22
19
0.16
[email protected] MHz
ESD5V3U1U-02LRH
TSLP-2
5.3
20
3
12
0.23
19
0.17
[email protected] MHz
ESD1P0RFS
SOT363
70
20
10
12
on request
[email protected] MHz
ESD1P0RFW
SOT323
70
20
10
12
on request
[email protected] MHz
ESD0P8RFL
TSLP-4
50
20
10
12
0.44
11
0.08
[email protected] GHz
ESD0P4RFL
TSLP-4
50
15
5
6
0.12
18
0.06
[email protected] GHz
ESD0P2RF-02LRH (4)
TSLP-2
5.3
20
3
16
0.13
23
0.11
[email protected] GHz
ESD0P2RF-02LS (4)
TSSLP-2
5.3
20
3
16
0.12
23
0.10
[email protected] GHz
(1) Contact discharge as per IEC61000-4-2.
(2)According to IEC61000-4-5.
(3)TA = 25°C, V R = 0 V, f = 2 GHz, Z S = ZL = 50 Ω.
(4)Preliminary data.
Diode Configurations
Part name
Configuration
2 protected signal lines,
superimposed DC voltage up to
±VF (diode forward voltage)
ESD1P0RFS
1 protected signal line,
superimposed DC voltage up to
±2xVF (diode forward voltage)
4
3
4
3
5
2
5
2
6
1
6
1
Line capacitance to ground = 1 pF
2 lines antiparallel
1 protected signal line, superimposed
DC voltage up to ±VF (diode
forward voltage)
Line capacitance to ground = 0.5 pF
1 line low capacitance, antiparallel
1 protected signal line,
superimposed DC voltage up
to +Vcc (voltage supply)
3
+Vcc
2
3
ESD1P0RFW
Line capacitance to ground = 1 pF
1 line, antiparallel
1
Line capacitance to ground = 1 pF
1 line, rail to rail
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Part name
Configuration
1 protected signal line,
superimposed DC voltage up to
±VF (diode forward voltage)
ESD0P8RFL
1 protected signal line,
superimposed DC voltage up to
+Vcc (voltage supply)
Line to ground capacitance
0.8 pF @ 1 GHz
Line to ground capacitance
0.8 pF @ 1 GHz
+Vcc
1 line, antiparallel
1 line, rail to rail
1 protected signal line,
superimposed DC voltage up to
±VF (diode forward voltage)
ESD0P4RFL
1 protected signal line,
superimposed DC voltage up to
+Vcc (voltage supply)
Line to ground capacitance
0.4 pF @ 1 GHz
Line to ground capacitance
0.4 pF @ 1 GHz
+Vcc
1 line, antiparallel
1 line, rail to rail
Protected line, signal level up to
±5.3 V (bidirectional)
ESD0P2RF-02LS
ESD0P2RF-02LRH
2
1
The protection diode should be placed very
close to the location where the ESD or other
transients can occur to keep loops and
inductances as small as possible. Pin 1
(or pin 2) should be connected directly to
a ground plane on the board.
1 line protection, bidirectional
RF Characteristics
With a capacitance of only 0.2 pF, the ESD0P2RF- diode series can be applied to RF circuits up to 4 GHz without any additional
compensation technique. With an inductive transmission line of less than 2 mm, the frequency range can easily be extended
to ultrawide-band applications up to 8 GHz and beyond.
The extremely high 3 dB bandwidth of more than 11 GHz for the 0.4 pF diode ESD5V3U1U-02LS is due to the super-small
package with parasitic inductance of only 0.2 nH. The ESD0P4RFL results in a total parasitic inductance of again only 0.2 nH.
Due to its very low parasitic capacitance of only 0.4 pF and a 3 dB bandwidth beyond 11 GHz, there is no need for
compensation of the diode’s capacitance up to 2 GHz. Beyond 2 GHz the capacitance can be easily compensated by a short
inductive transmission line surrounding the diode (see Figure 4). In the case of ESD0P8RFL with 0.8 pF capacitance, this
diode can be implemented without the need for any compensation technique up to 1 GHz.
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RF Characteristics
Noise Figure
0.6
ESD0P4RFL
Noise Figure (dB)
0.5
ESD0P2RF-02LS
ESD5V3U1U-02LS (VR=3V)
0.4
0.3
0.2
0.1
0
0
1
2
3
Frequency (GHz)
4
5
6
4
5
6
Figure 1: Noise figure for RF antenna TVS diodes.
Insertion Loss
1
ESD0P4RFL
Insertion Loss (dB)
0.8
ESD0P2RF-02LS
ESD5V3U1U-02LS (VR=3V)
0.6
0.4
0.2
0
0
1
2
3
Frequency (GHz)
Figure 2: Insertion loss for RF antenna TVS diodes.
Transmission Coefficient
5
12.2 GHz
-3 dB
|S21|2 (dB)
0
17.8 GHz
-3 dB
11.3 GHz
-3 dB
-5
ESD0P4RFL
-10
ESD0P2RF-02LS
ESD5V3U1U-02LS (VR=3V)
-15
0
5
10
Frequency (GHz)
15
20
Figure 3: Wide span transmission coefficient (|S21|2) for RF antenna TVS diodes.
Figure 4: Example of compensation schema by a skinny trace.
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Typical Applications
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Applications in antiparallel configuration: for low RF-signal levels without
superimposed DC voltage, such as: GPS, FM Antenna, XM-Radio, Sirius, DVB
(Digital Video Broadcasting), DMB (Digital Multimedia Broadcasting), DAB
(Digital Audio Broadcasting), and remote keyless entry.
n Also for applications in rail-to-rail configuration including DC-biased lines where
the RF signal levels do not approach the clamping reference voltages, such as:
LNB interfaces, HDMI, S-ATA, and Gbit Ethernet.
Internal antenna
External antenna (active)
ESD0P4RFL
Receiver
VCC_LNA
BFP740
RF_IN
BGS12A
BFP740
ESD0P4RFL
ESD5V3U1U
ESD5V3U1U
Application in internal and external antenna.
Device (RKE, DVB-H, GPS, ...)
Active antenna
+5V
Receiver
DSP
ESD0P4RFL
ESD0P8RFL
Application in GPS, RKE, DVB-H.
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ESD5V3U1U
LO
General-purpose diodes
INFINEON general-purpose TVS diodes are designed to handle high-peak transient currents far beyond market standards
and to remain unchanged after repetitive strikes. These devices are especially well suited for ESD and transient protection
of low-speed data and power lines in applications with a maximum operating voltage of 5.3 V.
Features and benefits
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ESD (electrostatic discharge), EFT (electric fast transient) and surge protection exceeding market standards.
Excellent high current absorption capability.
Uni- or bidirectional operation possible.
Very low clamping voltage.
Arrays for multiline protection.
TVS diode
Package
V RWM
[V]
ESD
[kV] (1)
EFT
[A] (2)
Ipp max
[A] (3)
IR
[nA]
Vc
[V]
@ IPP max
VF
[V]
@ IPP max
Ct
[pF]
@1 MHz,
OV
ESD5V0S1U-03W
SOD323
5.0
30
80
40
20
11
4
430
ESD5V0S2U-06
SOT23
5.0
30
80
40
20
11
4
430
ESD5V0S4US
SOT363
5.3
30
80
10
5
10.5
3.5
70
ESD5V0S5US
SOT363
5.3
30
80
10
5
10.5
3.5
70
(1) Electrostatic discharge, contact discharge as per IEC61000-4-2.
(2)Electric fast transient according to IEC61000-4-4 (5/50 ns).
(3)Surge, according to IEC61000-4-5 (8/20 µs).
Diode Configurations
Part name
Configuration
Protection
Protected signal line
1
ESD5V01U-03W
The protection diode should be placed very
close to the location where the ESD can
occur to keep loops and inductances as
small as possible.
1 line,
unidirectional
2
Protected signal line
Protected signal line
2
1
ESD5V0S2U-06
3
The protection diode should be
placed very close to the location
where the ESD or other transients
can occur to keep loops and
inductances as small as possible.
Pin 3 should be connected directly to
a ground plane on the board.
2 lines,
unidirectional
15
Configuration
Part name
Protection
Protected signal line
ESD5V0S2-U6
1
Pin 2 should be connected
3 directly to a ground plane
on the board.
Pin 3 is not connected.
2
1 line,
bidirectional
4 protected signal lines, level 0...+5.3 V
3
2 1
ESD5V0S4US
Pin 2 and pin 5 should be
connected directly to a ground
plane on the board.
4
5
4 lines,
unidirectional
6
4 protected signal lines, level –5.3 V...+5.3 V
6 5
1
2
4
3
For bidirectional protection pin 2
(or any other pin except pin 5)
should be connected directly to a
ground plane on the board.
Pin 5 is not connected. Total clamping
voltage is the sum of VCL +VFC
(see table on page 2).
4 lines,
bidirectional
ESD5V0S5US
5 protected signal lines, level 0...+5.3 V
16
3
2
1
4
5
6
The protection diode should be
placed very close to the location
where the ESD or other transients can
occur to keep loops and inductances
as small as possible.
Pin 5 should be connected directly to a
ground plane on the board.
5 lines,
unidirectional
Typical Applications
The general-purpose diode series is recommended for protection of sensitive lines that
have low data rates such as:
n
Power inputs line
Keypad/keyboard interfaces
n Microphone and speaker interfaces
n Headset
n Flash card
n
Power
management IC
Li-Ion/polymer cell
+
BAT
T
TS
-
ESD5V0S2U-06
Application in a Li-ion polymer battery.
SMB host
controller
BAT
VREF5
Smart battery
+
C
SMBCLK
SMBDAT
BAT
TS
D
MCU
T
TS
-
ESD5V0S4US
Application in a smart battery.
17
The risks of insufficient ESD protection
What are the risks of insufficient ESD protection?
n
The high-peak voltage within the first nanoseconds, which can result in
dielectric breakdown of downstream devices.
n The electrical energy of the ESD pulse can damage or disrupt downstream
devices as a result of their ultrafast high energy signature.
Therefore it is important that an ESD protection device keeps both the peak voltage at the ESD sensitive device and the electrical energy that is absorbed by
the sensitive equipment as low as possible. Some ESD protection devices specify
that they will survive an 8 kV strike. However, their trigger and clamping voltages
are beyond the maximum voltage level that the downstream protected device can
withstand. As a result, the protected chip is subjected to a high voltage and energy
stress that increase the risk of future malfunctions, or directly destroy it.
Performance Comparison
A comparison between a polymer-based ESD protection device, a low-capacitance
varistor and Infineon’s low-capacitance ESD protection diode ESD0P8RFL is shown in
Figure 5. Figure 6 points out the peak voltage (Vpeak ), the clamping voltage (Vcl ) after 30 ns
and the dissipated thermal energy (Wel ) at a 50 Ω load. The ESD tests were performed at
8 kV contact discharge according to IEC 61000-4-2 standard (Figure 6).
8 kV ESD event (contact discharge as per IEC 61000-4-2)
550
Varistor
Polymer
ESD0P8RFL
500
450
400
Voltage (V)
350
300
250
200
150
100
50
0
0
50
100
150
200
250
300
350
400
450
Figure 5: Clamping voltage comparison with Infineon TVS diode, polymer and varistor devices.
18
Time (ns)
ESD test voltage [kV]
V PEAK
[V]
2
23
3
20
8
43
10
200
Polymer-based
2
306
150
33,200
protection device
8
486
64
17,000
2
245
120
22,700
8
528
300
151,000
ESD protection device
INFINEON ESD0P8RFL
Multilayer varistor (0.5pF)
Vcl at 30 ns
[V]
Wel at 50 Ω (nWs)
Figure 6: Comparison between different ESD protection devices and ESD test voltages.
n
A typical polymer device breaks down only after a high trigger voltage is reached. Designers should consider this aspect
because the overall energy delivered to the protected equipment after clamping can be above its tolerable level and
destroy it. Even in the cases where ESD events are absorbed by the polymer, it takes a long time before the polymer
recovers to face a new ESD strike again. Polymers show aging due to degradation effects that can be triggered on multiple ESD strikes.
n The evaluated varistors reflect the typical trade-off between low capacitance and low clamping voltage that exist in some kinds of devices. Low-capacitance varistors have very high clamping voltages (for example, measured after 30 ns) far in excess of 100 V.
n When using varistors or polymer protection devices the system may appear protected but the energy dissipated into the downstream devices is still high enough to cause damage or disruption.
The subsequent failure of the electronic equipment as a consequence of deficient protection can be seen as hard failures,
latent damage or temporary malfunction (see “ESD threat” section). In the end, customers will perceive this as poor quality.
In summary, the only way to ensure stable operation and maximum reliability at the system level is to ensure that the
equipment is properly protected against electrostatic discharge and transients by adding an external TVS diode protection
device:
n
In this case with Infineon’s ESD0P8RFL protection diode, both peak voltage and clamping voltage and therefore also the
thermal energy dissipated in the load is much lower than for a polymer-based ESD protection device or a low-capacitance varistor.
n In addition, Infineon TVS diodes are characterized by a faster turn-on time, lower dynamic resistance and long-time
reliability.
n Laboratory tests have shown no degradation of Infineon TVS diodes tested under extreme scenarios, i.e. 5,000 ESD pulses at the highest IEC 61000-4-2 level 4. Once the ESD strike is absorbed by the TVS diode, the protection device returns to its high-impedance state very quickly.
19
Flatter, thinner, smaller
Stay one step ahead with Infineon TVS packages
Infineon TVS diodes support our customers’ roadmaps with package solutions that boost both space and cost savings,
resulting in the following benefits:
n
n
n
n
n
n
n
n
Low parasitic inductance.
Flexibility of single and array solutions.
Ultralow height and size of thin (super) small leadless package (TS(S)LP) result in dramatic reduction of footprint and height requirements.
Smallest and flattest size leaded packages (TSFP) for easy optical control on soldering.
Packages suited for all variations in pick-and-place assembly including miniature gullwing leaded packages (SOTx) and small outline diode packages (SODx).
All parts are suited for lead-free soldering according to JEDEC J-STD-020 standard.
All parts are fully compliant with RoHs directive.
Active package development ongoing to expand TVS portfolio.
The World’s Smallest TVS Diodes
At just 0.62 x 0.32 x 0.31 mm for TSSLP-2 (thin super-small leadless) or 1.00 x 0.60 x 0.39 mm for TSLP-2,-3,-4 (thin small
leadless), Infineon packages are the smallest in the world for a TVS diode. These packages enable the creation of smaller and
slimmer designs in applications where PCB space is usually a concern. Specially designed for mobile phones, laptops, PDAs,
digital still cameras, mobile TV and other portable applications, they support designers by generating additional space for
added functionality.
The TSLP and TSSLP packages are leadless. They can be used as drop-in replacement of passive ceramic or polymer
suppressors.
20
Space saving with array solutions
Array solutions can free-up space in the board by combining two, four or more elements in
a single package. Infineon offers a comprehensive portfolio of leaded and leadless devices
for protection of up to 5 lines with a single device. For example, a solution integrating
protection on both the high-speed data lines (x4) and their related power line is available
(see ESD5V3U4RRS).
How to read the tables
Package (JEITA)
Scale
1:1
SAMPLE
(Scale)
Pins
Dimensions [mm]
TSFPx / SODx / SOTx Packages
Leadless Packages
TSSLP-2-1
2
TSLP-2-7
5:1
2
TSFP-3
5:1
3
SOT323 (SC70)
2:1
3
2:1
0.62 x 0.32 x 0.31
1.0 x 0.6 x 0.39
1.2 x 1.2 x 0.55
2.0 x 2.1 x 0.9
TSLP-3-1
TSLP-3-7
SOD323 (SC-76)
SOT143 (SC-61)
2
5:1
3
5:1
2
2:1
4
2:1
1.0 x 0.6 x 0.4
1.0 x 0.6 x 0.39
2.5 x 1.25 x 0.9
2.9 x 2.4 x 1.0
TSLP-4-7
TSLP-9-1
SOT23 (SC-59)
SOT363 (SC-88)
5:1
4
1.2 x 0.8 x 0.39
5:1
9
2.3 x 1.0 x 0.31
2:1
3
2.9 x 2.4 x <1.1
2:1
6
2.0 x 2.1 x 0.9
21
Find out more about ESD protection
www.infineon.com/tvsdiodes
Application Notes
n
AN079: ESD tests according to the human body model.
AN086: ESD protection in RF circuits.
n AN100: ESD protection for high-speed applications: 1- & 2-channel low-capacitance
bidirectional ESD diode in ultrasmall TSLP package.
n AN103: ESD and antenna protection using Infineon ESD0P8RFL.
n AN104: 2-channel bi/unidirectional TVS diodes for ESD protection in CAN/LIN bus
applications ESD24VS2B, ESD24VS2U.
n AN140: ESD protection for digital high-speed interfaces (HDMI, FireWire, etc.)
using ESD5V3U1U.
n AN167: ESD protection for broadband low noise amplifier BGA728L7 for portable
and mobile TV applications.
n
22
Reports
n
n
ESD protection for GPS antenna using Infineon ESD5V3U1U and ESD0P4RFL (upon request).
Recommendations for printed circuit board assembly of Infineon TSLP/TSSLP packages.
Brochures
n
Small signal discretes selection guide
n Small signal discretes product and application guide
n Evaluation boards for automotive, industrial and multimarket applications
n GPS front-end components for mobile and portable applications
Sample Kits
n
n
n
n
n
KIT TVS DIODE 1: TVS diodes for ultrahigh-speed applications
KIT TVS DIODE 2: Diodes for RF antenna protection
KIT TVS DIODE 3: ESD8V0L series for ESD protection
KIT TVS DIODE 4: ESD24VS series for ESD protection
KIT GPS: GPS receive front-end
Speed up your design with INFINEON Evaluation Boards
For information about evaluation boards please contact your sales counterpart at INFINEON.
23
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order no.
B132-h9336-X-X-7600
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