Data Sheet

SO
T2
23
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 3 — 26 July 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NZ.
1.2 Features and benefits
 Low collector-emitter saturation
voltage VCEsat
 High efficiency due to less heat
generation
 High collector current capability
IC and ICM
 Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
 High collector current gain (hFE) at
high IC
 AEC-Q101 qualified
1.3 Applications
 High-voltage DC-to-DC conversion
 High-voltage MOSFET gate driving
 High-voltage power switches
(e.g. motors, fans)
 High-voltage motor control
 Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-100
V
IC
collector current
-
-
-4.1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-8.2
A
RCEsat
collector-emitter
saturation resistance
IC = -4 A; IB = -400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
56
80
mΩ
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
2, 4
4
1
1
2
3
3
SOT223 (SC-73)
sym028
3. Ordering information
Table 3.
Ordering information
Type number
Package
PBSS306PZ
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink;
4 leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS306PZ
S306PZ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-100
V
VCEO
collector-emitter voltage
open base
-
-100
V
VEBO
emitter-base voltage
open collector
-
-5
V
IC
collector current
-
-4.1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-8.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.7
W
[2]
-
1.7
W
[3]
-
2
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
2 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa560
2.5
Ptot
(W)
(1)
2.0
(2)
1.5
1.0
(3)
0.5
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
Conditions
in free air
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
179
K/W
[2]
-
-
74
K/W
[3]
-
-
63
K/W
-
-
15
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
3 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa561
103
Zth(j-a)
(K/W)
δ=1
0.75
102
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa562
102
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
10
0.33
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa563
102
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
102
10
103
tp (s)
Ceramic PCB, Al2O3 standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
ICBO
collector-base cut-off
current
Conditions
Min
Typ
Max
Unit
VCB = -80 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -80 V; IE = 0 A; Tj = 150 °C;
Tamb = 25 °C
-
-
-50
µA
ICES
collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-100
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -2 V; IC = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
200
300
-
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
150
260
-
VCE = -2 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100
175
-
VCE = -2 V; IC = -4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
25
40
-
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-45
-65
mV
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-90
-130
mV
IC = -4 A; IB = -400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-225
-320
mV
IC = -4.1 A; IB = -410 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-230
-325
mV
IC = -4 A; IB = -400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
56
80
mΩ
VCEsat
RCEsat
collector-emitter
saturation voltage
collector-emitter
saturation resistance
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Table 7.
Characteristics …continued
Symbol
Parameter
Min
Typ
Max
Unit
VBEsat
base-emitter saturation IC = -1 A; IB = -100 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Conditions
-
-0.81
-0.9
V
IC = -4 A; IB = -400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-0.93
-1.05
V
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-0.78
-0.85
V
td
delay time
-
15
-
ns
tr
rise time
VCC = -12.5 V; IC = -3 A; IBon = -0.15 A;
IBoff = 0.15 A; Tamb = 25 °C
-
185
-
ns
ton
turn-on time
-
200
-
ns
ts
storage time
-
150
-
ns
tf
fall time
-
175
-
ns
toff
turn-off time
-
325
-
ns
fT
transition frequency
VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
-
100
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
50
80
pF
006aaa645
600
hFE
006aaa651
−14
IC
(A)
−12
(1)
IB (mA) = −1015
−10
−870
400
−580
−8
(2)
−290
(3)
−435
−145
−6
200
−725
−4
−2
0
−10−1
−1
−10
−102
0
−103
−104
IC (mA)
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
VCE = -2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5.
DC current gain as a function of collector
current; typical values
PBSS306PZ
Product data sheet
Fig 6.
Collector current as a function of
collector-emitter voltage; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
6 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa646
−1.2
006aaa649
−1.2
VBE
(V)
VBEsat
(V)
−0.8
−0.8
(1)
(1)
(2)
(2)
−0.4
0
−10−1
Fig 7.
−0.4
(3)
−1
−10
−102
(3)
0
−10−1
−103
−104
IC (mA)
−1
−10
VCE = -2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
006aaa647
−10
Fig 8.
006aaa648
−10
VCEsat
(V)
−1
−1
−10−1
(1)
(2)
(3)
−103
−104
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
VCEsat
(V)
−10−1
−102
(1)
(2)
(3)
−10−2
−10−1
Fig 9.
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS306PZ
Product data sheet
−10
−102
−103
−104
IC (mA)
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
7 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa650
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
1
1
(1)
(2)
(3)
10−1
10−2
−10−1
−1
−10
−102
006aaa652
103
(1)
(2)
(3)
10−1
−103
−104
IC (mA)
10−2
−10−1
−1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS306PZ
Product data sheet
−10
−102
−103
−104
IC (mA)
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
8 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
8. Test information
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 13. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A
Fig 14. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors and is
suitable for use in automotive applications.
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
9. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT223
JEITA
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
Fig 15. Package outline SOT223 (SC-73)
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
10 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 16. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig 17. Wave soldering footprint for SOT223 (SC-73)
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS306PZ v.3
20110726
Product data sheet
-
PBSS306PZ v.2
Modifications:
•
•
•
•
1.2 “Features and benefits” updated
In 7 “Characteristics” new parameter added, ICES
Fig 15. updated
12 “Legal information” updated
PBSS306PZ v.2
20091211
Product data sheet
-
PBSS306PZ v.1
PBSS306PZ v.1
20060920
Product data sheet
-
-
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
12 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
13 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS306PZ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
14 of 15
PBSS306PZ
NXP Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 July 2011
Document identifier: PBSS306PZ
Similar pages