Si4346DY Datasheet

Si4346DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
ID (A)
0.023 at VGS = 10 V
8
0.025 at VGS = 4.5 V
7.5
0.030 at VGS = 3.0 V
6.8
0.036 at VGS = 2.5 V
6.0
Qg (Typ.)
6.5
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Gen II Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Desktop
- Server
• Notebook Logic DC/DC, Low-Side
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free)
Si4346DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
5.9
6.5
4.7
30
2.2
1.20
2.5
1.31
1.6
0.84
TJ, Tstg
Operating Junction and Storage Temperature Range
V
8
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
43
50
74
95
22
27
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
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1
Si4346DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.7
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductance
Diode Forward Voltage
a
V
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
RDS(on)
a
2.0
± 100
µA
20
A
VGS = 10 V, ID = 8 A
0.019
0.023
VGS = 4.5 V, ID = 7.5 A
0.021
0.025
VGS = 3.0 V, ID = 6.8 A
0.023
0.030
0.036
VGS = 2.5 V, ID = 6.0 A
0.027
gfs
VDS = 15 V, ID = 8 A
32
VSD
IS = 2.2 A, VGS = 0 V
0.75
1.1
6.5
10
VDS = 15 V, VGS = 4.5 V, ID = 8 A
2.3
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1.1
0.25
0.5
0.75
9
15
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
11
17
40
60
7
11
IF = 2.2 A, dI/dt = 100 A/µs
20
35
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 10 thru 3 V
25
I D - Drain Current (A)
I D - Drain Current (A)
25
20
15
10
2V
20
15
10
TC = 125 °C
5
5
0
0
0.0
25 °C
- 55 °C
0
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2
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
Si4346DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1200
0.040
Capacitance (pF)
1000
0.030
0.025
VGS = 4.5 V
0.020
Ciss
800
600
-
VGS = 10 V
0.015
C
RDS(on) - On-Resistance (Ω)
0.035
400
0.010
Coss
200
Crss
0.005
0
0.000
0
5
10
ID
15
-
20
25
0
30
5
10
VDS
Drain Current (A)
On-Resistance vs. Drain Current
20
25
30
1.6
VGS = 10 V
ID = 8 A
VDS = 15 V
ID = 8 A
5
4
3
2
(Normalized)
1.4
R DS(on) - On-Resistance
Gate-to-Source Voltage (V)
V GS
15
Drain-to-Source Voltage (V)
Capacitance
6
1.2
1.0
0.8
1
0.6
- 50
0
0
1
2
3
Qg
-
4
5
6
7
8
9
25
50
75
100
125
150
TJ - Junction Temperature (°C)
0.05
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
TJ = 25 °C
IS
-
1
0.1
0.0
0
On-Resistance vs. Junction Temperature
40
10
- 25
Total Gate Charge (nC)
Gate Charge
Source Current (A)
-
0.04
ID = 8 A
0.03
0.02
0.01
0.00
0.3
VSD
0.6
-
0.9
1.2
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si4346DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.4
0.2
80
0.0
60
Power (W)
V GS(th) Variance (V)
ID = 250 µA
- 0.2
40
- 0.4
20
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10- 1
TJ - Temperature (° C)
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
1 ms
1
ID(on)
Limited
10 ms
100 ms
1s
10 s
TA = 25 °C
Single Pulse
0.1
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 71 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
Si4346DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72958.
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000