DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage −15 V IC collector current (DC) −500 mA ICM peak collector current −1 A RCEsat equivalent on-resistance <500 mΩ • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. PARAMETER MAX. UNIT APPLICATIONS PINNING • Power management: – DC-DC converter PIN DESCRIPTION – Supply line switching 1 base – Battery charger 2 emitter – LCD backlighting. 3 collector • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors). 3 handbook, halfpage 2 DESCRIPTION 1 3 Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2515M. 1 2 Bottom view MAM469 MARKING TYPE NUMBER PBSS3515M 2003 Jul 22 MARKING CODE Fig.1 Simplified outline (SOT883) and symbol. DB 2 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −15 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) notes 1 and 2 − −500 mA ICM peak collector current − −1 A IBM peak base current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 2 − 250 mW Tamb ≤ 25 °C; note 1 and 3 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; notes 1 and 2 500 K/W in free air; notes 1, 3 and 4 290 K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. Soldering Reflow soldering is the only recommended soldering method. 2003 Jul 22 3 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = −15 V; IE = 0 − − −100 nA VCB = −15 V; IE = 0; Tj = 150 °C − − −50 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = −10 mA 200 − − VCE = −2 V; IC = −100 mA; note 1 150 − − VCE = −2 V; IC = −500 mA; note 1 90 − − VCEsat UNIT collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −25 mV IC = −200 mA; IB = −10 mA; note 1 − − −150 mV IC = −500 mA; IB = −50 mA; note 1 − − −250 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 − − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 − − −0.9 V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 280 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Jul 22 4 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M MLD665 600 hFE MLD667 −1200 VBE handbook, halfpage handbook, halfpage (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 −1 −10 −200 −10−1 −103 −102 IC (mA) VCE = −2 V. VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD669 −103 handbook, halfpage −1 −10 −102 −103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD668 −1200 handbook, halfpage VBEsat VCEsat (mV) (mV) −1000 (1) −102 (2) −800 (1) −600 (3) −10 (2) (3) −400 −1 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 IC/IB = 20. IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 22 5 −1 −10 −102 −103 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M MLD666 −1200 (4) IC (3) (2) MLD670 103 handbook, halfpage handbook, halfpage RCEsat (1) (Ω) (mA) 102 (5) −800 (6) (7) 10 (8) −400 (9) 1 (1) (10) (2) 0 −4 −2 0 −6 −8 10−1 −10−1 −10 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. IB = −4.2 mA. IB = −3.5 mA. IB = −2.8 mA. IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. −102 −103 IC (mA) (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Collector current as a function of collector-emitter voltage; typical values. 2003 Jul 22 −10 IC/IB = 20. (5) (6) (7) (8) Fig.7 Fig.6 −1 (3) 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2003 Jul 22 REFERENCES IEC JEDEC JEITA SC-101 7 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Jul 22 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 750 11558