Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PBSS3515M
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product data sheet
2003 Jul 22
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability IC and ICM
VCEO
collector-emitter voltage
−15
V
IC
collector current (DC)
−500
mA
ICM
peak collector current
−1
A
RCEsat
equivalent on-resistance
<500
mΩ
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
PARAMETER
MAX.
UNIT
APPLICATIONS
PINNING
• Power management:
– DC-DC converter
PIN
DESCRIPTION
– Supply line switching
1
base
– Battery charger
2
emitter
– LCD backlighting.
3
collector
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
3
handbook, halfpage
2
DESCRIPTION
1
3
Low VCEsat PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2515M.
1
2
Bottom view
MAM469
MARKING
TYPE NUMBER
PBSS3515M
2003 Jul 22
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
DB
2
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−15
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
notes 1 and 2
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 2
−
250
mW
Tamb ≤ 25 °C; note 1 and 3
−
430
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; notes 1 and 2
500
K/W
in free air; notes 1, 3 and 4
290
K/W
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jul 22
3
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
VCB = −15 V; IE = 0
−
−
−100
nA
VCB = −15 V; IE = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −10 mA
200
−
−
VCE = −2 V; IC = −100 mA; note 1
150
−
−
VCE = −2 V; IC = −500 mA; note 1
90
−
−
VCEsat
UNIT
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−
−25
mV
IC = −200 mA; IB = −10 mA; note 1
−
−
−150
mV
IC = −500 mA; IB = −50 mA; note 1
−
−
−250
mV
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA; note 1
−
300
<500
mΩ
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −50 mA; note 1
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA; note 1
−
−
−0.9
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
280
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Jul 22
4
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
MLD665
600
hFE
MLD667
−1200
VBE
handbook, halfpage
handbook, halfpage
(mV)
(1)
−1000
(1)
400
−800
(2)
(2)
−600
200
(3)
(3)
−400
0
−10−1
−1
−10
−200
−10−1
−103
−102
IC (mA)
VCE = −2 V.
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD669
−103
handbook, halfpage
−1
−10
−102
−103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD668
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−102
(2)
−800
(1)
−600
(3)
−10
(2)
(3)
−400
−1
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Jul 22
5
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
MLD666
−1200
(4)
IC
(3)
(2)
MLD670
103
handbook, halfpage
handbook, halfpage
RCEsat
(1)
(Ω)
(mA)
102
(5)
−800
(6)
(7)
10
(8)
−400
(9)
1
(1)
(10)
(2)
0
−4
−2
0
−6
−8
10−1
−10−1
−10
VCE (V)
Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = −7 mA.
IB = −6.3 mA.
IB = −5.6 mA.
IB = −4.9 mA.
IB = −4.2 mA.
IB = −3.5 mA.
IB = −2.8 mA.
IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
−102
−103
IC (mA)
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector current as a function of
collector-emitter voltage; typical values.
2003 Jul 22
−10
IC/IB = 20.
(5)
(6)
(7)
(8)
Fig.7
Fig.6
−1
(3)
6
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2003 Jul 22
REFERENCES
IEC
JEDEC
JEITA
SC-101
7
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
PBSS3515M
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Jul 22
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp9
Date of release: 2003 Jul 22
Document order number: 9397 750 11558
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