Data Sheet

83B
PBSS3515MB
SO
T8
15 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 1 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
SOT883B Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515MB.
1.2 Features and benefits
 Leadless ultra small SMD plastic
package
 High efficiency due to less heat
generation
 Low package height of 0.37 mm
 AEC-Q101 qualified
 Low collector-emitter saturation
voltage VCEsat
 Reduced Printed-Circuit Board (PCB)
requirements
 High collector current capability IC and
ICM
1.3 Applications
 DC-to-DC conversion
 LCD backlighting
 Supply line switching
 Driver in low supply voltage
applications (e.g. lamps and LEDs)
 Battery charger
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-15
V
IC
collector current
-
-
-500
mA
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-1
A
RCEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
500
mΩ
PBSS3515MB
NXP Semiconductors
15 V, 0.5 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
B
base
2
E
emitter
1
3
C
collector
2
Graphic symbol
3
3
1
Transparent
top view
SOT883B
2
sym013
3. Ordering information
Table 3.
Ordering information
Type number
Package
PBSS3515MB
Name
Description
Version
-
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
SOT883B
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBSS3515MB
0001 0011
[1]
For SOT883B binary marking code description see Figure 1
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
PBSS3515MB
Product data sheet
SOT883B binary marking code decription
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-15
V
VCEO
collector-emitter voltage
open base
-
-15
V
open collector
-
-6
V
-
-500
mA
-
-1
A
VEBO
emitter-base voltage
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IBM
peak base current
single pulse; tp ≤ 1 ms
total power dissipation
Tamb ≤ 25 °C
Ptot
-
-100
mA
[1][2]
-
250
mW
[3][2]
-
590
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS3515MB
Product data sheet
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1][2]
-
-
500
K/W
[3][2]
-
-
212
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommented soldering method.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab603
103
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac985
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0
1
10-5
0.01
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS3515MB
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = -15 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -15 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
hFE
DC current gain
VCE = -2 V; IC = -10 mA; Tamb = 25 °C
200
-
-
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
150
-
-
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
90
-
-
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
-
-
-25
mV
IC = -200 mA; IB = -10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-150
mV
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-250
mV
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
500
mΩ
VBEsat
base-emitter saturation IC = -500 mA; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-1.1
V
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-0.9
V
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
280
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
10
pF
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
mld665
600
hFE
mld667
−1200
VBE
(mV)
(1)
−1000
(1)
400
−800
(2)
(2)
−600
200
(3)
(3)
−400
0
−10−1
Fig 4.
−1
−10
−102
IC (mA)
-103
−200
−10−1
−1
VCE = -2 V
VCE = -2 V
(1) Tamb = 150 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
DC current gain as a function of collector
current; typical values
mld669
−103
Fig 5.
−10
−102
−103
Base-emitter voltage as a function of collector
current; typical values
mld668
−1200
VBEsat
(mV)
VCEsat
(mV)
IC (mA)
−1000
(1)
−102
(2)
−800
(1)
−600
(3)
−10
(2)
(3)
−400
−1
−10−1
−1
−10
−102
IC (mA)
−103
−200
−10−1
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(3) Tamb = -55 °C
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS3515MB
Product data sheet
−10
−102
IC (mA)
−103
IC/IB = 20
IC/IB = 20
Fig 6.
−1
Fig 7.
Base-emitter saturation voltage as a function of
collector current; typical values
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
006aac992
-1.2
IC
(A)
IB (mA) = -7.0
-5.6
-0.8
mld670
103
RCEsat
(Ω)
-6.3
102
-4.9
-4.2
-3.5
-2.8
10
-2.1
-0.4
-1.4
1
(1)
-0.7
(2)
0
0
-2
-4
-6
-8
-10
VCE (V)
10-1
-10-1
-1
-10
(3)
-102
IC (mA)
-103
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 8.
Collector current as a function of
collector-emitter voltage; typical values
Fig 9.
Collector-emitter equivalent on-resistance as a
function of collector current; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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15 V, 0.5 A PNP low VCEsat (BISS) transistor
9. Package outline
0.65
0.55
0.40
0.34
0.35
1
2
0.20
0.12
0.04 max
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 10. Package outline SOT883B
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig 11. Reflow soldering footprint for SOT883B
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Product data sheet
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11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS3515MB v.1
20120306
Product data sheet
-
-
PBSS3515MB
Product data sheet
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Rev. 1 — 6 March 2012
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12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PBSS3515MB
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
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14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . .7
Quality information . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 March 2012
Document identifier: PBSS3515MB