datasheet

SKiiP 1814 GB17E4-3DUL
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
V
System
SKiiP® 4
2-pack-integrated intelligent
Power System
VCC 1)
Operating DC link voltage
1300
Visol
DC, t = 1 s, each polarity
5600
V
It(RMS)
per AC terminal, rms, sinusoidal current
500
A
Imax (peak)
max. peak current of power section
2700
A
IFSM
Tj = 175 °C, tp = 10 ms, sin 180°
11907
A
I²t
Tj = 175 °C, tp = 10 ms, diode
709
kA²s
fout
fundamental output frequency
(sinusoidal)
1
kHz
Tstg
storage temperature
-40 ... 85
°C
IGBT
VCES
IC
SKiiP 1814 GB17E4-3DUL
Tj = 175 °C
1700
V
Ts = 25 °C
2547
A
Ts = 70 °C
2049
A
ICnom
Tj 2)
junction temperature
1800
A
-40 ... 175
°C
Diode
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL recognition in progress, file no.
E242581
Typical Applications*
•
•
•
•
Tj = 25 °C
Renewable energies
Traction
Elevators
Industrial drives
Remarks
VRRM
IF
Tj = 175 °C
1700
V
Ts = 25 °C
1771
A
Ts = 70 °C
1401
A
1800
A
-40 ... 175
°C
19.2 ... 28.8
V
IFnom
Tj
2)
junction temperature
Driver
Vs
power supply
ViH
input signal voltage (high)
Vs + 0.3
V
dv/dt
secondary to primary side
75
kV/µs
fsw
switching frequency
15
kHz
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.12
2.43
V
IGBT
VCE(sat)
IC = 1800 A
at terminal
VCE0
For further information please refer to
SKiiP®4 Technical Explanation
rCE
Footnote
Eon + Eoff
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop can be >150°C for a
maximum of 1000 cum. operation hours
Tj = 25 °C
at terminal
IC = 1800 A
Tj = 150 °C
Tj = 150 °C
2.53
2.79
V
Tj = 25 °C
1.10
1.20
V
Tj = 150 °C
1.00
1.10
V
Tj = 25 °C
0.57
0.69
mΩ
0.94
mΩ
Tj = 150 °C
0.85
VCC = 900 V
1335
VCC = 1300 V
2130
mJ
mJ
Rth(j-s)
per IGBT switch
0.0183
K/W
Rth(j-r)
per IGBT switch
0.011
K/W
S34
© by SEMIKRON
Rev. 1.0 – 22.06.2015
1
SKiiP 1814 GB17E4-3DUL
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.02
2.34
V
Tj = 150 °C
2.27
2.62
V
Tj = 25 °C
1.21
1.36
V
Tj = 150 °C
0.99
1.12
V
Tj = 25 °C
0.45
0.55
mΩ
Tj = 150 °C
0.71
0.84
mΩ
VR = 900 V
309
mJ
VR = 1300 V
498
mJ
Diode
VF = VEC
IF = 1800 A
at terminal
VF0
rF
SKiiP® 4
at terminal
Err
2-pack-integrated intelligent
Power System
SKiiP 1814 GB17E4-3DUL
IF = 1800 A
Tj = 150 °C
Rth(j-s)
per diode switch
0.0375
K/W
Rth(j-r)
per diode switch
0.024
K/W
Driver
Vs
supply voltage non stabilized
IS0
VIT+
bias current @Vs= 24V, fsw = 0, IAC = 0
k1 = 32 mA/kHz, k2 = 0.227 mA/A,
fout =50Hz, sinusoidal current
input threshold voltage (HIGH)
VIT-
input threshold voltage (LOW)
RIN
input resistance
CIN
input capacitance
tpRESET
error memory reset time
Is
Features
19.2
24
28.8
330
= 330
V
mA
+ k1* fsw
+ k2 * IAC
0,7*Vs
mA
V
0,3*Vs
V
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL recognition in progress, file no.
E242581
tpReset(OCP)
Over current reset time, FRT-function
can be activated via CAN interface
tTD
top / bottom switch interlock time
3
tjitter
jitter clock time
52
tSIS
short pulse suppression time
0.6
µs
tPOR
Power-On-Reset completed
3.5
s
Idigiout
digital output sink current
(HALT-signal)
Typical Applications*
Vit+ HALT
input threshold voltage HIGH HALT
(Low -->High)
Vit-HALT
input threshold voltage LOW HALT
(High --> Low)
td(err)
Error delay time (from detection to
HALT), (depends on kind of error)
ITRIPSC
over current trip level
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop can be >150°C for a
maximum of 1000 cum. operation hours
13
kΩ
1
nF
1300
2900
ms
µs
µs
58
16
0,6*Vs
2645
mA
V
1.8
ILL
ns
2700
0.4*Vs
V
170
µs
2755
n.a.
APEAK
APEAK
Ttrip
over temperature trip level
128
135
142
°C
TDriverTrip
over temperature PCB trip level
113
120
124
°C
VDCtrip
over voltage trip level, can be
deactivated via CAN interface,
1300
1340
1380
V
VDCtripLL
n.a.
V
S34
2
Rev. 1.0 – 22.06.2015
© by SEMIKRON
SKiiP 1814 GB17E4-3DUL
Characteristics
Symbol
Conditions
System
µs
9
kV/µs
IC = 1800 A
2
kV/µs
9
kV/µs
RCC'+EE'
IC = 1800 A
flow rate = 610 m³/h, Ta=25°C,
500m above sea level
terminals to chip, Ts = 25 °C
LCE
commutation inductance
CCHC
coupling capacitance secondary to
heat sink
Cps
coupling capacitance primary to
secondary
ICES + IRD
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
Mdc
DC terminals
6
Mac
AC terminals
13
w
SKiiP System w/o heat sink
2.48
kg
wh
heat sink
5.9
kg
dVCE/dtoff
SKiiP 1814 GB17E4-3DUL
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL recognition in progress, file no.
E242581
Unit
2.6
dVCE/dton
2-pack-integrated intelligent
Power System
max.
µs
td(off)IO
SKiiP 4
turn on
propagation delay
time
turn off
propagation delay
time
IC = 0 A
typ.
2.8
td(on)IO
®
min.
Rth(s-a)
VCC = 1300 V
IC = 1800 A
Tj = 25 °C
Tj = 25 °C
VCC = 1300 V
0.024
K/W
0.09
mΩ
6
nH
4.8
nF
0.067
nF
0.211
mA
8
Nm
15
Nm
Typical Applications*
•
•
•
•
Renewable energies
Traction
Elevators
Industrial drives
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop can be >150°C for a
maximum of 1000 cum. operation hours
S34
© by SEMIKRON
Rev. 1.0 – 22.06.2015
3
SKiiP 1814 GB17E4-3DUL
4
Rev. 1.0 – 22.06.2015
© by SEMIKRON
SKiiP 1814 GB17E4-3DUL
Fig. 1: Typical IGBT output characteristics
Fig. 2: Typical diode output characteristics
Fig. 3: Typical switching energy E = f(Ic)
Fig. 4: Typical switching energy E = f(Ic)
Fig. 5: Transient thermal impedance Zth(j-s)
Fig. 6: Transient thermal impedance Zth(j-r)
© by SEMIKRON
Rev. 1.0 – 22.06.2015
5
SKiiP 1814 GB17E4-3DUL
Fig. 7: Transient thermal impedance Zth(s-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(s-a) versus flow rate V
Fig. 10: Pressure drop Δp versus flow rate V
6
Rev. 1.0 – 22.06.2015
© by SEMIKRON
SKiiP 1814 GB17E4-3DUL
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 22.06.2015
7
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