1N5817, 1N5818, 1N5819 Datasheet

1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V, 30 V, 40 V
IFSM
25 A
VF
0.45 V, 0.55 V, 0.60 V
TJ max.
125 °C
Package
DO-204AL
Diode variations
Single
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N5817
1N5818
1N5819
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC blocking voltage
VDC
20
30
40
V
Maximum non-repetitive peak reverse voltage
VRSM
24
36
48
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 90 °C
IF(AV)
1.0
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
25
A
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 125
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
TEST CONDITIONS
1.0
3.1
TA = 25 °C
Maximum average reverse current
at rated DC blocking voltage
Typical junction capacitance
TA = 100 °C
4.0 V, 1.0 MHz
SYMBOL
1N5817
1N5818
1N5819
UNIT
VF
(1)
0.450
0.550
0.600
V
VF
(1)
0.750
0.875
0.900
V
1.0
IR (1)
CJ
mA
10
125
110
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 13-Aug-13
Document Number: 88525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
1N5817
1N5818
RJA (1)
50
RJL (1)
15
1N5819
UNIT
°C/W
Note
(1) Thermal resistance from junction to lead vertical PCB mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1N5819-E3/54
0.332
54
5500
13" diameter paper tape and reel
1N5819-E3/73
0.332
73
3000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Current (A)
1.0
0.75
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.5
0.25
Pulse Width = 300 μs
1 % Duty Cycle
1
TJ = 25 °C
0.1
0.01
0
0
20
40
80
60
100
120
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
30
100
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
TJ = 125 °C
10
25
20
15
10
5
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
1
10
100
0
20
40
60
80
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 13-Aug-13
100
Document Number: 88525
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1N5817
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance

















1000
Junction Capacitance (pF)
1
0.1
0.01
10
0.1
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1N5818, 1N5819
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 13-Aug-13
Document Number: 88525
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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