UNISONIC TECHNOLOGIES CO., LTD 5N65-CB Power MOSFET 5.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65-CB is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.3Ω @VGS = 10 V, ID = 2.5 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N65L-TA3-T 5N65G-TA3-T 5N65L-TF3-T 5N65G-TF3-T 5N65L-TF1-T 5N65G-TF1-T 5N65L-TF2-T 5N65G-TF2-T 5N65L-TM3-R 5N65G-TM3-R 5N65L-TN3-R 5N65G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 8 QW-R205-143.a 5N65-CB Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R205-143.a 5N65-CB Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Avalanche Energy Single Pulsed (Note 3) EAS 70 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.3 V/ns TO-220 100 W TO-220F/TO-220F1 Power Dissipation PD 36 W TO-220F2 TO-251/TO-252 54 W Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=16.8mH, IAS=2.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS UNIT 62.5 °C/W 160 1.25 °C/W °C/W 3.47 °C/W 2.3 °C/W 3 of 8 QW-R205-143.a 5N65-CB Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS =0V, ID = 250μA VDS =650V, VGS = 0V Forward VGS =30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS =-30V, VDS = 0V ID =250μA, Referenced to Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V, Gate-Source Charge QGS IG=100μA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 5A Reverse Recovery Time trr VGS = 0 V, IS = 5 A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge Qrr Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 1 100 -100 0.6 2.0 V μA nA V/°C 4.0 2.3 V Ω 265 60 60 pF pF pF 53 4.2 5.2 42 24 152 30 nC nC nC ns ns ns ns 370 1.64 5 A 20 A 1.4 V ns μC 4 of 8 QW-R205-143.a 5N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R205-143.a 5N65-CB UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 6 of 8 QW-R205-143.a 5N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms VGS 12V Same Type as D.U.T. 50kΩ 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 7 of 8 QW-R205-143.a 5N65-CB Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R205-143.a