Data Sheet

PBHV9115Z
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 02 — 9 January 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115Z.
1.2 Features
n
n
n
n
n
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1.3 Applications
n
n
n
n
n
n
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−150
V
IC
collector current
-
-
−1
A
hFE
DC current gain
100
220
-
VCE = −10 V;
IC = −50 mA
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
collector
3
emitter
4
collector
Simplified outline
Graphic symbol
4
2, 4
1
1
2
3
3
sym028
3. Ordering information
Table 3.
Ordering information
Type number
PBHV9115Z
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBHV9115Z
V9115Z
PBHV9115Z_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
2 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−200
V
VCEO
collector-emitter voltage
open base
-
−150
V
VEBO
emitter-base voltage
open collector
-
−6
V
IC
collector current
-
−1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−2
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
−400
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.7
W
[2]
-
1.4
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aab155
1600
(1)
Ptot
(mW)
1200
800
(2)
400
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBHV9115Z_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
3 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
thermal resistance from
junction to solder point
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
175
K/W
[2]
-
-
89
K/W
-
-
20
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aab156
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab157
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9115Z_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
4 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −120 V; IE = 0 A
-
-
−100
nA
VCB = −120 V; IE = 0 A;
Tj = 150 °C
-
-
−10
µA
ICES
collector-emitter
cut-off current
VCE = −120 V; VBE = 0 A
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB = −4 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −10 V
100
220
-
IC = −50 mA
IC = −100 mA
100
220
-
10
30
-
IC = −100 mA; IB = −10 mA
-
−60
−120
mV
IC = −100 mA; IB = −20 mA
-
−50
−100
mV
IC = −500 mA;
IB = −100 mA
-
−150
−300
mV
-
−1.05 −1.2
V
IC = −1 A
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter
saturation voltage
IC = −1 A; IB = −200 mA
fT
transition frequency
VCE = −10 V; IE = −10 mA;
f = 100 MHz
-
115
-
MHz
Cc
collector capacitance
VCB = −20 V; IE = ie = 0 A;
f = 1 MHz
-
10
-
pF
Ce
emitter capacitance
VEB = −0.5 V; IC = ic = 0 A;
f = 1 MHz
-
150
-
pF
td
delay time
-
8
-
ns
tr
rise time
VCC = −6 V; IC = −0.5 A;
IBon = −0.1 A; IBoff = 0.1 A
-
282
-
ns
ton
turn-on time
-
290
-
ns
ts
storage time
-
430
-
ns
tf
fall time
-
300
-
ns
toff
turn-off time
-
730
-
ns
[1]
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBHV9115Z_2
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
5 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab166
400
006aab167
−2.0
IB (mA) = −400
IC
(A)
hFE
(1)
−1.6
300
−280
−240
−200
−160
−1.2
(2)
−360
−320
−120
−80
200
−40
−0.8
(3)
100
−0.4
0
−10−1
−1
−10
−102
0
−103
−104
IC (mA)
0
VCE = −10 V
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4.
DC current gain as a function of collector
current; typical values
006aab168
−1.2
VBE
(V)
Fig 5.
Collector current as a function of
collector-emitter voltage; typical values
006aab169
−1.3
VBEsat
(V)
(1)
−0.8
−0.9
(1)
(2)
(2)
(3)
(3)
−0.4
−0.5
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.1
−10−1
VCE = −10 V
−1
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 7.
−103
−104
IC (mA)
Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9115Z_2
Product data sheet
−102
IC/IB = 5
(1) Tamb = −55 °C
Fig 6.
−10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
6 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab170
−10
VCEsat
(V)
VCEsat
(V)
−1
−1
−10−1
006aab171
−10
−10−1
(1)
(2)
(3)
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab172
103
Fig 9.
102
102
10
10
(1)
(2)
(3)
1
−1
−10
−102
006aab173
103
RCEsat
(Ω)
(1) (2) (3)
1
−103
−104
IC (mA)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 5
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9115Z_2
Product data sheet
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
10−1
−10−1
−102
Tamb = 25 °C
IC/IB = 5
Fig 8.
−10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
7 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
8. Test information
VBB
RB
oscilloscope
VCC
RC
Vo
(probe)
(probe)
450 Ω
oscilloscope
450 Ω
R2
VI
DUT
R1
mgd624
Fig 12. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
4.6
3
0.8
0.6
Dimensions in mm
0.32
0.22
04-11-10
Fig 13. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBHV9115Z
[1]
Package
SOT223
Description
8 mm pitch, 12 mm tape and reel
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 14.
PBHV9115Z_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
8 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 14. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig 15. Wave soldering footprint SOT223 (SC-73)
PBHV9115Z_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
9 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9115Z_2
20090109
Product data sheet
-
PBHV9115Z_1
Modifications:
PBHV9115Z_1
•
•
•
Table 5: IBM value changed from −100 mA to −400 mA
Figure 5: amended
Section 13 “Legal information”: updated
20080214
Product data sheet
PBHV9115Z_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
10 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBHV9115Z_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 9 January 2009
11 of 12
PBHV9115Z
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 January 2009
Document identifier: PBHV9115Z_2
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