Data Sheet

2PB1424
20 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 02 — 15 January 2007
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
1.2 Features
n
n
n
n
n
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
n
n
n
n
n
n
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−20
V
IC
collector current
-
-
−3
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
-
−5
A
VCEsat
collector-emitter
saturation voltage
IC = −2 A;
IB = −0.1 A
-
−0.2
−0.5
V
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[1]
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter
2
collector
3
base
Simplified outline
Symbol
2
3
3
2
1
1
006aaa231
3. Ordering information
Table 3.
Ordering information
Type number
2PB1424
Package
Name
Description
Version
SC-62
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
4. Marking
Table 4.
Marking codes
Type number
Marking code
2PB1424
M1
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−20
V
VCEO
collector-emitter voltage
open base
-
−20
V
VEBO
emitter-base voltage
open collector
-
−6
V
IC
collector current
-
−3
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−5
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.5
W
[2]
-
2
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
2 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
006aaa943
2.4
(1)
Ptot
(W)
1.6
0.8
(2)
0
−75
−25
0
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Typ
Max
Unit
-
-
250
K/W
[2]
-
-
62
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
2PB1424_2
Product data sheet
Min
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
3 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
006aaa944
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.75
0.5
0.33
0.1
0.2
0.05
10
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa945
102
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
10
0.2
0.33
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
4 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −20 V; IE = 0 A
-
-
−0.1
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −0.1 A
180
-
390
VCEsat
collector-emitter
saturation voltage
IC = −2 A; IB = −0.1 A
-
−0.2
−0.5
V
fT
transition frequency
VCE = −2 V; IE = 0.5 A;
f = 100 MHz
-
125
-
MHz
Cib
common-base input
capacitance
VEB = −5 V; IE = ie = 0 A;
f = 1 MHz
-
130
-
pF
Cob
common-base output
capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
37
-
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2PB1424_2
Product data sheet
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
5 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
006aaa946
−104
006aaa947
−2.0
IB (mA) = −20
−18
−16
IC
(A)
IC
(mA)
−1.6
−103
−14
−12
−10
−8
−1.2
(1)
−102
(2)
−6
(3)
−4
−0.8
−10
−2
−0.4
−1
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
−1.2 −1.4
VBE (V)
0
VCE = −2 V
−0.2
−0.4
−0.6
−0.8
−1.0
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 4. Collector current as a function of base-emitter
voltage; typical values
006aaa948
−5
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
006aaa949
103
IB (mA) = −50
IC
(A)
−45
−4
−40
−30
−3
(1)
hFE
(2)
−35
(3)
102
−25
−20
−15
−2
−10
10
−5
−1
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
1
−1
−10
−102
−104
−103
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
Fig 7. DC current gain as a function of collector
current; typical values
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
6 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
006aaa950
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(3)
−10−2
−10−3
006aaa951
−1
(1)
(2)
(3)
−10−2
−1
−10
−102
−104
−103
−10−3
−1
−10
−102
IC (mA)
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa952
−1
VCEsat
(V)
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa953
103
fT
(MHz)
(1)
(2)
(3)
−10−1
102
−10−2
−10−3
−104
−103
IC (mA)
10
−1
−10
−102
−104
−103
1
1
10
IC (mA)
102
103
IE (mA)
Tamb = 25 °C; VCE = −2 V
IC/IB = 50
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Transition frequency as a function of emitter
current; typical values
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
7 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
006aaa954
103
Cib
(pF)
006aaa955
103
Cob
(pF)
102
10
−10−1
102
−1
−10
−102
10
−10−1
VEB (V)
−10
−102
VCB (V)
Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A
Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A
Fig 12. Common-base input capacitance as a function
of emitter-base voltage; typical values
Fig 13. Common-base output capacitance as a
function of collector-base voltage; typical
values
2PB1424_2
Product data sheet
−1
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
8 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
8. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
2
1.2
0.8
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig 14. Package outline SOT89 (SC-62/TO-243)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
2PB1424
[1]
Package
SOT89
Description
8 mm pitch, 12 mm tape and reel
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 13.
2PB1424_2
Product data sheet
Packing quantity
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
9 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
10. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
0.85 0.20
solder resist
occupied area
1.70
1.20
solder paste
4.60
4.85
0.50
1.20
Dimensions in mm
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.60
2.40
3.50
2
3
1
solder lands
7.60
0.50
1.20
solder resist
occupied area
3.00
Dimensions in mm
preferred transport direction during soldering
1.50
0.70
5.30
msa423
Not recommended for wave soldering
Fig 16. Wave soldering footprint SOT89 (SC-62/TO-243)
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
10 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2PB1424_2
20070115
Product data sheet
-
2PB1424_1
Modifications:
2PB1424_1
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP
Semiconductors.
•
•
•
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
•
•
•
•
•
•
•
•
•
•
Figure 2: tp pulse time redefined to pulse duration
Table 1 “Quick reference data”: IC collector current added
Table 1 “Quick reference data”: ICM peak collector current maximum value adapted
Table 1 “Quick reference data”: VCEsat collector-emitter saturation voltage added
Table 5 “Limiting values”: VCBO collector-base voltage maximum value adapted
Table 5 “Limiting values”: VEBO emitter-base voltage maximum value adapted
Table 5 “Limiting values”: IC collector current maximum value adapted
Table 5 “Limiting values”: ICM peak collector current maximum value adapted
Table 5 “Limiting values”: Ptot total power dissipation for ceramic PCB condition added
Figure 1 “Power derating curves”: adapted
Table 6 “Thermal characteristics”: adapted
Table 6 “Thermal characteristics”: Rth(j-a) thermal resistance from junction to ambient for ceramic PCB
condition added
Figure 3: added
Table 7 “Characteristics”: ICBO collector-base cut-off current conditions adapted
Table 7 “Characteristics”: VCEsat collector-emitter saturation voltage typical value added
Table 7 “Characteristics”: fT transition frequency conditions and typical value adapted
Table 7 “Characteristics”: Cib common-base input capacitance added
Table 7 “Characteristics”: Cob common-base output capacitance added
Figure 4, 6, 10, 11, 12, 13 and 16: added
Figure 5, 7, 8 and 9: adapted
Section 12 “Legal information”: updated
20050502
Product data sheet
2PB1424_2
Product data sheet
-
-
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
11 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
2PB1424_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 15 January 2007
12 of 13
2PB1424
NXP Semiconductors
20 V, 3 A PNP low VCEsat (BISS) transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 January 2007
Document identifier: 2PB1424_2
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