SS32, SS33, SS34, SS35, SS36 Datasheet

SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
IFSM
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
TJ max.
150 °C
Package
DO-214AB (SMC)
Diode variations
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS32
SS33
SS34
SS35
SS36
S2
S3
S4
S5
S6
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
Maximum average forward rectified current at TL (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
dV/dt
10 000
V/μs
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
V
Revision: 04-Aug-15
Document Number: 88751
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage (1)
3.0 A
SYMBOL
SS33
VF
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage (1)
SS32
SS35
0.5
SS36
UNIT
0.75
V
0.5
IR
TA = 100 °C
SS34
20
mA
10
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
SS32
SS33
SS34
RJA
55
RJL
17
SS35
SS36
UNIT
°C/W
Note
PCB. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.235
57T
850
7" diameter plastic tape and reel
SS34-E3/9AT
0.235
9AT
3500
13" diameter plastic tape and reel
SS34HE3_A/H (1)
0.235
H
850
7" diameter plastic tape and reel
SS34HE3_A/I (1)
0.235
I
3500
13" diameter plastic tape and reel
SS34-E3/57T
Note
AEC-Q101 qualified
(1)
3.5
100
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
PCB Mounted on 0.55" x 0.55"
(14 mm x 14 mm) Copper Pad Area
0.5
SS32 thru SS36
0
0
25
50
75
100
125
150
At Rated TL
8.3 ms Single Half Sine-Wave
80
60
40
20
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 04-Aug-15
Document Number: 88751
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
10
TJ = 150 °C
Pulse Width = 300 ˩s
1% Duty Cycle
1
TJ = 25 °C
0.1
SS32 thru SS34
SS35 and SS36
0.01
0
Instantaneous Reverse Current (mA)
Junction Capacitance (pF)
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS32 thru SS34
SS35 and SS36
10
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
SS32 thru SS34
SS35 and SS36
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
10
1
0.1
0.01
100
0.1
Percent of Rated Peak Reverse Voltage (%)
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Current Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 04-Aug-15
Document Number: 88751
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000